Interplay of orbital effects and nanoscale strain in topological crystalline insulators
Abstract
Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have been implicated in generating novel electronic and structural phases. Here we show how the orbital nature of bands can result in non-trivial effects of strain on band structure. We use scanning–tunneling microscopy to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. By studying the effects of uniaxial strain on the band structure we find a surprising effect where strain applied in one direction has the most pronounced influence on the band structure along the perpendicular direction. Our theoretical calculations indicate that this effect arises from the orbital nature of the conduction and valence bands. Our results imply that a microscopic model capturing strain effects must include a consideration of the orbital nature of bands.
- Authors:
-
[1];
[4];
[5];
- Boston College, Chestnut Hill, MA (United States). Dept. of Physics; National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
- Boston College, Chestnut Hill, MA (United States). Dept. of Physics; PSL Research Univ., Paris (France)
- Boston College, Chestnut Hill, MA (United States). Dept. of Physics; Univ. of Illinois Urban-Champaign, Urbana, IL (United States). Dept. of Physics and Frederick Seitz Materials Research Lab. (FS-MRL)
- National Taiwan Univ., Taipei (Taiwan). Center for Condensed Matter Sciences
- National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research Centre
- National University of Singapore (Singapore). Dept. of Physics
- Boston College, Chestnut Hill, MA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1523402
- Grant/Contract Number:
- SC0014335
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Walkup, Daniel, Assaf, Badih A., Scipioni, Kane L., Sankar, R., Chou, Fangcheng, Chang, Guoqing, Lin, Hsin, Zeljkovic, Ilija, and Madhavan, Vidya. Interplay of orbital effects and nanoscale strain in topological crystalline insulators. United States: N. p., 2018.
Web. doi:10.1038/s41467-018-03887-5.
Walkup, Daniel, Assaf, Badih A., Scipioni, Kane L., Sankar, R., Chou, Fangcheng, Chang, Guoqing, Lin, Hsin, Zeljkovic, Ilija, & Madhavan, Vidya. Interplay of orbital effects and nanoscale strain in topological crystalline insulators. United States. https://doi.org/10.1038/s41467-018-03887-5
Walkup, Daniel, Assaf, Badih A., Scipioni, Kane L., Sankar, R., Chou, Fangcheng, Chang, Guoqing, Lin, Hsin, Zeljkovic, Ilija, and Madhavan, Vidya. Thu .
"Interplay of orbital effects and nanoscale strain in topological crystalline insulators". United States. https://doi.org/10.1038/s41467-018-03887-5. https://www.osti.gov/servlets/purl/1523402.
@article{osti_1523402,
title = {Interplay of orbital effects and nanoscale strain in topological crystalline insulators},
author = {Walkup, Daniel and Assaf, Badih A. and Scipioni, Kane L. and Sankar, R. and Chou, Fangcheng and Chang, Guoqing and Lin, Hsin and Zeljkovic, Ilija and Madhavan, Vidya},
abstractNote = {Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have been implicated in generating novel electronic and structural phases. Here we show how the orbital nature of bands can result in non-trivial effects of strain on band structure. We use scanning–tunneling microscopy to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. By studying the effects of uniaxial strain on the band structure we find a surprising effect where strain applied in one direction has the most pronounced influence on the band structure along the perpendicular direction. Our theoretical calculations indicate that this effect arises from the orbital nature of the conduction and valence bands. Our results imply that a microscopic model capturing strain effects must include a consideration of the orbital nature of bands.},
doi = {10.1038/s41467-018-03887-5},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Thu Apr 19 00:00:00 EDT 2018},
month = {Thu Apr 19 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
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