Electronic coupling between a FeSe monolayer film and substrate
Abstract
Several experimental groups have reported superconductivity in single unit cell layers of FeSe on SrTiO3 and a few other substrates, with critical temperature $$T_c$$ reports ranging up to 100 K, and a variety of theoretical work has been done. In this work we examine more closely the interaction of a single FeSe layer with a TiO2 terminated SrTiO3(001) (STO) substrate. Several situations are analyzed: the underlying ideal interface, the effect of zpolarized longitudinal optic [LO($$\hat{z}$$)] phonons in STO, electron doping of the STO substrate, substitution of Se by the bordering chalcogenides S and Te, and doping by adsorption of K on the FeSe surface. These results complement earlier studies of O and Se vacancies. The O py, py surface band of STO persists at the interface, and by sharing holes with the hole pocket of FeSe it plays a part in the behavior around the interface, initially by determining the Fe Fermi level lineup with the STO band gap. The LO($$\hat{z}$$) mode causes strong band shifts around the interface but the strength of coupling to the Fe bands cannot be obtained with our methods. Adsorption of 25% K (one K per four Fe) fills the small O interface hole pocket and donates the rest of the electrons to the Fe hole pockets, filling them.
- Authors:
-
- Chinese Academy of Sciences (CAS), Beijing (China). Key Lab. of Materials Physics; Univ. of Science and Technology of China, Hefei (China); Univ. of California, Davis, CA (United States). Dept. of Physics
- Univ. of California, Davis, CA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Org.:
- USDOE Office of Science (SC); China Scholarship Council (CSC); National Science Foundation (NSF)
- OSTI Identifier:
- 1544398
- Alternate Identifier(s):
- OSTI ID: 1349961
- Grant/Contract Number:
- AC02-05CH11231; DMR 1607139
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 16; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Huang, Y. N., and Pickett, W. E. Electronic coupling between a FeSe monolayer film and SrTiO3 substrate. United States: N. p., 2017.
Web. doi:10.1103/PhysRevB.95.165107.
Huang, Y. N., & Pickett, W. E. Electronic coupling between a FeSe monolayer film and SrTiO3 substrate. United States. https://doi.org/10.1103/PhysRevB.95.165107
Huang, Y. N., and Pickett, W. E. Wed .
"Electronic coupling between a FeSe monolayer film and SrTiO3 substrate". United States. https://doi.org/10.1103/PhysRevB.95.165107. https://www.osti.gov/servlets/purl/1544398.
@article{osti_1544398,
title = {Electronic coupling between a FeSe monolayer film and SrTiO3 substrate},
author = {Huang, Y. N. and Pickett, W. E.},
abstractNote = {Several experimental groups have reported superconductivity in single unit cell layers of FeSe on SrTiO3 and a few other substrates, with critical temperature $T_c$ reports ranging up to 100 K, and a variety of theoretical work has been done. In this work we examine more closely the interaction of a single FeSe layer with a TiO2 terminated SrTiO3(001) (STO) substrate. Several situations are analyzed: the underlying ideal interface, the effect of zpolarized longitudinal optic [LO($\hat{z}$)] phonons in STO, electron doping of the STO substrate, substitution of Se by the bordering chalcogenides S and Te, and doping by adsorption of K on the FeSe surface. These results complement earlier studies of O and Se vacancies. The O py, py surface band of STO persists at the interface, and by sharing holes with the hole pocket of FeSe it plays a part in the behavior around the interface, initially by determining the Fe Fermi level lineup with the STO band gap. The LO($\hat{z}$) mode causes strong band shifts around the interface but the strength of coupling to the Fe bands cannot be obtained with our methods. Adsorption of 25% K (one K per four Fe) fills the small O interface hole pocket and donates the rest of the electrons to the Fe hole pockets, filling them.},
doi = {10.1103/PhysRevB.95.165107},
journal = {Physical Review B},
number = 16,
volume = 95,
place = {United States},
year = {Wed Apr 05 00:00:00 EDT 2017},
month = {Wed Apr 05 00:00:00 EDT 2017}
}
Web of Science
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