High temperature synthesis and characterization of ultrathin tellurium nanostructures

Sapkota, Keshab R.; Lu, Ping; Medlin, Douglas L.; Wang, George T.

doi:10.1063/1.5109899

Title: High temperature synthesis and characterization of ultrathin tellurium nanostructures

Abstract

Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Furthermore, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.

Authors:

Sapkota, Keshab R. ^[1]; Lu, Ping ^[1]; Medlin, Douglas L. ^[1];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Thu Aug 01 00:00:00 EDT 2019

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1570295

Report Number(s):: SAND-2019-10117J
Journal ID: ISSN 2166-532X; 678888

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: APL Materials

Additional Journal Information:: Journal Volume: 7; Journal Issue: 8; Journal ID: ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Sapkota, Keshab R., Lu, Ping, Medlin, Douglas L., and Wang, George T. High temperature synthesis and characterization of ultrathin tellurium nanostructures.  United States: N. p., 2019. 
Web.  doi:10.1063/1.5109899.

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                    Sapkota, Keshab R., Lu, Ping, Medlin, Douglas L., & Wang, George T. High temperature synthesis and characterization of ultrathin tellurium nanostructures.  United States.  https://doi.org/10.1063/1.5109899

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                    Sapkota, Keshab R., Lu, Ping, Medlin, Douglas L., and Wang, George T. Thu .  
"High temperature synthesis and characterization of ultrathin tellurium nanostructures".  United States.  https://doi.org/10.1063/1.5109899.  https://www.osti.gov/servlets/purl/1570295.

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@article{osti_1570295,

  title        = {High temperature synthesis and characterization of ultrathin tellurium nanostructures},

  author       = {Sapkota, Keshab R. and Lu, Ping and Medlin, Douglas L. and Wang, George T.},

  abstractNote = {Thin tellurium (Te) has been predicted as a potential two dimensional system exhibiting superior thermoelectric and electrical properties. Here, we report the synthesis of high quality ultrathin Te nanostructures and the study of their electrical properties at room temperature. High quality ultrathin Te nanostructures are obtained by high temperature vapor phase deposition on c-plane sapphire substrates. The obtained nanostructures are as thin as 3 nm and exhibit α-Te phase with trigonal crystal structure. Room temperature electrical measurements show significantly higher electrical conductivity compared to prior reports of Te in bulk form or in nanostructure form synthesized by low temperature vapor deposition or wet chemical methods. Furthermore, these nanostructures exhibit high field effect hole mobility comparable to black-phosphorous measured previously under similar conditions.},

  doi          = {10.1063/1.5109899},

  journal      = {APL Materials},

  number       = 8,

  volume       = 7,

  place        = {United States},

  year         = {Thu Aug 01 00:00:00 EDT 2019},

  month        = {Thu Aug 01 00:00:00 EDT 2019}

}

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Title: High temperature synthesis and characterization of ultrathin tellurium nanostructures

Abstract

Citation Formats

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth journal, July 2018

Field-effect transistors made from solution-grown two-dimensional tellurene journal, April 2018

Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties journal, February 2018

Epitaxial Growth and Band Structure of Te Film on Graphene journal, July 2017

The Nature of Bonding in Bulk Tellurium Composed of One-Dimensional Helical Chains journal, April 2018

Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction journal, January 2018

Bulk β -Te to few layered β -tellurenes: indirect to direct band-Gap transitions showing semiconducting property journal, September 2017

Synthesis of tellurium nanowires and their transport property journal, February 2009

Black phosphorus field-effect transistors journal, March 2014

Tellurium as a high-performance elemental thermoelectric journal, January 2016

Solution-Synthesized High-Mobility Tellurium Nanoflakes for Short-Wave Infrared Photodetectors journal, June 2018

High-Power Density Piezoelectric Energy Harvesting Using Radially Strained Ultrathin Trigonal Tellurium Nanowire Assembly journal, April 2013

Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping journal, April 2016

Epitaxial growth of large area single-crystalline few-layer MoS 2 with high space charge mobility of 192 cm 2 V −1 s −1 journal, August 2014

Toward Single Atom Chains with Exfoliated Tellurium journal, August 2017

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Role of Carrier Gas Flow and Species Diffusion in Nanowire Growth from Thermal CVD journal, February 2012

Electrical properties of vapour grown tellurium single crystals journal, January 1986

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High-field transport and low-field mobility in tellurium single crystals journal, November 1973

High Mobility Field Effect Transistor from Solution-Processed Needle-Like Tellurium Nanowires journal, December 2010

Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires journal, October 2016

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High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability journal, December 2018

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Epitaxial Growth and Band Structure of Te Film on Graphene text, January 2017

The Nature of Bonding in Bulk Tellurium Composed of One-Dimensional Helical Chains preprint, January 2017

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth
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Few-layer Tellurium: one-dimensional-like layered elementary semiconductor with striking physical properties
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Epitaxial Growth and Band Structure of Te Film on Graphene
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The Nature of Bonding in Bulk Tellurium Composed of One-Dimensional Helical Chains
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Bulk β -Te to few layered β -tellurenes: indirect to direct band-Gap transitions showing semiconducting property
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Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
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The thermodynamic properties of zirconium ditelluride ZrTe2 to 1500 K
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Electrical properties of vapour grown tellurium single crystals
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Electrical transport properties of polycrystalline tellurium films deposited on mica
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High-field transport and low-field mobility in tellurium single crystals
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High Mobility Field Effect Transistor from Solution-Processed Needle-Like Tellurium Nanowires
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Epitaxial Growth and Band Structure of Te Film on Graphene
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