Strain-stress study of AlxGa1–xN/AlN heterostructures on c-plane sapphire and related optical properties
Abstract
This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain on the optical phonon energies of the epitaxial layers is also discussed.
- Authors:
-
[1];
[3];
- Purdue Univ., West Lafayette, IN (United States). Lyles School of Civil Engineering, Birck Nanotechnology Center; Argonne National Lab. (ANL), Lemont, IL (United States). Applied Materials Div.
- Missouri Univ. of Science and Technology, Rolla, MO (United States). Electrical and Computer Engineering
- Purdue Univ., West Lafayette, IN (United States). Lyles School of Civil Engineering, Birck Nanotechnology Center
- Univ. of Science and Technology of China, Anhui (China). National Synchrotron Radiation Lab.; Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source
- Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source
- Missouri Univ. of Science and Technology, Rolla, MO (United States). Electrical and Computer Engineering; Kennesaw State Univ., Marietta, GA (United States). Southern Polytechnic College of Engineering and Engineering Technology
- Purdue Univ., West Lafayette, IN (United States). Lyles School of Civil Engineering, Birck Nanotechnology Center and School of Materials Engineering
- Publication Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1574136
- Alternate Identifier(s):
- OSTI ID: 1580893
- Grant/Contract Number:
- AC02-06CH11357; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Feng, Yining, Saravade, Vishal, Chung, Ting -Fung, Dong, Yongqi, Zhou, Hua, Kucukgok, Bahadir, Ferguson, Ian T., and Lu, Na. Strain-stress study of AlxGa1–xN/AlN heterostructures on c-plane sapphire and related optical properties. United States: N. p., 2019.
Web. doi:10.1038/s41598-019-46628-4.
Feng, Yining, Saravade, Vishal, Chung, Ting -Fung, Dong, Yongqi, Zhou, Hua, Kucukgok, Bahadir, Ferguson, Ian T., & Lu, Na. Strain-stress study of AlxGa1–xN/AlN heterostructures on c-plane sapphire and related optical properties. United States. https://doi.org/10.1038/s41598-019-46628-4
Feng, Yining, Saravade, Vishal, Chung, Ting -Fung, Dong, Yongqi, Zhou, Hua, Kucukgok, Bahadir, Ferguson, Ian T., and Lu, Na. Mon .
"Strain-stress study of AlxGa1–xN/AlN heterostructures on c-plane sapphire and related optical properties". United States. https://doi.org/10.1038/s41598-019-46628-4. https://www.osti.gov/servlets/purl/1574136.
@article{osti_1574136,
title = {Strain-stress study of AlxGa1–xN/AlN heterostructures on c-plane sapphire and related optical properties},
author = {Feng, Yining and Saravade, Vishal and Chung, Ting -Fung and Dong, Yongqi and Zhou, Hua and Kucukgok, Bahadir and Ferguson, Ian T. and Lu, Na},
abstractNote = {This work presents a systematic study of stress and strain of AlxGa1-xN/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of the AlxGa1-xN epitaxial layers exhibits compressive strain, while the a-plane exhibits tensile strain. The biaxial stress and strain are found to increase with increasing Al composition, although the lattice mismatch between the AlxGa1-xN and the buffer layer AlN gets smaller. A reduction in the lateral coherence lengths and an increase in the edge and screw dislocations are seen as the AlxGa1-xN composition is varied from GaN to AlN, exhibiting a clear dependence of the crystal properties of AlxGa1-xN on the Al content. The bandgap of the epitaxial layers is slightly lower than predicted value due to a larger tensile strain effect on the a-axis compared to the compressive strain on the c-axis. Raman characteristics of the AlxGa1-xN samples exhibit a shift in the phonon peaks with the Al composition. The effect of strain on the optical phonon energies of the epitaxial layers is also discussed.},
doi = {10.1038/s41598-019-46628-4},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United States},
year = {Mon Jul 15 00:00:00 EDT 2019},
month = {Mon Jul 15 00:00:00 EDT 2019}
}
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Works referenced in this record:
III-nitrides for energy production: photovoltaic and thermoelectric applications
journal, June 2013
- Lu, Na; Ferguson, Ian
- Semiconductor Science and Technology, Vol. 28, Issue 7
Properties of GaN and related compounds studied by means of Raman scattering
journal, September 2002
- Harima, Hiroshi
- Journal of Physics: Condensed Matter, Vol. 14, Issue 38
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
journal, September 1997
- Angerer, H.; Brunner, D.; Freudenberg, F.
- Applied Physics Letters, Vol. 71, Issue 11
MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications
journal, January 2019
- Wośko, Mateusz; Szymański, Tomasz; Paszkiewicz, Bogdan
- Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 4
Phonons in ternary group-III nitride alloys
journal, March 2000
- Grille, H.; Schnittler, Ch.; Bechstedt, F.
- Physical Review B, Vol. 61, Issue 9
Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy
journal, April 2016
- Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji
- Japanese Journal of Applied Physics, Vol. 55, Issue 5S
Growth of high quality n-Al 0.5 Ga 0.5 N thick films by MOCVD
journal, August 2016
- He, Chenguang; Qin, Zhixin; Xu, Fujun
- Materials Letters, Vol. 176
Design requirements for high-sensitivity UV solar blind imaging detectors based on AlGaN/GaN photodetector arrays: a review
conference, November 2001
- Litton, Cole W.; Schreiber, P. J.; Smith, Gary A.
- International Symposium on Optical Science and Technology, SPIE Proceedings
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
journal, October 2002
- Biyikli, Necmi; Aytur, Orhan; Kimukin, Ibrahim
- Applied Physics Letters, Vol. 81, Issue 17
Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations
journal, November 2016
- Lee, H. -P.; Perozek, J.; Rosario, L. D.
- Scientific Reports, Vol. 6, Issue 1
Advantages of blue InGaN light-emitting diodes with AlGaN barriers
journal, January 2010
- Chang, Jih-Yuan; Tsai, Miao-Chan; Kuo, Yen-Kuang
- Optics Letters, Vol. 35, Issue 9
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
journal, May 2002
- Pereira, S.; Correia, M. R.; Pereira, E.
- Applied Physics Letters, Vol. 80, Issue 21
Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry
journal, November 2017
- Liu, Yao; Li, Qing Xuan; Wan, Ling Yu
- Applied Surface Science, Vol. 421
Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method
journal, August 1997
- Tanaka, Motoyuki; Nakahata, Seiji; Sogabe, Kouichi
- Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 8B
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
journal, April 2016
- He, Chenguang; Qin, Zhixin; Xu, Fujun
- Scientific Reports, Vol. 6, Issue 1
Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD
journal, March 2019
- Liu, Ningyang; Wang, Qiao; Li, Bo
- The Journal of Physical Chemistry C, Vol. 123, Issue 14
Structural and optical analyses of Al x Ga 1− x N thin films grown by metal organic chemical vapor deposition
journal, January 2015
- Kucukgok, Bahadir; Lu, Na; Ferguson, Ian T.
- Japanese Journal of Applied Physics, Vol. 54, Issue 2S
Strain analysis of InGaN/GaN multi quantum well LED structures
journal, June 2012
- Şebnem Çetin, S.; Kemal Öztürk, M.; Özçelik, S.
- Crystal Research and Technology
Vibrational Spectroscopy of Aluminum Nitride
journal, May 1993
- McNeil, Laurie E.; Grimsditch, Marcos; French, Roger H.
- Journal of the American Ceramic Society, Vol. 76, Issue 5
AlGaN photonics: recent advances in materials and ultraviolet devices
journal, January 2018
- Li, Dabing; Jiang, Ke; Sun, Xiaojuan
- Advances in Optics and Photonics, Vol. 10, Issue 1
Brillouin scattering study of bulk GaN
journal, June 1999
- Yamaguchi, M.; Yagi, T.; Sota, T.
- Journal of Applied Physics, Vol. 85, Issue 12
Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy
journal, April 2016
- He, Chenguang; Qin, Zhixin; Xu, Fujun
- Applied Physics Express, Vol. 9, Issue 5
Structural and optical properties of Al x Ga 1−x N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition
journal, January 2017
- Xu, Qingjun; Liu, Bin; Zhang, Shiying
- Superlattices and Microstructures, Vol. 101
Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
journal, November 2018
- Stanchu, Hryhorii V.; Kuchuk, Andrian V.; Mazur, Yuriy I.
- Crystal Growth & Design, Vol. 19, Issue 1
Stress evolution during metalorganic chemical vapor deposition of GaN
journal, January 1999
- Hearne, S.; Chason, E.; Han, J.
- Applied Physics Letters, Vol. 74, Issue 3
Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
journal, January 2016
- Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo
- Scientific Reports, Vol. 6, Issue 1
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
journal, November 1999
- Keller, S.; Parish, G.; Fini, P. T.
- Journal of Applied Physics, Vol. 86, Issue 10
Validity of Vegard’s rule for Al 1− x In x N (0.08 < x < 0.28) thin films grown on GaN templates
journal, April 2017
- Magalhães, S.; Franco, N.; Watson, I. M.
- Journal of Physics D: Applied Physics, Vol. 50, Issue 20
Energy band bowing parameter in AlxGa1−xN alloys
journal, October 2002
- Yun, Feng; Reshchikov, Michael A.; He, Lei
- Journal of Applied Physics, Vol. 92, Issue 8
Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate
journal, January 2013
- Liu, H. F.; Dolmanan, S. B.; Zhang, L.
- Journal of Applied Physics, Vol. 113, Issue 2
High-resolution x-ray diffraction strain-stress analysis of GaN/sapphire heterostructures
journal, May 2001
- Harutyunyan, V. S.; Aivazyan, A. P.; Weber, E. R.
- Journal of Physics D: Applied Physics, Vol. 34, Issue 10A
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
journal, July 2000
- Ibbetson, J. P.; Fini, P. T.; Ness, K. D.
- Applied Physics Letters, Vol. 77, Issue 2
Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction
journal, January 1999
- Wu, M. F.; Yao, Shude; Vantomme, A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 4
Metal–Semiconductor–Metal AlN Mid-Ultraviolet Photodetectors Grown by Magnetron Reactive Sputtering Deposition
journal, June 2004
- Chen, Lung-Chien; Fu, Ming-Song; Huang, In-Lin
- Japanese Journal of Applied Physics, Vol. 43, Issue 6A
AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications
journal, January 2018
- Jung, Sunwoo; Baik, Kwang Hyeon; Ren, Fan
- ECS Journal of Solid State Science and Technology, Vol. 7, Issue 7
X-ray diffraction of III-nitrides
journal, February 2009
- Moram, M. A.; Vickers, M. E.
- Reports on Progress in Physics, Vol. 72, Issue 3
A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
journal, August 2013
- Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo
- Sensors, Vol. 13, Issue 8
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
journal, July 1998
- Perry, William G.; Bremser, M. B.; Zheleva, T.
- Thin Solid Films, Vol. 324, Issue 1-2
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
journal, October 2013
- Choi, Sukwon; Heller, Eric; Dorsey, Donald
- Journal of Applied Physics, Vol. 114, Issue 16
Advantages of Blue LEDs With Graded-Composition AlGaN/GaN Superlattice EBL
journal, November 2013
- Lin, Bing-Cheng; Chen, Kuo-Ju; Han, Hau-Vei
- IEEE Photonics Technology Letters, Vol. 25, Issue 21
High-resolution X-ray diffraction analysis of Al x Ga 1−x N/In x Ga 1−x N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
journal, May 2014
- Jana, Sanjay Kumar; Mukhopadhyay, Partha; Ghosh, Saptarsi
- Journal of Applied Physics, Vol. 115, Issue 17
Nanoscale Electrostructural Characterization of Compositionally Graded Al x Ga 1– x N Heterostructures on GaN/Sapphire (0001) Substrate
journal, October 2015
- Kuchuk, Andrian V.; Lytvyn, Petro M.; Li, Chen
- ACS Applied Materials & Interfaces, Vol. 7, Issue 41
Elastic constants of gallium nitride
journal, March 1996
- Polian, A.; Grimsditch, M.; Grzegory, I.
- Journal of Applied Physics, Vol. 79, Issue 6
Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications
journal, November 2010
- Hurwitz, Elisa N.; Asghar, Muhammad; Melton, Andrew
- Journal of Electronic Materials, Vol. 40, Issue 5
200nm deep ultraviolet photodetectors based on AlN
journal, November 2006
- Li, J.; Fan, Z. Y.; Dahal, R.
- Applied Physics Letters, Vol. 89, Issue 21
Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition
journal, February 2010
- Miao, Z. L.; Yu, T. J.; Xu, F. J.
- Journal of Applied Physics, Vol. 107, Issue 4
p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes
journal, December 2012
- Liu, Zhiqiang; Ma, Jun; Yi, Xiaoyan
- Applied Physics Letters, Vol. 101, Issue 26
Composition dependence of optical phonon energies and Raman line broadening in hexagonal alloys
journal, March 2002
- Davydov, V. Yu.; Goncharuk, I. N.; Smirnov, A. N.
- Physical Review B, Vol. 65, Issue 12
X-ray scattering from semiconductors and other materials
journal, September 2015
- Noyan, I. C.
- Crystallography Reviews, Vol. 22, Issue 2
MOVPE growth conditions optimization for AlGaN/GaN/Si heterostructures with SiN and LT-AlN interlayers designed for HEMT applications
journal, January 2019
- Wośko, Mateusz; Szymański, Tomasz; Paszkiewicz, Bogdan
- Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 4
Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications
journal, November 2010
- Hurwitz, Elisa N.; Asghar, Muhammad; Melton, Andrew
- Journal of Electronic Materials, Vol. 40, Issue 5
Composition and temperature dependent optical properties of AlxGa1-xN alloy by spectroscopic ellipsometry
journal, November 2017
- Liu, Yao; Li, Qing Xuan; Wan, Ling Yu
- Applied Surface Science, Vol. 421
Growth of high quality n-Al 0.5 Ga 0.5 N thick films by MOCVD
journal, August 2016
- He, Chenguang; Qin, Zhixin; Xu, Fujun
- Materials Letters, Vol. 176
Structural and optical properties of Al x Ga 1−x N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition
journal, January 2017
- Xu, Qingjun; Liu, Bin; Zhang, Shiying
- Superlattices and Microstructures, Vol. 101
Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers
journal, November 2018
- Stanchu, Hryhorii V.; Kuchuk, Andrian V.; Mazur, Yuriy I.
- Crystal Growth & Design, Vol. 19, Issue 1
Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD
journal, March 2019
- Liu, Ningyang; Wang, Qiao; Li, Bo
- The Journal of Physical Chemistry C, Vol. 123, Issue 14
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
journal, April 2016
- He, Chenguang; Qin, Zhixin; Xu, Fujun
- Scientific Reports, Vol. 6, Issue 1
Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations
journal, November 2016
- Lee, H. -P.; Perozek, J.; Rosario, L. D.
- Scientific Reports, Vol. 6, Issue 1
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
journal, September 1997
- Angerer, H.; Brunner, D.; Freudenberg, F.
- Applied Physics Letters, Vol. 71, Issue 11
Stress evolution during metalorganic chemical vapor deposition of GaN
journal, January 1999
- Hearne, S.; Chason, E.; Han, J.
- Applied Physics Letters, Vol. 74, Issue 3
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
journal, July 2000
- Ibbetson, J. P.; Fini, P. T.; Ness, K. D.
- Applied Physics Letters, Vol. 77, Issue 2
Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping
journal, May 2002
- Pereira, S.; Correia, M. R.; Pereira, E.
- Applied Physics Letters, Vol. 80, Issue 21
Energy band bowing parameter in AlxGa1−xN alloys
journal, October 2002
- Yun, Feng; Reshchikov, Michael A.; He, Lei
- Journal of Applied Physics, Vol. 92, Issue 8
Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
journal, October 2002
- Biyikli, Necmi; Aytur, Orhan; Kimukin, Ibrahim
- Applied Physics Letters, Vol. 81, Issue 17
Elastic constants of gallium nitride
journal, March 1996
- Polian, A.; Grimsditch, M.; Grzegory, I.
- Journal of Applied Physics, Vol. 79, Issue 6
Brillouin scattering study of bulk GaN
journal, June 1999
- Yamaguchi, M.; Yagi, T.; Sota, T.
- Journal of Applied Physics, Vol. 85, Issue 12
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
journal, November 1999
- Keller, S.; Parish, G.; Fini, P. T.
- Journal of Applied Physics, Vol. 86, Issue 10
p-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes
journal, December 2012
- Liu, Zhiqiang; Ma, Jun; Yi, Xiaoyan
- Applied Physics Letters, Vol. 101, Issue 26
Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate
journal, January 2013
- Liu, H. F.; Dolmanan, S. B.; Zhang, L.
- Journal of Applied Physics, Vol. 113, Issue 2
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
journal, October 2013
- Choi, Sukwon; Heller, Eric; Dorsey, Donald
- Journal of Applied Physics, Vol. 114, Issue 16
High-resolution X-ray diffraction analysis of Al x Ga 1−x N/In x Ga 1−x N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
journal, May 2014
- Jana, Sanjay Kumar; Mukhopadhyay, Partha; Ghosh, Saptarsi
- Journal of Applied Physics, Vol. 115, Issue 17
X-ray diffraction of III-nitrides
journal, February 2009
- Moram, M. A.; Vickers, M. E.
- Reports on Progress in Physics, Vol. 72, Issue 3
III-nitrides for energy production: photovoltaic and thermoelectric applications
journal, June 2013
- Lu, Na; Ferguson, Ian
- Semiconductor Science and Technology, Vol. 28, Issue 7
Properties of GaN and related compounds studied by means of Raman scattering
journal, September 2002
- Harima, Hiroshi
- Journal of Physics: Condensed Matter, Vol. 14, Issue 38
Strain-related phenomena in GaN thin films
journal, December 1996
- Kisielowski, C.; Krüger, J.; Ruvimov, S.
- Physical Review B, Vol. 54, Issue 24
Vibrational Spectroscopy of Aluminum Nitride
journal, May 1993
- McNeil, Laurie E.; Grimsditch, Marcos; French, Roger H.
- Journal of the American Ceramic Society, Vol. 76, Issue 5
Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction
journal, January 1999
- Wu, M. F.; Yao, Shude; Vantomme, A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 4