Title: Nonvolatile voltage controlled molecular spin state switching

Abstract

© 2019 Author(s). Voltage-controlled room temperature isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films is demonstrated. This isothermal switching is evident in thin film bilayer structures where the molecular spin crossover film is adjacent to a molecular ferroelectric. The adjacent molecular ferroelectric, either polyvinylidene fluoride hexafluoropropylene or croconic acid (C 5 H 2 O 5 ), appears to lock the spin crossover [Fe{H 2 B(pz) 2 } 2 (bipy)] molecular complex largely in the low or high spin state depending on the direction of ferroelectric polarization. In both a planar two terminal diode structure and a transistor structure, the voltage controlled isothermal reversible spin crossover switching of [Fe{H 2 B(pz) 2 } 2 (bipy)] is accompanied by a resistance change and is seen to be nonvolatile, i.e., retained in the absence of an applied electric field. The result appears general, as the voltage controlled nonvolatile switching can be made to work with two different molecular ferroelectrics: croconic acid and polyvinylidene fluoride hexafluoropropylene.

Authors:

Hao, G.  ^[1];

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• Search DOE PAGES for ORCID "0000-0003-3281-6816"

Mosey, A. ^[2]; Jiang, X. ^[1]; Yost, A. J.  ^[1];

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• Search DOE PAGES for ORCID "0000-0002-6220-7520"

Sapkota, K. R. ^[3]; Wang, G. T.  ^[3];

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• Search DOE PAGES for ORCID "0000-0001-9007-0173"

Zhang, X.  ^[4];

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• Search DOE PAGES for ORCID "0000-0001-9318-8839"

Zhang, J.  ^[4];

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• Search DOE PAGES for ORCID "0000-0003-0274-0814"

N'Diaye, A. T.  ^[5];

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• Search DOE PAGES for ORCID "0000-0001-9429-9776"

Cheng, R. ^[2]; Xu, X.  ^[1];

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• Search DOE PAGES for ORCID "0000-0002-4363-392X"

Dowben, P. A.  ^[1]

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• Search DOE PAGES for ORCID "0000-0002-2198-4710"

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+ Show Author Affiliations

1. Univ. of Nebraska, Lincoln, NE (United States)
2. Indiana Univ. Purdue Univ.-Indianapolis, Indianapolis, IN (United States)
3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
4. Univ. of Nebraska–Lincoln, Lincoln, NE (United States)
5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:

Tue Jan 22 00:00:00 EST 2019

Research Org.:

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Org.:

USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

OSTI Identifier:

1524643

Alternate Identifier(s):

OSTI ID: 1635171

Report Number(s):

SAND-2019-5955J
Journal ID: ISSN 0003-6951; 675880

Grant/Contract Number:  

AC04-94AL85000; AC02-05CH11231; NA0003525; 1565692; DMR-1420645

Resource Type:

Accepted Manuscript

Journal Name:

Applied Physics Letters

Additional Journal Information:

Journal Volume: 114; Journal Issue: 3; Journal ID: ISSN 0003-6951

Publisher:

American Institute of Physics (AIP)

Country of Publication:

United States

Language:

English

Subject:

74 ATOMIC AND MOLECULAR PHYSICS; ferroelectric materials; multiferroics; spintronic devices; multilayers; x-ray absorption spectroscopy; organic semiconductors; thin films; interfaces; polymers