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Title: Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator

Abstract

Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ~$90 K$.

Authors:
 [1];  [2];  [2];  [3];  [2];  [4];  [2];  [2];  [5];  [2];  [6];  [6];  [6];  [2];  [3];  [7];  [4];  [2]
+ Show Author Affiliations
  1. Univ. of California, Los Angeles, CA (United States); Peking Univ., Beijing (China)
  2. Univ. of California, Los Angeles, CA (United States)
  3. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
  4. Hong Kong Univ. (Hong Kong)
  5. Beijing Univ. of Technology, Beijing (China)
  6. Univ. of California, Irvine, CA (United States)
  7. Univ. of California, Riverside, CA (United States). Lab. for Terascale and Terahertz Electronics (LATTE)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Univ. of California, Riverside, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1566382
Alternate Identifier(s):
OSTI ID: 1467952
Grant/Contract Number:  
SC0012670; S000686
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 9; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; phonons; thermal conductivity; thermoelectric; spin dynamics; spintronics

Citation Formats

He, Qing Lin, Yin, Gen, Yu, Luyan, Grutter, Alexander J., Pan, Lei, Chen, Chui-Zhen, Che, Xiaoyu, Yu, Guoqiang, Zhang, Bin, Shao, Qiming, Stern, Alexander L., Casas, Brian, Xia, Jing, Han, Xiaodong, Kirby, Brian J., Lake, Roger K., Law, K. T., and Wang, Kang L. Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator. United States: N. p., 2018. Web. doi:10.1103/physrevlett.121.096802.
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He, Qing Lin, Yin, Gen, Yu, Luyan, Grutter, Alexander J., Pan, Lei, Chen, Chui-Zhen, Che, Xiaoyu, Yu, Guoqiang, Zhang, Bin, Shao, Qiming, Stern, Alexander L., Casas, Brian, Xia, Jing, Han, Xiaodong, Kirby, Brian J., Lake, Roger K., Law, K. T., & Wang, Kang L. Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator. United States. https://doi.org/10.1103/physrevlett.121.096802
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He, Qing Lin, Yin, Gen, Yu, Luyan, Grutter, Alexander J., Pan, Lei, Chen, Chui-Zhen, Che, Xiaoyu, Yu, Guoqiang, Zhang, Bin, Shao, Qiming, Stern, Alexander L., Casas, Brian, Xia, Jing, Han, Xiaodong, Kirby, Brian J., Lake, Roger K., Law, K. T., and Wang, Kang L. Wed . "Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator". United States. https://doi.org/10.1103/physrevlett.121.096802. https://www.osti.gov/servlets/purl/1566382.
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@article{osti_1566382,
title = {Topological Transitions Induced by Antiferromagnetism in a Thin-Film Topological Insulator},
author = {He, Qing Lin and Yin, Gen and Yu, Luyan and Grutter, Alexander J. and Pan, Lei and Chen, Chui-Zhen and Che, Xiaoyu and Yu, Guoqiang and Zhang, Bin and Shao, Qiming and Stern, Alexander L. and Casas, Brian and Xia, Jing and Han, Xiaodong and Kirby, Brian J. and Lake, Roger K. and Law, K. T. and Wang, Kang L.},
abstractNote = {Magnetism in topological insulators (TIs) opens a topologically nontrivial exchange band gap, providing an exciting platform for manipulating the topological order through an external magnetic field. Here, we show that the surface of an antiferromagnetic thin film can magnetize the top and the bottom TI surface states through interfacial couplings. During the magnetization reversal, intermediate spin configurations are ascribed from unsynchronized magnetic switchings. This unsynchronized switching develops antisymmetric magnetoresistance spikes during magnetization reversals, which might originate from a series of topological transitions. With the high Néel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists up to ~$90 K$.},
doi = {10.1103/physrevlett.121.096802},
journal = {Physical Review Letters},
number = 9,
volume = 121,
place = {United States},
year = {Wed Aug 29 00:00:00 EDT 2018},
month = {Wed Aug 29 00:00:00 EDT 2018}
}
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https://doi.org/10.1103/physrevlett.121.096802
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    Works referencing / citing this record:

    Topological insulator: Spintronics and quantum computations
    journal, May 2019

    Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer
    journal, July 2019

    • Liao, Liyang; Chen, Peng; Kou, Xufeng
    • Journal of Physics: Condensed Matter, Vol. 31, Issue 40
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    Antisymmetric magnetoresistance in van der Waals Fe 3 GeTe 2 /graphite/Fe 3 GeTe 2 trilayer heterostructures
    journal, July 2019

    • Albarakati, Sultan; Tan, Cheng; Chen, Zhong-Jia
    • Science Advances, Vol. 5, Issue 7
    • DOI: 10.1126/sciadv.aaw0409
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