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Title: Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Abstract

Requisite to growing stoichiometric perovskite thin films of the solid-solution A'1-xAxBO3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO3 and ABO3, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La1-xSrxVO3, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A'1-xAxBO3.

Authors:
 [1]; ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [2];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1530251
Alternate Identifier(s):
OSTI ID: 1321035
Grant/Contract Number:  
AC02-05CH11231; SC0012375
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Brahlek, Matthew, Zhang, Lei, Zhang, Hai-Tian, Lapano, Jason, Dedon, Liv R., Martin, Lane W., and Engel-Herbert, Roman. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4962388.
Brahlek, Matthew, Zhang, Lei, Zhang, Hai-Tian, Lapano, Jason, Dedon, Liv R., Martin, Lane W., & Engel-Herbert, Roman. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy. United States. https://doi.org/10.1063/1.4962388
Brahlek, Matthew, Zhang, Lei, Zhang, Hai-Tian, Lapano, Jason, Dedon, Liv R., Martin, Lane W., and Engel-Herbert, Roman. Wed . "Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy". United States. https://doi.org/10.1063/1.4962388. https://www.osti.gov/servlets/purl/1530251.
@article{osti_1530251,
title = {Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy},
author = {Brahlek, Matthew and Zhang, Lei and Zhang, Hai-Tian and Lapano, Jason and Dedon, Liv R. and Martin, Lane W. and Engel-Herbert, Roman},
abstractNote = {Requisite to growing stoichiometric perovskite thin films of the solid-solution A'1-xAxBO3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO3 and ABO3, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La1-xSrxVO3, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A'1-xAxBO3.},
doi = {10.1063/1.4962388},
journal = {Applied Physics Letters},
number = 10,
volume = 109,
place = {United States},
year = {Wed Sep 07 00:00:00 EDT 2016},
month = {Wed Sep 07 00:00:00 EDT 2016}
}

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Cited by: 21 works
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Figures / Tables:

FIG. 1. FIG. 1.: (a) 2θ-ω scans around the 002 LSAT substrate peak (2θ ≈ 46.9°) for La1-xSrxVO3 films with various compositions listed from top to bottom x = 0.00 (LaVO3), x = 0.30 (blue: V-deficient, black: stoichiometric, and red: V-rich growth conditions), x = 0.35, x = 0.65, x = 0.82,more » and x = 1.00 (SrVO3). (b) Out-of-plane lattice parameter versus PVTIP for La0.70Sr0.30VO3. (c) La0.70Sr0.30VO3 film thickness extracted from the Kiessig fringes in (a), versus PVTIP.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.