Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Radiation defect dynamics in 3 C -, 4 H -, and 6 H -SiC studied by pulsed ion beams

Abstract

Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 °C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.

Authors:
 [1];  [2];  [1]
+ Show Author Affiliations
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1529178
Report Number(s):
LLNL-JRNL-737622
Journal ID: ISSN 0168-583X; 890147
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Additional Journal Information:
Journal Volume: 435; Journal Issue: C; Journal ID: ISSN 0168-583X
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams. United States: N. p., 2018. Web. doi:10.1016/j.nimb.2018.03.026.
Copy to clipboard
Bayu Aji, L. B., Wallace, J. B., & Kucheyev, S. O. Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams. United States. https://doi.org/10.1016/j.nimb.2018.03.026
Copy to clipboard
Bayu Aji, L. B., Wallace, J. B., and Kucheyev, S. O. Wed . "Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams". United States. https://doi.org/10.1016/j.nimb.2018.03.026. https://www.osti.gov/servlets/purl/1529178.
Copy to clipboard
@article{osti_1529178,
title = {Radiation defect dynamics in 3C -, 4H -, and 6H -SiC studied by pulsed ion beams},
author = {Bayu Aji, L. B. and Wallace, J. B. and Kucheyev, S. O.},
abstractNote = {Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in 6H-SiC and damage buildup in 4H- and 6H-SiC irradiated at 100 °C with 500 keV Ar ions. These results are compared with previously reported data for Ar-ion-irradiated 3C- and 4H-SiC. We find that, for these irradiation conditions, damage buildup in 3C- and 6H-SiC is statistically indistinguishable and is significantly more efficient than in 4H-SiC. Within a stimulated amorphization model, 4H-SiC is described by a reduced amorphization cross-section constant, while the point defect cluster production cross-section is the same (within experimental errors) for the three polytypes studied. Moreover, 4H-SiC exhibits slower defect relaxation dynamics than 3C- and 6H-SiC. These results clearly demonstrate the importance of the lattice structure in damage buildup and defect interaction dynamics in SiC.},
doi = {10.1016/j.nimb.2018.03.026},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
number = C,
volume = 435,
place = {United States},
year = {Wed Mar 28 00:00:00 EDT 2018},
month = {Wed Mar 28 00:00:00 EDT 2018}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1016/j.nimb.2018.03.026
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Figures / Tables:

FIG. 1 FIG. 1: Selected depth profiles of relative disorder in (a) 3C-, (b) 4H-, and (c) 6H-SiC irradiated at 100 °C with a pulsed beam of 500 keV Ar ions with Fon = 1.9× 1013 cm−2 s−1, ton = 1 ms, and different toff values given in the legends (in unitsmore » of ms). The total fluences used are also shown in the legends. For clarity, only every 10th experimental point is depicted. The vertical dashed line shows the position of the maximum of the nuclear energy loss profile of Ar ions.« less
All figures and tables (3 total)
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Handbook of SiC properties for fuel performance modeling
journal, September 2007

Irradiation-induced amorphization in β-SiC
journal, March 1998

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
journal, December 2003

  • Kuznetsov, A. Yu.; Wong-Leung, J.; Hallén, A.
  • Journal of Applied Physics, Vol. 94, Issue 11
  • DOI: 10.1063/1.1622797

Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC
journal, April 2004

  • Zhang, Y.; Weber, W. J.; Jiang, W.
  • Journal of Applied Physics, Vol. 95, Issue 8
  • DOI: 10.1063/1.1666974

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC
journal, October 2010

  • Wendler, E.; Bierschenk, Th.; Wesch, W.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 19
  • DOI: 10.1016/j.nimb.2010.05.026

Characterization and modelling of the ion-irradiation induced disorder in 6H-SiC and 3C-SiC single crystals
journal, October 2010

Damage buildup in Ar-ion-irradiated 3 C -SiC at elevated temperatures
journal, September 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Li, T. T.
  • Journal of Applied Physics, Vol. 118, Issue 10
  • DOI: 10.1063/1.4929953

Time constant of defect relaxation in ion-irradiated 3C-SiC
journal, May 2015

  • Wallace, J. B.; Bayu Aji, L. B.; Shao, L.
  • Applied Physics Letters, Vol. 106, Issue 20
  • DOI: 10.1063/1.4921471

Non-monotonic temperature dependence of radiation defect dynamics in silicon carbide
journal, August 2016

  • Bayu Aji, L. B.; Wallace, J. B.; Shao, L.
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep30931

Effects of collision cascade density on radiation defect dynamics in 3C-SiC
journal, March 2017

  • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
  • Scientific Reports, Vol. 7, Issue 1
  • DOI: 10.1038/srep44703

Dose-rate dependence of damage buildup in 3 C -SiC
journal, June 2017

  • Bayu Aji, L. B.; Li, T. T.; Wallace, J. B.
  • Journal of Applied Physics, Vol. 121, Issue 23
  • DOI: 10.1063/1.4986631

Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si
journal, August 2012

Some new aspects for the evaluation of disorder profiles in silicon by backscattering
journal, January 1973

SRIM – The stopping and range of ions in matter (2010)
journal, June 2010

  • Ziegler, James F.; Ziegler, M. D.; Biersack, J. P.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12
  • DOI: 10.1016/j.nimb.2010.02.091

A method for the solution of certain non-linear problems in least squares
journal, January 1944

  • Levenberg, Kenneth
  • Quarterly of Applied Mathematics, Vol. 2, Issue 2
  • DOI: 10.1090/qam/10666

Radiation defect dynamics in Si at room temperature studied by pulsed ion beams
journal, October 2015

  • Wallace, J. B.; Charnvanichborikarn, S.; Bayu Aji, L. B.
  • Journal of Applied Physics, Vol. 118, Issue 13
  • DOI: 10.1063/1.4932209
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    Radiation defect dynamics in SiC with pre-existing defects
    journal, June 2019

    • Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.
    • Journal of Applied Physics, Vol. 125, Issue 23
    • DOI: 10.1063/1.5093640
      Sort by:
      [ × clear filter / sort ]

      Figures / Tables found in this record:

      FIG. 1 (p. 4)figure
      FIG. 2 (p. 4)figure
      FIG. 3 (p. 4)figure
        [ × clear filter / sort ]
        Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

        Similar Records in DOE PAGES and OSTI.GOV collections: