Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy
Abstract
Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 1015 cm–3, 8.4 × 1016 cm–3, and 8.4 × 1017 cm–3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ~8 × 1015 cm–3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm–3 and 8.4 × 1016 cm–3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.
- Authors:
-
- Texas State Univ., San Marcos, TX (United States)
- Publication Date:
- Research Org.:
- Texas State Univ., San Marcos, TX (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- OSTI Identifier:
- 1580431
- Grant/Contract Number:
- EE0007541; AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Electronic Materials
- Additional Journal Information:
- Journal Volume: 46; Journal Issue: 9; Journal ID: ISSN 0361-5235
- Publisher:
- Springer
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; CdTe; heterostructures; photoluminescence; lifetime
Citation Formats
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., and Holtz, M. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. United States: N. p., 2017.
Web. doi:10.1007/s11664-017-5646-y.
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., & Holtz, M. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. United States. https://doi.org/10.1007/s11664-017-5646-y
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., and Holtz, M. Wed .
"Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy". United States. https://doi.org/10.1007/s11664-017-5646-y. https://www.osti.gov/servlets/purl/1580431.
@article{osti_1580431,
title = {Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy},
author = {Sohal, Sandeep and Edirisooriya, M. and Ogedengbe, O. S. and Petersen, J. E. and Swartz, C. H. and LeBlanc, E. G. and Myers, T. H. and Li, J. V. and Holtz, M.},
abstractNote = {Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 1015 cm–3, 8.4 × 1016 cm–3, and 8.4 × 1017 cm–3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ~8 × 1015 cm–3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm–3 and 8.4 × 1016 cm–3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.},
doi = {10.1007/s11664-017-5646-y},
journal = {Journal of Electronic Materials},
number = 9,
volume = 46,
place = {United States},
year = {Wed Jun 21 00:00:00 EDT 2017},
month = {Wed Jun 21 00:00:00 EDT 2017}
}
Web of Science
Works referenced in this record:
Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe
journal, January 2015
- Kuciauskas, Darius; Kanevce, Ana; Dippo, Pat
- IEEE Journal of Photovoltaics, Vol. 5, Issue 1
Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation
journal, October 2013
- Kuciauskas, Darius; Kanevce, Ana; Burst, James M.
- IEEE Journal of Photovoltaics, Vol. 3, Issue 4
Radiative and interfacial recombination in CdTe heterostructures
journal, December 2014
- Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G.
- Applied Physics Letters, Vol. 105, Issue 22
Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
journal, December 2014
- Zhao, Xin-Hao; DiNezza, Michael J.; Liu, Shi
- Applied Physics Letters, Vol. 105, Issue 25
Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17%
journal, May 2016
- Zhao, Yuan; Boccard, Mathieu; Liu, Shi
- Nature Energy, Vol. 1, Issue 6
Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy
journal, August 2016
- Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H.
- Applied Physics Letters, Vol. 109, Issue 9
Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
journal, July 1986
- Yablonovitch, E.; Allara, D. L.; Chang, C. C.
- Physical Review Letters, Vol. 57, Issue 2, p. 249-252
Nearly ideal electronic properties of sulfide coated GaAs surfaces
journal, August 1987
- Yablonovitch, E.; Sandroff, C. J.; Bhat, R.
- Applied Physics Letters, Vol. 51, Issue 6
Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers
journal, July 1991
- Ahrenkiel, R. K.; Keyes, B. M.; Dunlavy, D. J.
- Journal of Applied Physics, Vol. 70, Issue 1
Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy
journal, November 2016
- Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S.
- Journal of Physics D: Applied Physics, Vol. 49, Issue 50
Optical properties of CdTe: Experiment and modeling
journal, September 1993
- Adachi, Sadao; Kimura, Toshifumi; Suzuki, Norihiro
- Journal of Applied Physics, Vol. 74, Issue 5
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
journal, March 2013
- Steiner, M. A.; Geisz, J. F.; García, I.
- Journal of Applied Physics, Vol. 113, Issue 12
Statistics of the Recombinations of Holes and Electrons
journal, September 1952
- Shockley, W.; Read, W. T.
- Physical Review, Vol. 87, Issue 5
Theoretical analysis of non-radiative multiphonon recombination activity of intrinsic defects in CdTe
journal, February 2016
- Krasikov, D. N.; Scherbinin, A. V.; Knizhnik, A. A.
- Journal of Applied Physics, Vol. 119, Issue 8
Shockley-Read-Hall lifetimes in CdTe
journal, July 2014
- Buurma, C.; Krishnamurthy, S.; Sivananthan, S.
- Journal of Applied Physics, Vol. 116, Issue 1
Works referencing / citing this record:
Investigations of the structural, optical properties and electronic structure of CdTe 1− x Se x films fabricated by RF magnetron sputtering
journal, March 2019
- Li, Chunxiu; Wang, Ailing; Wu, Lili
- Materials Research Express, Vol. 6, Issue 6