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Title: A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices

Abstract

Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy demonstrates a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [4];  [2]; ORCiD logo [1]
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  1. Delft Univ. of Technology (Netherlands)
  2. Purdue Univ., West Lafayette, IN (United States)
  3. Swiss Federal Inst. of Technology (ETH), Zurich (Switzerland)
  4. Solid State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
Publication Date:
Research Org.:
Purdue Univ., West Lafayette, IN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); Netherlands Organization of Scientific Research (NWO)
OSTI Identifier:
1527168
Alternate Identifier(s):
OSTI ID: 1474208
Grant/Contract Number:  
SC0006671
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., and Vandersypen, L. M. K. A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices. United States: N. p., 2018. Web. doi:10.1063/1.5046796.
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Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., & Vandersypen, L. M. K. A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices. United States. https://doi.org/10.1063/1.5046796
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Hensgens, T., Mukhopadhyay, U., Barthelemy, P., Vermeulen, R. F. L., Schouten, R. N., Fallahi, S., Gardner, G. C., Reichl, C., Wegscheider, W., Manfra, M. J., and Vandersypen, L. M. K. Thu . "A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices". United States. https://doi.org/10.1063/1.5046796. https://www.osti.gov/servlets/purl/1527168.
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@article{osti_1527168,
title = {A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices},
author = {Hensgens, T. and Mukhopadhyay, U. and Barthelemy, P. and Vermeulen, R. F. L. and Schouten, R. N. and Fallahi, S. and Gardner, G. C. and Reichl, C. and Wegscheider, W. and Manfra, M. J. and Vandersypen, L. M. K.},
abstractNote = {Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Capacitance spectroscopy demonstrates a technique that allows one to directly probe the density of states of such two-dimensional electron systems. Here, we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics},
doi = {10.1063/1.5046796},
journal = {Journal of Applied Physics},
number = 12,
volume = 124,
place = {United States},
year = {Thu Sep 27 00:00:00 EDT 2018},
month = {Thu Sep 27 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5046796
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Figures / Tables:

FIG. 1 FIG. 1: (a) Schematic diagram showing the various layers of the samples with a single global gate. (b) Bridge set-up for equilibrium capacitance measurements, where sinusoidal signals are applied by a waveform generator (WG) on both the sample back gate and on a reference capacitor of 45 pF. The relativemore » amplitude and phase difference between these two signals are adjusted to maintain a constant zero voltage at the bridge point (red dot), which is amplified in different stages and read out using a lock-in amplifier. The bridge point is connected to the grid gate when there is a grid gate present, and to the top gate otherwise. [(c) and (d)] Schematic diagrams of two different two-layer gate geometries, designed to impose a periodic potential on the 2DEG, comprising either of a deposited dielectric (c) or a dielectric obtained by oxidation of the first metallic layer (d). Dielectric spacer is depicted in red. The other colors are as in panel (a).« less
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    Interaction-driven plateau transition between integer and fractional Chern Insulators
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