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Title: Silicon Nanoribbon pH Sensors Protected by a Barrier Membrane with Carbon Nanotube Porins

Abstract

Limited biocompatibility and fouling propensity can restrict real-world applications of a large variety of biosensors. Biological systems are adept at protecting and separating vital components of biological machinery with semipermeable membranes that often contain defined pores and gates to restrict transmembrane transport only to specific species. Here we use a similar approach for creating fouling-resistant pH sensors. We integrate silicon nanoribbon transistor sensors with an antifouling lipid bilayer coating that contains proton-permeable carbon nanotube porin (CNTP) channels and demonstrate robust pH detection in a variety of complex biological fluids.

Authors:
 [1]; ORCiD logo [2];  [2]; ORCiD logo [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Univ. of California, Merced, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1542712
Report Number(s):
LLNL-JRNL-759003
Journal ID: ISSN 1530-6984; 947098
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 19; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Chen, Xi, Zhang, Huanan, Tunuguntla, Ramya H., and Noy, Aleksandr. Silicon Nanoribbon pH Sensors Protected by a Barrier Membrane with Carbon Nanotube Porins. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.8b02898.
Chen, Xi, Zhang, Huanan, Tunuguntla, Ramya H., & Noy, Aleksandr. Silicon Nanoribbon pH Sensors Protected by a Barrier Membrane with Carbon Nanotube Porins. United States. https://doi.org/10.1021/acs.nanolett.8b02898
Chen, Xi, Zhang, Huanan, Tunuguntla, Ramya H., and Noy, Aleksandr. Thu . "Silicon Nanoribbon pH Sensors Protected by a Barrier Membrane with Carbon Nanotube Porins". United States. https://doi.org/10.1021/acs.nanolett.8b02898. https://www.osti.gov/servlets/purl/1542712.
@article{osti_1542712,
title = {Silicon Nanoribbon pH Sensors Protected by a Barrier Membrane with Carbon Nanotube Porins},
author = {Chen, Xi and Zhang, Huanan and Tunuguntla, Ramya H. and Noy, Aleksandr},
abstractNote = {Limited biocompatibility and fouling propensity can restrict real-world applications of a large variety of biosensors. Biological systems are adept at protecting and separating vital components of biological machinery with semipermeable membranes that often contain defined pores and gates to restrict transmembrane transport only to specific species. Here we use a similar approach for creating fouling-resistant pH sensors. We integrate silicon nanoribbon transistor sensors with an antifouling lipid bilayer coating that contains proton-permeable carbon nanotube porin (CNTP) channels and demonstrate robust pH detection in a variety of complex biological fluids.},
doi = {10.1021/acs.nanolett.8b02898},
journal = {Nano Letters},
number = 2,
volume = 19,
place = {United States},
year = {Thu Oct 04 00:00:00 EDT 2018},
month = {Thu Oct 04 00:00:00 EDT 2018}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 22 works
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Figures / Tables:

Figure 1 Figure 1: Silicon nanoribbon (SiNR) field-effect transistors. A. Schematics showing a silicon nanoribbon transistor device coated with the protective lipid layer. Source and drain electrodes of the device are marked as S and D, respectively. Inset shows a magnified region of the device showing carbon nanotube porins inserted into themore » lipid bilayer. B. Scanning electron microscopy images of (left) an area of the chip showing several devices, and (right) a magnified image of an individual transistor device showing the source and drain electrodes connected with a nanoribbon and channel etched in the passivating layer to expose the central part of the ribbon. C. A plot of the source-drain current, $I$SD, vs gate voltage, $V$$G$ (transfer characteristics) for an uncoated SiNR device. Dashed line indicates the gate voltage of -1.18V, corresponding to the maximum trans-conductance of 3.8nS. D. Time trace of the source-drain current ($I$SD) of the uncoated device recorded as it was exposed to different pH buffer solutions (pH values indicated on the graph).« less

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