InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion
Abstract
InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104–3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ~0.5 Sun. Finally, the estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Korea Research Inst. of Standards and Science, Daejeon (South Korea). Advanced Instrumentation Inst.
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering; Korea Research Inst. of Standards and Science, Daejeon (South Korea). Advanced Instrumentation Inst.
- Publication Date:
- Research Org.:
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1540160
- Alternate Identifier(s):
- OSTI ID: 1422662
- Grant/Contract Number:
- AR0000472
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 123; Journal Issue: 8; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; physics
Citation Formats
Kim, T. W., Albert, B. R., Kimerling, L. C., and Michel, J. InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion. United States: N. p., 2018.
Web. doi:10.1063/1.5018082.
Kim, T. W., Albert, B. R., Kimerling, L. C., & Michel, J. InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion. United States. https://doi.org/10.1063/1.5018082
Kim, T. W., Albert, B. R., Kimerling, L. C., and Michel, J. Mon .
"InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion". United States. https://doi.org/10.1063/1.5018082. https://www.osti.gov/servlets/purl/1540160.
@article{osti_1540160,
title = {InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion},
author = {Kim, T. W. and Albert, B. R. and Kimerling, L. C. and Michel, J.},
abstractNote = {InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2–5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104–3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ~0.5 Sun. Finally, the estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9–2.4 eV varies from 16.6% to 34.3%.},
doi = {10.1063/1.5018082},
journal = {Journal of Applied Physics},
number = 8,
volume = 123,
place = {United States},
year = {Mon Feb 26 00:00:00 EST 2018},
month = {Mon Feb 26 00:00:00 EST 2018}
}
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