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Title: Anomalous electron transport in epitaxial NdNiO 3 films

Abstract

The origin of simultaneous electronic, structural, and magnetic transitions in bulk rare-earth nickelates (RENiO3) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure engineering of these materials offers unique opportunity to decouple the metal-insulator transition (MIT) from the magnetic transition. Yet, the evolution of underlying electronic properties across these decoupled transitions remains largely unexplored. In order to address this, we have calculated Hall effect on a series of epitaxial NdNiO 3 films, spanning a variety of electronic and magnetic phases. We find that the MIT results in only a partially gapped Fermi surface, whereas the full insulating phase forms below the magnetic transition. Moreover, we also find a systematic reduction of the Hall coefficient RH in the metallic phase of these films with epitaxial strain and also a surprising transition to a negative value at large compressive strain. The partially gapped, weakly insulating, paramagnetic phase is reminiscence of pseudogap behavior of high-Tc cuprates. The precursor metallic phase, which undergoes transition to the insulating phase, is a non-Fermi liquid with a temperature exponent n of resistivity of 1, whereas the exponent increases to 4/3 in the noninsulating samples. Such a nickelate phase diagram with sign reversal of RH, a pseudogap phase, and non-Fermi-liquid behavior is intriguingly similar to high-Tc cuprates, giving crucial guidelines to engineer unconventional superconductivity in oxide heterostructures.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [2];  [2];  [3]; ORCiD logo [3];  [4];  [4];  [4]
  1. Indian Inst. of Science, Bengaluru (India)
  2. S.N. Bose National Center for Basic Sciences, Kolkata (India)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
  4. Rutgers Univ., Piscataway, NJ (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1561256
Alternate Identifier(s):
OSTI ID: 1529699
Report Number(s):
BNL-212072-2019-JAAM
Journal ID: ISSN 2469-9950; PRBMDO; TRN: US2000610
Grant/Contract Number:  
SC0012704; SC00012375; AC02-98CH10886; DOE DE-SC 00012375
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 99; Journal Issue: 23; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Ojha, Shashank Kumar, Ray, Sujay, Das, Tanmoy, Middey, S., Sarkar, Sagar, Mahadevan, Priya, Wang, Zhen, Zhu, Yimei, Liu, Xiaoran, Kareev, M., and Chakhalian, J. Anomalous electron transport in epitaxial NdNiO3 films. United States: N. p., 2019. Web. doi:10.1103/PhysRevB.99.235153.
Ojha, Shashank Kumar, Ray, Sujay, Das, Tanmoy, Middey, S., Sarkar, Sagar, Mahadevan, Priya, Wang, Zhen, Zhu, Yimei, Liu, Xiaoran, Kareev, M., & Chakhalian, J. Anomalous electron transport in epitaxial NdNiO3 films. United States. https://doi.org/10.1103/PhysRevB.99.235153
Ojha, Shashank Kumar, Ray, Sujay, Das, Tanmoy, Middey, S., Sarkar, Sagar, Mahadevan, Priya, Wang, Zhen, Zhu, Yimei, Liu, Xiaoran, Kareev, M., and Chakhalian, J. Thu . "Anomalous electron transport in epitaxial NdNiO3 films". United States. https://doi.org/10.1103/PhysRevB.99.235153. https://www.osti.gov/servlets/purl/1561256.
@article{osti_1561256,
title = {Anomalous electron transport in epitaxial NdNiO3 films},
author = {Ojha, Shashank Kumar and Ray, Sujay and Das, Tanmoy and Middey, S. and Sarkar, Sagar and Mahadevan, Priya and Wang, Zhen and Zhu, Yimei and Liu, Xiaoran and Kareev, M. and Chakhalian, J.},
abstractNote = {The origin of simultaneous electronic, structural, and magnetic transitions in bulk rare-earth nickelates (RENiO3) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure engineering of these materials offers unique opportunity to decouple the metal-insulator transition (MIT) from the magnetic transition. Yet, the evolution of underlying electronic properties across these decoupled transitions remains largely unexplored. In order to address this, we have calculated Hall effect on a series of epitaxial NdNiO3 films, spanning a variety of electronic and magnetic phases. We find that the MIT results in only a partially gapped Fermi surface, whereas the full insulating phase forms below the magnetic transition. Moreover, we also find a systematic reduction of the Hall coefficient RH in the metallic phase of these films with epitaxial strain and also a surprising transition to a negative value at large compressive strain. The partially gapped, weakly insulating, paramagnetic phase is reminiscence of pseudogap behavior of high-Tc cuprates. The precursor metallic phase, which undergoes transition to the insulating phase, is a non-Fermi liquid with a temperature exponent n of resistivity of 1, whereas the exponent increases to 4/3 in the noninsulating samples. Such a nickelate phase diagram with sign reversal of RH, a pseudogap phase, and non-Fermi-liquid behavior is intriguingly similar to high-Tc cuprates, giving crucial guidelines to engineer unconventional superconductivity in oxide heterostructures.},
doi = {10.1103/PhysRevB.99.235153},
journal = {Physical Review B},
number = 23,
volume = 99,
place = {United States},
year = {Thu Jun 27 00:00:00 EDT 2019},
month = {Thu Jun 27 00:00:00 EDT 2019}
}

Journal Article:

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Cited by: 13 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) NdNiO3 thin film on single crystalline substrate. (b) Pseudocubic in-plane lattice constant for the substrates used in this work and the corresponding epitaxial strain for NNO. (c) HAADF-STEM image (with false color) of a 20 u.c. NdNiO3 film on NdGaO3 substrate.

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.