Noble gas ion beams in materials science for future applications and devices
Abstract
Helium ion microscopy (HIM), enabled by a gas field ion source (GFIS), is an emerging imaging and nanofabrication technique compatible with many applications in materials science. The scanning electron microscope (SEM) has become ubiquitous in materials science for high-resolution imaging of materials. However, due to the fundamental limitation in focusing of electron beams, ion-beam microscopy is now being developed (e.g., at 20 kV the SEM beam diameter ranges from 0.5 to 1 nm, whereas the HIM offers 0.35 nm). The key technological advantage of the HIM is in its multipurpose design that excels in a variety of disciplines. The HIM offers higher resolution than the best available SEMs as well as the traditional gallium liquid-metal ion source (LMISs) focused ion beams (FIBs), and is capable of imaging untreated biological or other insulating samples with unprecedented resolution, depth of field, materials contrast, and image quality. GFIS FIBs also offer a direct path to defect engineering via ion implantation, three-dimensional direct write using gaseous and liquid precursors, and chemical-imaging options with secondary ion mass spectrometry. HIM covers a wide range of tasks that otherwise would require multiple tools or specialized sample preparation. In this paper, we describe the underlying technology, present materials,more »
- Authors:
-
[1];
[1];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Intel Corp., Santa Clara, CA (United States)
- Helmholtz-Zentrum Dresden-Rossendorf (Germany)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1524875
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- MRS Bulletin
- Additional Journal Information:
- Journal Volume: 42; Journal Issue: 09; Journal ID: ISSN 0883-7694
- Publisher:
- Materials Research Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; Helium Ion Microscopy; Nanofabrication; defect engineering; 2D materials; Focused Ion Beam Induced Deposition
Citation Formats
Belianinov, Alex, Burch, Matthew J., Kim, Songkil, Tan, Shida, Hlawacek, Gregor, and Ovchinnikova, Olga S. Noble gas ion beams in materials science for future applications and devices. United States: N. p., 2017.
Web. doi:10.1557/mrs.2017.185.
Belianinov, Alex, Burch, Matthew J., Kim, Songkil, Tan, Shida, Hlawacek, Gregor, & Ovchinnikova, Olga S. Noble gas ion beams in materials science for future applications and devices. United States. https://doi.org/10.1557/mrs.2017.185
Belianinov, Alex, Burch, Matthew J., Kim, Songkil, Tan, Shida, Hlawacek, Gregor, and Ovchinnikova, Olga S. Fri .
"Noble gas ion beams in materials science for future applications and devices". United States. https://doi.org/10.1557/mrs.2017.185. https://www.osti.gov/servlets/purl/1524875.
@article{osti_1524875,
title = {Noble gas ion beams in materials science for future applications and devices},
author = {Belianinov, Alex and Burch, Matthew J. and Kim, Songkil and Tan, Shida and Hlawacek, Gregor and Ovchinnikova, Olga S.},
abstractNote = {Helium ion microscopy (HIM), enabled by a gas field ion source (GFIS), is an emerging imaging and nanofabrication technique compatible with many applications in materials science. The scanning electron microscope (SEM) has become ubiquitous in materials science for high-resolution imaging of materials. However, due to the fundamental limitation in focusing of electron beams, ion-beam microscopy is now being developed (e.g., at 20 kV the SEM beam diameter ranges from 0.5 to 1 nm, whereas the HIM offers 0.35 nm). The key technological advantage of the HIM is in its multipurpose design that excels in a variety of disciplines. The HIM offers higher resolution than the best available SEMs as well as the traditional gallium liquid-metal ion source (LMISs) focused ion beams (FIBs), and is capable of imaging untreated biological or other insulating samples with unprecedented resolution, depth of field, materials contrast, and image quality. GFIS FIBs also offer a direct path to defect engineering via ion implantation, three-dimensional direct write using gaseous and liquid precursors, and chemical-imaging options with secondary ion mass spectrometry. HIM covers a wide range of tasks that otherwise would require multiple tools or specialized sample preparation. In this paper, we describe the underlying technology, present materials, relevant applications, and offer an outlook for the potential of FIB technology in processing materials.},
doi = {10.1557/mrs.2017.185},
journal = {MRS Bulletin},
number = 09,
volume = 42,
place = {United States},
year = {Fri Sep 08 00:00:00 EDT 2017},
month = {Fri Sep 08 00:00:00 EDT 2017}
}
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Figures / Tables:
Figure 1: Helium ion microscope (HIM) overview. (a) Simplified cross-sectional diagram of a Zeiss ORION HIM identifying key components. (b) Comparison of electron-generated secondary electrons (eSEs) with ion-generated secondary electrons (iSEs), and electron-generated secondary electrons (SE2) for silicon in the energy range below 50 eV. The eSE signal also containsmore »
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