Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them

Rice, Anthony D.; Park, Kwangwook; Hughes, Eamonn T.; Mukherjee, Kunal; Alberi, Kirstin M.

doi:10.1103/PhysRevMaterials.3.121201

Title: Defects in $C d_{3} A s_{2}$ epilayers via molecular beam epitaxy and strategies for reducing them

Abstract

Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal Cd₃As₂, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched Zn_xCd_1-xTe buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of Cd₃As₂. In conclusion, a combination of defect suppression approaches produces Cd₃As₂ epilayers with electron mobilities upwards of 15000 cm²/Vs at room temperature.

Authors:

^[1];

^[2];

^[3]; Mukherjee, Kunal ^[3]; Alberi, Kirstin M. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States); Jeonbuk National Univ., Jeonju (Republic of Korea)
Univ. of California, Santa Barbara, CA (United States)

Publication Date:: Mon Dec 09 00:00:00 EST 2019

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program

OSTI Identifier:: 1580029

Report Number(s):: NREL/JA-5K00-74891
Journal ID: ISSN 2475-9953; PRMHAR; TRN: US2102246

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 3; Journal Issue: 12; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; defects; molecular beam epitaxy; scanning electron microscopy; x-ray diffraction; II-VI semiconductors; multilayer thin films

Citation Formats


                    Rice, Anthony D., Park, Kwangwook, Hughes, Eamonn T., Mukherjee, Kunal, and Alberi, Kirstin M. Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them.  United States: N. p., 2019. 
Web.  doi:10.1103/PhysRevMaterials.3.121201.

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                    Rice, Anthony D., Park, Kwangwook, Hughes, Eamonn T., Mukherjee, Kunal, & Alberi, Kirstin M. Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them.  United States.  https://doi.org/10.1103/PhysRevMaterials.3.121201

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                    Rice, Anthony D., Park, Kwangwook, Hughes, Eamonn T., Mukherjee, Kunal, and Alberi, Kirstin M. Mon .  
"Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them".  United States.  https://doi.org/10.1103/PhysRevMaterials.3.121201.  https://www.osti.gov/servlets/purl/1580029.

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@article{osti_1580029,

  title        = {Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them},

  author       = {Rice, Anthony D. and Park, Kwangwook and Hughes, Eamonn T. and Mukherjee, Kunal and Alberi, Kirstin M.},

  abstractNote = {Molecular beam epitaxy offers an exciting avenue for investigating the behavior of the topological semimetal Cd3As2, by providing routes for doping, alloying, strain engineering, and heterostructure formation. To date, however, minimal exploration has been devoted to the impact of defects that are incorporated into epilayers due to constraints imposed by the substrate and narrow growth window. Here, we use a combination of lattice-matched ZnxCd1-xTe buffer layers, miscut substrates, and broadband illumination to study how dislocations, twins, and point defects influence the electron mobility of Cd3As2. In conclusion, a combination of defect suppression approaches produces Cd3As2 epilayers with electron mobilities upwards of 15000 cm2/Vs at room temperature.},

  doi          = {10.1103/PhysRevMaterials.3.121201},

  journal      = {Physical Review Materials},

  number       = 12,

  volume       = 3,

  place        = {United States},

  year         = {Mon Dec 09 00:00:00 EST 2019},

  month        = {Mon Dec 09 00:00:00 EST 2019}

}

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Title: Defects in C d 3 A s 2 epilayers via molecular beam epitaxy and strategies for reducing them

Abstract

Citation Formats

Topological semimetals journal, October 2016

Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111) B substrates journal, April 1991

Tailoring Heterovalent Interface Formation with Light journal, August 2017

Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd 3 As 2 films journal, July 2019

Effects of incident UV light on the surface morphology of MBE grown GaAs journal, March 2015

Suppression of compensating native defect formation during semiconductor processing via excess carriers journal, June 2016

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes journal, November 2017

Transport evidence for Fermi-arc-mediated chirality transfer in the Dirac semimetal Cd3As2 journal, July 2016

Molecular beam epitaxy of Cd 3 As 2 on a III-V substrate journal, December 2016

Three-dimensional Dirac semimetal and quantum transport in Cd 3 As 2 journal, September 2013

Quantum Transport Evidence for the Three-Dimensional Dirac Semimetal Phase in Cd 3 As 2 journal, December 2014

SOLID-VAPOR EQUILIBRIA FOR THE COMPOUNDS Cd 3 As 2 AND CdAs 2 journal, February 1960

Classification of stable three-dimensional Dirac semimetals with nontrivial topology journal, September 2014

The origins of twinning in cdTe journal, May 1983

Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd 3 As 2 journal, February 2018

Observation of a three-dimensional topological Dirac semimetal phase in high-mobility Cd3As2 journal, May 2014

Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs journal, November 1989

Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2 journal, November 2014

An experimentally convenient configuration for electron channeling contrast imaging journal, May 1999

Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3 journal, February 2018

The Crystal and Electronic Structures of Cd 3 As 2 , the Three-Dimensional Electronic Analogue of Graphene journal, March 2014

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications journal, May 2017

Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$ text, January 2014

Topological Semimetals text, January 2016

Title: Defects in $C d_{3} A s_{2}$ epilayers via molecular beam epitaxy and strategies for reducing them

Topological semimetals
journal, October 2016

Growth control of GaAs epilayers with specular surface free of pyramids and twins on nonmisoriented (111) B substrates
journal, April 1991

Tailoring Heterovalent Interface Formation with Light
journal, August 2017

Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd ₃ As ₂ films
journal, July 2019

Effects of incident UV light on the surface morphology of MBE grown GaAs
journal, March 2015

Suppression of compensating native defect formation during semiconductor processing via excess carriers
journal, June 2016

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes
journal, November 2017

Transport evidence for Fermi-arc-mediated chirality transfer in the Dirac semimetal Cd3As2
journal, July 2016

Molecular beam epitaxy of Cd ₃ As ₂ on a III-V substrate
journal, December 2016

Three-dimensional Dirac semimetal and quantum transport in Cd $_{3}$ As $_{2}$
journal, September 2013

Quantum Transport Evidence for the Three-Dimensional Dirac Semimetal Phase in ${Cd}_{3} {As}_{2}$
journal, December 2014

SOLID-VAPOR EQUILIBRIA FOR THE COMPOUNDS Cd ₃ As ₂ AND CdAs ₂
journal, February 1960

Classification of stable three-dimensional Dirac semimetals with nontrivial topology
journal, September 2014

The origins of twinning in cdTe
journal, May 1983

Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd ₃ As ₂
journal, February 2018

Observation of a three-dimensional topological Dirac semimetal phase in high-mobility Cd3As2
journal, May 2014

Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs
journal, November 1989

Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2
journal, November 2014

An experimentally convenient configuration for electron channeling contrast imaging
journal, May 1999

Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3
journal, February 2018

The Crystal and Electronic Structures of Cd ₃ As ₂ , the Three-Dimensional Electronic Analogue of Graphene
journal, March 2014

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications
journal, May 2017

Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$
text, January 2014

Topological Semimetals
text, January 2016