Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

Wang, Jian -Jun; Bayer, Thorsten J. M.; Wang, Rui; Carter, Jared J.; Randall, Clive A.; Chen, Long -Qing

doi:10.1063/1.4990677

Title: Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

Abstract

Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO₃ single crystal is investigated with a combination of experimental impedance measurements and computational modelling. As a result, it is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.

Authors:

Wang, Jian -Jun ^[1];

^[1]; Wang, Rui ^[1]; Carter, Jared J. ^[1]; Randall, Clive A. ^[1]; Chen, Long -Qing ^[1]

The Pennsylvania State Univ., University Park, PA (United States)

Publication Date:: Thu Jun 29 00:00:00 EDT 2017

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1543836

Alternate Identifier(s):: OSTI ID: 1367362

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 26; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Physics

Citation Formats


                    Wang, Jian -Jun, Bayer, Thorsten J. M., Wang, Rui, Carter, Jared J., Randall, Clive A., and Chen, Long -Qing. Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4990677.

Copy to clipboard


                    Wang, Jian -Jun, Bayer, Thorsten J. M., Wang, Rui, Carter, Jared J., Randall, Clive A., & Chen, Long -Qing. Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection.  United States.  https://doi.org/10.1063/1.4990677

Copy to clipboard


                    Wang, Jian -Jun, Bayer, Thorsten J. M., Wang, Rui, Carter, Jared J., Randall, Clive A., and Chen, Long -Qing. Thu .  
"Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection".  United States.  https://doi.org/10.1063/1.4990677.  https://www.osti.gov/servlets/purl/1543836.

Copy to clipboard


                    
@article{osti_1543836,

  title        = {Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection},

  author       = {Wang, Jian -Jun and Bayer, Thorsten J. M. and Wang, Rui and Carter, Jared J. and Randall, Clive A. and Chen, Long -Qing},

  abstractNote = {Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. As a result, it is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.},

  doi          = {10.1063/1.4990677},

  journal      = {Applied Physics Letters},

  number       = 26,

  volume       = 110,

  place        = {United States},

  year         = {Thu Jun 29 00:00:00 EDT 2017},

  month        = {Thu Jun 29 00:00:00 EDT 2017}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1063/1.4990677

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 11 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism
journal, June 1990

Baiatu, Tudor; Waser, Rainer; Hardtl, Karl-Heinz
Journal of the American Ceramic Society, Vol. 73, Issue 6
DOI: 10.1111/j.1151-2916.1990.tb09811.x

Interface Properties of Dielectric Oxides
journal, January 2016

Klein, Andreas
Journal of the American Ceramic Society, Vol. 99, Issue 2
DOI: 10.1111/jace.14074

Barrier height at $(Ba, Sr) {TiO}_{3} / Pt$ interfaces studied by photoemission
journal, May 2008

Schafranek, R.; Payan, S.; Maglione, M.
Physical Review B, Vol. 77, Issue 19
DOI: 10.1103/PhysRevB.77.195310

dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals
journal, June 1990

Waser, Rainer; Baiatu, Tudor; Hardtl, Karl-Heinz
Journal of the American Ceramic Society, Vol. 73, Issue 6
DOI: 10.1111/j.1151-2916.1990.tb09810.x

Applications of Modern Ferroelectrics
journal, February 2007

Scott, J. F.
Science, Vol. 315, Issue 5814
DOI: 10.1126/science.1129564

Partial Conductivities in SrTiO ₃ : Bulk Polarization Experiments, Oxygen Concentration Cell Measurements, and Defect-Chemical Modeling
journal, December 1995

Denk, Ingrid; Münch, Wolfram; Maier, Joachim
Journal of the American Ceramic Society, Vol. 78, Issue 12
DOI: 10.1111/j.1151-2916.1995.tb07963.x

Determination of Schottky barrier profile at Pt/SrTiO ₃ :Nb junction by x-ray photoemission
journal, December 2012

Ohashi, Naoki; Yoshikawa, Hideki; Yamashita, Yoshiyuki
Applied Physics Letters, Vol. 101, Issue 25
DOI: 10.1063/1.4772628

Double‐carrier injection and recombination in insulators, including diffusion effects
journal, October 1984

Torpey, Peter A.
Journal of Applied Physics, Vol. 56, Issue 8
DOI: 10.1063/1.334262

Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal
journal, April 2016

Wang, Jian-Jun; Huang, Hou-Bing; Bayer, Thorsten J. M.
Acta Materialia, Vol. 108
DOI: 10.1016/j.actamat.2016.02.022

High temperature transport properties at metal/SrTiO3 interfaces
journal, June 1999

Kawada, Tatsuya; Iizawa, Naofumi; Tomida, Michihisa
Journal of the European Ceramic Society, Vol. 19, Issue 6-7
DOI: 10.1016/S0955-2219(98)00297-0

Charge injection in SrTiO3 thin films
journal, May 1997

Dietz, Guido W.; Waser, Rainer
Thin Solid Films, Vol. 299, Issue 1-2
DOI: 10.1016/S0040-6090(96)09073-6

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Shockley, W.; Read, W. T.
Physical Review, Vol. 87, Issue 5
DOI: 10.1103/PhysRev.87.835

Grain boundaries in dielectric and mixed-conducting ceramics
journal, February 2000

Waser, R.; Hagenbeck, R.
Acta Materialia, Vol. 48, Issue 4
DOI: 10.1016/S1359-6454(99)00367-5

Voltage-Dependent Bulk Resistivity of SrTiO ₃ :Mg Ceramics
journal, June 2014

Gil Escrig, Lidon; Prades, Marta; Beltrán, Héctor
Journal of the American Ceramic Society, Vol. 97, Issue 9
DOI: 10.1111/jace.13004

The relation of electrical conductivity profiles and modulus data using the example of STO:Fe single crystals: A path to improve the model of resistance degradation
journal, September 2016

Bayer, Thorsten J. M.; Wang, Jian-Jun; Carter, Jared J.
Acta Materialia, Vol. 117
DOI: 10.1016/j.actamat.2016.07.024

Mobility-Dependent Charge Injection into an Organic Semiconductor
journal, April 2001

Shen, Yulong; Klein, Matthias W.; Jacobs, Daniel B.
Physical Review Letters, Vol. 86, Issue 17
DOI: 10.1103/PhysRevLett.86.3867

Intrinsic energy band alignment of functional oxides: Intrinsic energy band alignment of functional oxides
journal, March 2014

Li, Shunyi; Chen, Feng; Schafranek, Robert
physica status solidi (RRL) - Rapid Research Letters, Vol. 8, Issue 6
DOI: 10.1002/pssr.201409034

Time Evolution of the Potential Distribution in Earth Alkaline Titanates under de Voltage Stress
journal, December 1988

Raith, A.; Reijnen, P.; Waser, R.
Berichte der Bunsengesellschaft für physikalische Chemie, Vol. 92, Issue 12
DOI: 10.1002/bbpc.198800361

Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices
journal, September 2006

Auciello, Orlando
Journal of Applied Physics, Vol. 100, Issue 5
DOI: 10.1063/1.2337005

Electrochemical Boundary Conditions for Resistance Degradation of Doped Alkaline-Earth Titanates
journal, December 1989

Waser, Rainer M.
Journal of the American Ceramic Society, Vol. 72, Issue 12
DOI: 10.1111/j.1151-2916.1989.tb06067.x

Microscopic View of Charge Injection in an Organic Semiconductor
journal, September 2004

Silveira, William R.; Marohn, John A.
Physical Review Letters, Vol. 93, Issue 11
DOI: 10.1103/PhysRevLett.93.116104

Field-effect electroluminescence in silicon nanocrystals
journal, January 2005

Walters, Robert J.; Bourianoff, George I.; Atwater, Harry A.
Nature Materials, Vol. 4, Issue 2
DOI: 10.1038/nmat1307

Electroceramics: Characterization by Impedance Spectroscopy
journal, March 1990

Irvine, John T. S.; Sinclair, Derek C.; West, Anthony R.
Advanced Materials, Vol. 2, Issue 3
DOI: 10.1002/adma.19900020304

Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K
journal, October 1995

Moos, R.; Menesklou, W.; H�rdtl, K. H.
Applied Physics A Materials Science & Processing, Vol. 61, Issue 4
DOI: 10.1007/BF01540113

High-efficiency quantum-dot light-emitting devices with enhanced charge injection
journal, April 2013

Mashford, Benjamin S.; Stevenson, Matthew; Popovic, Zoran
Nature Photonics, Vol. 7, Issue 5
DOI: 10.1038/nphoton.2013.70

Electronic-transport behavior in single-crystalline ${Ba}_{0.03}$ ${Sr}_{0.97}$ ${TiO}_{3}$
journal, November 1986

Choi, G. M.; Tuller, H. L.; Goldschmidt, D.
Physical Review B, Vol. 34, Issue 10
DOI: 10.1103/PhysRevB.34.6972

Space-Charge Conduction in Solids
journal, December 1966

Tredgold, R. H.; Hagger, H. J.
Physics Today, Vol. 19, Issue 12
DOI: 10.1063/1.3047875

Theory of conduction and breakdown in perovskite thin films
journal, November 1992

Waser, Rainer; Klee, Mareike
Integrated Ferroelectrics, Vol. 2, Issue 1-4
DOI: 10.1080/10584589208215729

Nonstoichiometry in SrTiO[sub 3]
journal, January 1981

Chan, N. -H.
Journal of The Electrochemical Society, Vol. 128, Issue 8
DOI: 10.1149/1.2127727

Low-Temperature Ionic Conductivity of an Acceptor-Doped Perovskite: I. Impedance of Single-Crystal SrTiO ₃
journal, June 2016

Maier, Russell A.; Randall, Clive A.
Journal of the American Ceramic Society, Vol. 99, Issue 10
DOI: 10.1111/jace.14348

Electron-Hole Recombination in Germanium
journal, July 1952

Hall, R. N.
Physical Review, Vol. 87, Issue 2
DOI: 10.1103/PhysRev.87.387

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
journal, September 1957

Sah, Chih-tang; Noyce, Robert; Shockley, William
Proceedings of the IRE, Vol. 45, Issue 9
DOI: 10.1109/JRPROC.1957.278528

A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection
journal, November 2012

Guo, Fawen; Yang, Bin; Yuan, Yongbo
Nature Nanotechnology, Vol. 7, Issue 12
DOI: 10.1038/nnano.2012.187

Finite-size versus interface-proximity effects in thin-film epitaxial ${SrTiO}_{3}$
journal, June 2014

De Souza, R. A.; Gunkel, F.; Hoffmann-Eifert, S.
Physical Review B, Vol. 89, Issue 24
DOI: 10.1103/PhysRevB.89.241401

Works referencing / citing this record:

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage
journal, December 2017

Bayer, T. J. M.; Carter, J. J.; Wang, Jian-Jun
Journal of Applied Physics, Vol. 122, Issue 24
DOI: 10.1063/1.5006062

0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance
journal, February 2018

Zhang, Yulei; Li, Weili; Qiao, Yulong
Applied Physics Letters, Vol. 112, Issue 9
DOI: 10.1063/1.5020679

Conductivity of iron‐doped strontium titanate in the quenched and degraded states
journal, December 2018

Long, Daniel M.; Cai, Biya; Baker, Jonathon N.
Journal of the American Ceramic Society, Vol. 102, Issue 6
DOI: 10.1111/jace.16212

Local structural changes due to the electric field‐induced migration of oxygen vacancies at Fe‐doped SrTiO ₃ interfaces
journal, January 2019

Ascienzo, David; Kurt, Onur; Greenbaum, Steve
Journal of the American Ceramic Society, Vol. 102, Issue 7
DOI: 10.1111/jace.16289

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO ₃ thin film
journal, January 2019

Cao, Ye; Wang, Jianjun; Chen, Long‐Qing
Journal of the American Ceramic Society, Vol. 102, Issue 7
DOI: 10.1111/jace.16291

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage
text, January 2021

Bayer, Thorsten J. M.; Carter, J. J.; Wang, Jian-Jun
AIP Publishing
DOI: 10.26083/tuprints-00019913

Similar Records in DOE PAGES and OSTI.GOV collections:

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Technical Report Luepke, Gunter

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry ismore »« less
https://doi.org/10.2172/1638826

Full Text Available
HIGH-DIELECTRIC-CONSTANT MATERIALS AS CAPACITOR DIELECTRICS-A STUDY IN DIELECTRIC SPECTROSCOPY. Final Report. Technical Report No. 145

Technical Report von Hippel, A ; Westphal, W B

A fundamental study is presented comparing the electric properties for materials of "normal" dielectric constant (Al/sub 2/O/sub 3/ and MgTiO/sub 3/) with those of high dielectric constant (TiO/sub 2/, CaTiCO/sub 3/, SrTiO/sub 3/, STABa/sub 0.65Sr/sub 0.35/! STATiO/sub 3/, and BaTiO/sub 3/). Single crystals and ceramics, as far as available, were investigated from d-c to the microwave range as function of time, temperature, field strength, and prehistory. Three types of relaxation spectra were identified, one caused by dipolar groups in unequal double wells, the other two by charge carriers stopped in the volume of the material or in front of themore »« less
Electrical properties of Au/ and YBa sub 2 Cu sub 3 O sub 7 minus x /SrTi sub 1 minus y Nb sub y O sub 3 diodes

Journal Article Yoshida, A ; Tamura, H ; Gotoh, K ; ... - Journal of Applied Physics; (United States)

Electrical properties of Au/ and YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}/SrTi{sub 1{minus}{ital y}}Nb{sub {ital y}}O{sub 3} heterojunctions were studied by measuring their capacitance-voltage, current-voltage, and conductance-voltage characteristics. The heterostructures were made by depositing Au or YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films on SrTi{sub 1{minus}{ital y}}Nb{sub {ital y}}O{sub 3} substrates. The results of the capacitance-voltage measurement indicated that there was an interfacial layer having a dielectric constant lower than that of bulk SrTiO{sub 3} at the Au/SrTiO{sub 3} and YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}}/SrTiO{sub 3} interfaces. The current-voltage characteristics of the Au/SrTi{sub 1{minus}{ital y}}Nb{sub {ital y}}O{sub 3} diodes with substrate Nb concentrationsmore »« less
https://doi.org/10.1063/1.348999
Electric Field Penetration in Au/Nb:SrTiO3 Schottky Junctions Probed by Bias-Dependent Internal Photoemission

Journal Article Hikita, Y - Submitted to Applied Physics Letters 98, 192103 (2011)

Electric field penetration into the metallic side of a Schottky junction is in principle a universal phenomenon, the magnitude of which increases with the semiconductor permittivity. Here, we quantitatively probe this effect using bias-dependent internal photoemission spectroscopy at the Schottky junction between a large dielectric permittivity semiconductor SrTiO{sub 3} and gold. A clear linear reduction of the barrier height with increasing interface electric field was observed, highlighting the importance of field penetration into the gold. The interfacial permittivity of SrTiO{sub 3} at the interface is reduced from the bulk value, reflecting intrinsic suppression at the interface.
https://doi.org/10.1063/1.3589375

Full Text Available
Low temperature dielectric and conductivity relaxation studies on magnetoelectric Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3}

Journal Article Matteppanavar, Shidaling ; Shivaraja, I. ; Angadi, Basavaraj ; ... - AIP Conference Proceedings

The single phase perovskite Pb(Fe{sub 2/3}W{sub 1/3})O{sub 3} [PFW] was synthesized by modified low – temperature (sintering at 850°C) solid-state reaction. Rietveld refinement ofroom temperature (RT) X-ray diffraction (XRD) and neutron diffraction (ND) patterns of the samples confirm the single phase formation with cubic structure (Pm-3m). Surface morphology of the compounds was studied by Scanning electron microscope (SEM) and average grain size was estimated to be ∼2 µm. The RT dielectric properties of PFW ceramic are studied as a function of frequency from 100 - 1MHz. The temperature dependent (120 – 293K) dielectric properties were studied at few selected frequencies. Wemore »« less
https://doi.org/10.1063/1.4946159

Similar Records

Title: Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

Abstract

Citation Formats

dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism journal, June 1990

Interface Properties of Dielectric Oxides journal, January 2016

Barrier height at ( Ba , Sr ) TiO 3 / Pt interfaces studied by photoemission journal, May 2008

dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals journal, June 1990

Applications of Modern Ferroelectrics journal, February 2007

Partial Conductivities in SrTiO 3 : Bulk Polarization Experiments, Oxygen Concentration Cell Measurements, and Defect-Chemical Modeling journal, December 1995

Determination of Schottky barrier profile at Pt/SrTiO 3 :Nb junction by x-ray photoemission journal, December 2012

Double‐carrier injection and recombination in insulators, including diffusion effects journal, October 1984

Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal journal, April 2016

High temperature transport properties at metal/SrTiO3 interfaces journal, June 1999

Charge injection in SrTiO3 thin films journal, May 1997

Statistics of the Recombinations of Holes and Electrons journal, September 1952

Grain boundaries in dielectric and mixed-conducting ceramics journal, February 2000

Voltage-Dependent Bulk Resistivity of SrTiO 3 :Mg Ceramics journal, June 2014

The relation of electrical conductivity profiles and modulus data using the example of STO:Fe single crystals: A path to improve the model of resistance degradation journal, September 2016

Mobility-Dependent Charge Injection into an Organic Semiconductor journal, April 2001

Intrinsic energy band alignment of functional oxides: Intrinsic energy band alignment of functional oxides journal, March 2014

Time Evolution of the Potential Distribution in Earth Alkaline Titanates under de Voltage Stress journal, December 1988

Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices journal, September 2006

Electrochemical Boundary Conditions for Resistance Degradation of Doped Alkaline-Earth Titanates journal, December 1989

Microscopic View of Charge Injection in an Organic Semiconductor journal, September 2004

Field-effect electroluminescence in silicon nanocrystals journal, January 2005

Electroceramics: Characterization by Impedance Spectroscopy journal, March 1990

Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K journal, October 1995

High-efficiency quantum-dot light-emitting devices with enhanced charge injection journal, April 2013

Electronic-transport behavior in single-crystalline Ba 0.03 Sr 0.97 TiO 3 journal, November 1986

Space-Charge Conduction in Solids journal, December 1966

Theory of conduction and breakdown in perovskite thin films journal, November 1992

Nonstoichiometry in SrTiO[sub 3] journal, January 1981

Low-Temperature Ionic Conductivity of an Acceptor-Doped Perovskite: I. Impedance of Single-Crystal SrTiO 3 journal, June 2016

Electron-Hole Recombination in Germanium journal, July 1952

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics journal, September 1957

A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection journal, November 2012

Finite-size versus interface-proximity effects in thin-film epitaxial SrTiO 3 journal, June 2014

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage journal, December 2017

0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance journal, February 2018

Conductivity of iron‐doped strontium titanate in the quenched and degraded states journal, December 2018

Local structural changes due to the electric field‐induced migration of oxygen vacancies at Fe‐doped SrTiO 3 interfaces journal, January 2019

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO 3 thin film journal, January 2019

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage text, January 2021

dc Electrical Degradation of Perovskite-Type Titanates: III, A Model of the Mechanism
journal, June 1990

Interface Properties of Dielectric Oxides
journal, January 2016

Barrier height at $(Ba, Sr) {TiO}_{3} / Pt$ interfaces studied by photoemission
journal, May 2008

dc Electrical Degradation of Perovskite-Type Titanates: II, Single Crystals
journal, June 1990

Applications of Modern Ferroelectrics
journal, February 2007

Partial Conductivities in SrTiO ₃ : Bulk Polarization Experiments, Oxygen Concentration Cell Measurements, and Defect-Chemical Modeling
journal, December 1995

Determination of Schottky barrier profile at Pt/SrTiO ₃ :Nb junction by x-ray photoemission
journal, December 2012

Double‐carrier injection and recombination in insulators, including diffusion effects
journal, October 1984

Defect chemistry and resistance degradation in Fe-doped SrTiO3 single crystal
journal, April 2016

High temperature transport properties at metal/SrTiO3 interfaces
journal, June 1999

Charge injection in SrTiO3 thin films
journal, May 1997

Statistics of the Recombinations of Holes and Electrons
journal, September 1952

Grain boundaries in dielectric and mixed-conducting ceramics
journal, February 2000

Voltage-Dependent Bulk Resistivity of SrTiO ₃ :Mg Ceramics
journal, June 2014

The relation of electrical conductivity profiles and modulus data using the example of STO:Fe single crystals: A path to improve the model of resistance degradation
journal, September 2016

Mobility-Dependent Charge Injection into an Organic Semiconductor
journal, April 2001

Intrinsic energy band alignment of functional oxides: Intrinsic energy band alignment of functional oxides
journal, March 2014

Time Evolution of the Potential Distribution in Earth Alkaline Titanates under de Voltage Stress
journal, December 1988

Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices
journal, September 2006

Electrochemical Boundary Conditions for Resistance Degradation of Doped Alkaline-Earth Titanates
journal, December 1989

Microscopic View of Charge Injection in an Organic Semiconductor
journal, September 2004

Field-effect electroluminescence in silicon nanocrystals
journal, January 2005

Electroceramics: Characterization by Impedance Spectroscopy
journal, March 1990

Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K
journal, October 1995

High-efficiency quantum-dot light-emitting devices with enhanced charge injection
journal, April 2013

Electronic-transport behavior in single-crystalline ${Ba}_{0.03}$ ${Sr}_{0.97}$ ${TiO}_{3}$
journal, November 1986

Space-Charge Conduction in Solids
journal, December 1966

Theory of conduction and breakdown in perovskite thin films
journal, November 1992

Nonstoichiometry in SrTiO[sub 3]
journal, January 1981

Low-Temperature Ionic Conductivity of an Acceptor-Doped Perovskite: I. Impedance of Single-Crystal SrTiO ₃
journal, June 2016

Electron-Hole Recombination in Germanium
journal, July 1952

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
journal, September 1957

A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection
journal, November 2012

Finite-size versus interface-proximity effects in thin-film epitaxial ${SrTiO}_{3}$
journal, June 2014

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage
journal, December 2017

0.6ST-0.4NBT thin film with low level Mn doping as a lead-free ferroelectric capacitor with high energy storage performance
journal, February 2018

Conductivity of iron‐doped strontium titanate in the quenched and degraded states
journal, December 2018

Local structural changes due to the electric field‐induced migration of oxygen vacancies at Fe‐doped SrTiO ₃ interfaces
journal, January 2019

Computational modeling of grain boundary electrostatic effect in polycrystalline SrTiO ₃ thin film
journal, January 2019

Determination of electrical properties of degraded mixed ionic conductors: Impedance studies with applied dc voltage
text, January 2021