Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain
Abstract
In this paper, we demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of 10-4, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy in situ provides a platform to study the role of anisotropy in phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.
- Authors:
-
- Princeton Univ., Princeton, NJ (United States). Dept. of Electrical Engineering
- Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
- Rhode Island College, Providence, RI (United States). Physical Sciences Dept.
- Publication Date:
- Research Org.:
- Princeton Univ., NJ (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1535312
- Alternate Identifier(s):
- OSTI ID: 1364449
- Grant/Contract Number:
- FG02-00-ER45841
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; physics
Citation Formats
Jo, Insun, Mueed, M. A., Pfeiffer, L. N., West, K. W., Baldwin, K. W., Winkler, R., Padmanabhan, Medini, and Shayegan, M. Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain. United States: N. p., 2017.
Web. doi:10.1063/1.4984954.
Jo, Insun, Mueed, M. A., Pfeiffer, L. N., West, K. W., Baldwin, K. W., Winkler, R., Padmanabhan, Medini, & Shayegan, M. Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain. United States. https://doi.org/10.1063/1.4984954
Jo, Insun, Mueed, M. A., Pfeiffer, L. N., West, K. W., Baldwin, K. W., Winkler, R., Padmanabhan, Medini, and Shayegan, M. Tue .
"Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain". United States. https://doi.org/10.1063/1.4984954. https://www.osti.gov/servlets/purl/1535312.
@article{osti_1535312,
title = {Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain},
author = {Jo, Insun and Mueed, M. A. and Pfeiffer, L. N. and West, K. W. and Baldwin, K. W. and Winkler, R. and Padmanabhan, Medini and Shayegan, M.},
abstractNote = {In this paper, we demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of 10-4, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy in situ provides a platform to study the role of anisotropy in phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.},
doi = {10.1063/1.4984954},
journal = {Applied Physics Letters},
number = 25,
volume = 110,
place = {United States},
year = {Tue Jun 20 00:00:00 EDT 2017},
month = {Tue Jun 20 00:00:00 EDT 2017}
}
Web of Science
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Works referencing / citing this record:
Interaction-dependent anisotropy of fractional quantum Hall states
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