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Title: Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Abstract

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. Here, we interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [2];  [1]; ORCiD logo [1]
  1. California Inst. of Technology (CalTech), Pasadena, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1530266
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 1; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Whitney, William S., Sherrott, Michelle C., Jariwala, Deep, Lin, Wei -Hsiang, Bechtel, Hans A., Rossman, George R., and Atwater, Harry A. Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus. United States: N. p., 2016. Web. doi:10.1021/acs.nanolett.6b03362.
Whitney, William S., Sherrott, Michelle C., Jariwala, Deep, Lin, Wei -Hsiang, Bechtel, Hans A., Rossman, George R., & Atwater, Harry A. Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus. United States. https://doi.org/10.1021/acs.nanolett.6b03362
Whitney, William S., Sherrott, Michelle C., Jariwala, Deep, Lin, Wei -Hsiang, Bechtel, Hans A., Rossman, George R., and Atwater, Harry A. Thu . "Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus". United States. https://doi.org/10.1021/acs.nanolett.6b03362. https://www.osti.gov/servlets/purl/1530266.
@article{osti_1530266,
title = {Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus},
author = {Whitney, William S. and Sherrott, Michelle C. and Jariwala, Deep and Lin, Wei -Hsiang and Bechtel, Hans A. and Rossman, George R. and Atwater, Harry A.},
abstractNote = {We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. Here, we interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.},
doi = {10.1021/acs.nanolett.6b03362},
journal = {Nano Letters},
number = 1,
volume = 17,
place = {United States},
year = {Thu Dec 22 00:00:00 EST 2016},
month = {Thu Dec 22 00:00:00 EST 2016}
}

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