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Title: Synthesis, Characterization, and Ultralow Thermal Conductivity of a Lattice-Mismatched SnSe2(MoSe2)1.32 Heterostructure

Abstract

A significant experimental challenge in testing proposed relationships between structure and properties is the synthesis of targeted structures with atomistic control over both the structure and the composition. SnSe2(MoSe2)1.32 was synthesized to test the hypothesis that the low-temperature synthesis of two interleaved structures would result in complete turbostratic disorder and that the disorder would result in ultralow thermal conductivity. SnSe2(MoSe2)1.32 was prepared by depositing elements to form a precursor containing Sn|Se and Mo|Se bilayers, each containing the number of atoms required to form single dichalcogenide planes. Here, the nanoarchitecture of alternating Sn and Mo layers is preserved as the dichalcogenide planes self-assemble at low temperatures. The resulting compound contains well-formed dichalcogenide planes that closely resemble that found in the binary compounds and extensive turbostratic disorder. As expected from proposed structure–property relationships, the thermal conductivity of SnSe2(MoSe2)1.32 is ultralow, ~0.05 W m–1 K–1.

Authors:
 [1];  [2];  [1];  [1];  [3];  [2]; ORCiD logo [1]
  1. Univ. of Oregon, Eugene, OR (United States)
  2. Univ. of Illinois, Urbana, IL (United States)
  3. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1559501
Report Number(s):
SAND-2019-8884J
Journal ID: ISSN 0897-4756; 678014
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 31; Journal Issue: 15; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Hadland, Erik, Jang, Hyejin, Falmbigl, Matthias, Fischer, Robert, Medlin, Douglas L., Cahill, David G., and Johnson, David C. Synthesis, Characterization, and Ultralow Thermal Conductivity of a Lattice-Mismatched SnSe2(MoSe2)1.32 Heterostructure. United States: N. p., 2019. Web. doi:10.1021/acs.chemmater.9b01637.
Hadland, Erik, Jang, Hyejin, Falmbigl, Matthias, Fischer, Robert, Medlin, Douglas L., Cahill, David G., & Johnson, David C. Synthesis, Characterization, and Ultralow Thermal Conductivity of a Lattice-Mismatched SnSe2(MoSe2)1.32 Heterostructure. United States. https://doi.org/10.1021/acs.chemmater.9b01637
Hadland, Erik, Jang, Hyejin, Falmbigl, Matthias, Fischer, Robert, Medlin, Douglas L., Cahill, David G., and Johnson, David C. Mon . "Synthesis, Characterization, and Ultralow Thermal Conductivity of a Lattice-Mismatched SnSe2(MoSe2)1.32 Heterostructure". United States. https://doi.org/10.1021/acs.chemmater.9b01637. https://www.osti.gov/servlets/purl/1559501.
@article{osti_1559501,
title = {Synthesis, Characterization, and Ultralow Thermal Conductivity of a Lattice-Mismatched SnSe2(MoSe2)1.32 Heterostructure},
author = {Hadland, Erik and Jang, Hyejin and Falmbigl, Matthias and Fischer, Robert and Medlin, Douglas L. and Cahill, David G. and Johnson, David C.},
abstractNote = {A significant experimental challenge in testing proposed relationships between structure and properties is the synthesis of targeted structures with atomistic control over both the structure and the composition. SnSe2(MoSe2)1.32 was synthesized to test the hypothesis that the low-temperature synthesis of two interleaved structures would result in complete turbostratic disorder and that the disorder would result in ultralow thermal conductivity. SnSe2(MoSe2)1.32 was prepared by depositing elements to form a precursor containing Sn|Se and Mo|Se bilayers, each containing the number of atoms required to form single dichalcogenide planes. Here, the nanoarchitecture of alternating Sn and Mo layers is preserved as the dichalcogenide planes self-assemble at low temperatures. The resulting compound contains well-formed dichalcogenide planes that closely resemble that found in the binary compounds and extensive turbostratic disorder. As expected from proposed structure–property relationships, the thermal conductivity of SnSe2(MoSe2)1.32 is ultralow, ~0.05 W m–1 K–1.},
doi = {10.1021/acs.chemmater.9b01637},
journal = {Chemistry of Materials},
number = 15,
volume = 31,
place = {United States},
year = {Mon Jul 08 00:00:00 EDT 2019},
month = {Mon Jul 08 00:00:00 EDT 2019}
}

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Cited by: 12 works
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Figures / Tables:

Figure 1 Figure 1: A schematic representation of the targeted SnSe2(MoSe2)1.32 structure.

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