A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

Biro, B.; David, G.; Fenyvesi, A.; Haggerty, J. S.; Kierstead, J.; Mannel, E. J.; Majoros, T.; Molnar, J.; Nagy, F.; Stoll, S.; Ujvari, B.; Woody, C. L.

doi:10.1109/TNS.2019.2921102

Title: A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers

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Abstract

The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 ⁸ to 10 ¹² n/cm ² . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels ofmore » radiation exposures.« less

Authors:

Biro, B. ^[1]; David, G. ^[2]; Fenyvesi, A. ^[1]; Haggerty, J. S. ^[3]; Kierstead, J. ^[3];

^[3];

^[4]; Molnar, J. ^[1]; Nagy, F. ^[1]; Stoll, S. ^[3]; Ujvari, B. ^[4];

^[3]

Hungarian Academy of Sciences (Atomki), Debrecen (Hungary)
Stony Brook Univ., NY (United States). Dept. of Physics; Brookhaven National Lab. (BNL), Upton, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Debrecen Univ., Debrecen (Hungary)

Publication Date:: Thu Jun 06 00:00:00 EDT 2019

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Nuclear Physics (NP); National Research, Development and Innovation Fund of Hungary

OSTI Identifier:: 1560008

Report Number(s):: BNL-212053-2019-JAAM
Journal ID: ISSN 0018-9499; TRN: US2000445

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 66; Journal Issue: 7; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; Calorimeters; EIC; gamma rays; multipixel photon counter (MPPC); neutrons; radiation damage; silicon photomultiplier (SiPM); sPHENIX

Citation Formats


                    Biro, B., David, G., Fenyvesi, A., Haggerty, J. S., Kierstead, J., Mannel, E. J., Majoros, T., Molnar, J., Nagy, F., Stoll, S., Ujvari, B., and Woody, C. L. A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers.  United States: N. p., 2019. 
Web.  doi:10.1109/TNS.2019.2921102.

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                    Biro, B., David, G., Fenyvesi, A., Haggerty, J. S., Kierstead, J., Mannel, E. J., Majoros, T., Molnar, J., Nagy, F., Stoll, S., Ujvari, B., & Woody, C. L. A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers.  United States.  https://doi.org/10.1109/TNS.2019.2921102

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                    Biro, B., David, G., Fenyvesi, A., Haggerty, J. S., Kierstead, J., Mannel, E. J., Majoros, T., Molnar, J., Nagy, F., Stoll, S., Ujvari, B., and Woody, C. L. Thu .  
"A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers".  United States.  https://doi.org/10.1109/TNS.2019.2921102.  https://www.osti.gov/servlets/purl/1560008.

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@article{osti_1560008,

  title        = {A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers},

  author       = {Biro, B. and David, G. and Fenyvesi, A. and Haggerty, J. S. and Kierstead, J. and Mannel, E. J. and Majoros, T. and Molnar, J. and Nagy, F. and Stoll, S. and Ujvari, B. and Woody, C. L.},

  abstractNote = {The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.},

  doi          = {10.1109/TNS.2019.2921102},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 7,

  volume       = 66,

  place        = {United States},

  year         = {Thu Jun 06 00:00:00 EDT 2019},

  month        = {Thu Jun 06 00:00:00 EDT 2019}

}

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