High-pressure, high-temperature molecular doping of nanodiamond
Abstract
The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically inactive argon pressure medium, which may explain the hysteresis effects observed in other high-pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond and may enable the controlled generation of designer defects.
- Authors:
-
- Univ. of Washington, Seattle, WA (United States)
- Naval Research Lab, Washington, D.C. (United States)
- Univ. of Washington, Seattle, WA (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Publication Date:
- Research Org.:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1557733
- Report Number(s):
- PNNL-SA-145794
Journal ID: ISSN 2375-2548
- Grant/Contract Number:
- AC05-76RL01830
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 5; Journal Issue: 5; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Crane, Matthew J., Petrone, Alessio, Beck, Ryan A., Lim, Matthew B., Zhou, Xiaoyuan, Li, Xiaosong, Stroud, Rhonda M., and Pauzauskie, Peter J. High-pressure, high-temperature molecular doping of nanodiamond. United States: N. p., 2019.
Web. doi:10.1126/sciadv.aau6073.
Crane, Matthew J., Petrone, Alessio, Beck, Ryan A., Lim, Matthew B., Zhou, Xiaoyuan, Li, Xiaosong, Stroud, Rhonda M., & Pauzauskie, Peter J. High-pressure, high-temperature molecular doping of nanodiamond. United States. https://doi.org/10.1126/sciadv.aau6073
Crane, Matthew J., Petrone, Alessio, Beck, Ryan A., Lim, Matthew B., Zhou, Xiaoyuan, Li, Xiaosong, Stroud, Rhonda M., and Pauzauskie, Peter J. Fri .
"High-pressure, high-temperature molecular doping of nanodiamond". United States. https://doi.org/10.1126/sciadv.aau6073. https://www.osti.gov/servlets/purl/1557733.
@article{osti_1557733,
title = {High-pressure, high-temperature molecular doping of nanodiamond},
author = {Crane, Matthew J. and Petrone, Alessio and Beck, Ryan A. and Lim, Matthew B. and Zhou, Xiaoyuan and Li, Xiaosong and Stroud, Rhonda M. and Pauzauskie, Peter J.},
abstractNote = {The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion implantation by synthesis of a doped amorphous carbon precursor and transformation at high temperatures and high pressures. To explore this bottom-up method for color center generation, we rationally create silicon vacancy defects in nanodiamond and investigate them for optical pressure metrology. In addition, we show that this process can generate noble gas defects within diamond from the typically inactive argon pressure medium, which may explain the hysteresis effects observed in other high-pressure experiments and the presence of noble gases in some meteoritic nanodiamonds. Our results illustrate a general method to produce color centers in diamond and may enable the controlled generation of designer defects.},
doi = {10.1126/sciadv.aau6073},
journal = {Science Advances},
number = 5,
volume = 5,
place = {United States},
year = {Fri May 03 00:00:00 EDT 2019},
month = {Fri May 03 00:00:00 EDT 2019}
}
Web of Science
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