DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study [High-frequency high power performance of AlGaN channel HEMTs: an RF simulation study]

Abstract

The emerging Al-rich AlGaN-channel AlxGa1–xN/AlyGa1–y N high-electron-mobility transistors (HEMTs) with 0.7 ≤ y < x ≤ 1.0 have the potential to greatly exceed the power handling capabilities of today's GaN HEMTs, possibly by five times. This projection is based on the expected 4× enhancement of the critical electric field, the 2× enhancement of sheet carrier density, and the parity of the electron saturation velocity for Al-rich AlGaN-channel HEMTs relative to GaN-channel HEMTs. In this paper, the expected increased RF power density in Al-rich AlGaN-channel HEMTs is calculated by theoretical analysis and computer simulations, based on existing data on long-channel AlGaN devices. It is shown that a saturated power density of 18 W mm–1, a power-added efficiency of 55% and an output third-order intercept point over 40 dB can be achieved for this technology. Furthermore, the method for large-signal RF performance estimation presented in this paper is generic and can be applied to other novel high-power device technologies at the early stages of development.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1515222
Report Number(s):
SAND-2018-13883J
Journal ID: ISSN 0021-4922; 670727
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 58; Journal Issue: SC; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., and Kaplar, Robert J. High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study [High-frequency high power performance of AlGaN channel HEMTs: an RF simulation study]. United States: N. p., 2019. Web. doi:10.7567/1347-4065/ab07a5.
Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., & Kaplar, Robert J. High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study [High-frequency high power performance of AlGaN channel HEMTs: an RF simulation study]. United States. https://doi.org/10.7567/1347-4065/ab07a5
Reza, Shahed, Klein, Brianna A., Baca, Albert. G., Armstrong, Andrew M., Allerman, Andrew A., Douglas, Erica. A., and Kaplar, Robert J. Tue . "High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study [High-frequency high power performance of AlGaN channel HEMTs: an RF simulation study]". United States. https://doi.org/10.7567/1347-4065/ab07a5. https://www.osti.gov/servlets/purl/1515222.
@article{osti_1515222,
title = {High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study [High-frequency high power performance of AlGaN channel HEMTs: an RF simulation study]},
author = {Reza, Shahed and Klein, Brianna A. and Baca, Albert. G. and Armstrong, Andrew M. and Allerman, Andrew A. and Douglas, Erica. A. and Kaplar, Robert J.},
abstractNote = {The emerging Al-rich AlGaN-channel AlxGa1–xN/AlyGa1–y N high-electron-mobility transistors (HEMTs) with 0.7 ≤ y < x ≤ 1.0 have the potential to greatly exceed the power handling capabilities of today's GaN HEMTs, possibly by five times. This projection is based on the expected 4× enhancement of the critical electric field, the 2× enhancement of sheet carrier density, and the parity of the electron saturation velocity for Al-rich AlGaN-channel HEMTs relative to GaN-channel HEMTs. In this paper, the expected increased RF power density in Al-rich AlGaN-channel HEMTs is calculated by theoretical analysis and computer simulations, based on existing data on long-channel AlGaN devices. It is shown that a saturated power density of 18 W mm–1, a power-added efficiency of 55% and an output third-order intercept point over 40 dB can be achieved for this technology. Furthermore, the method for large-signal RF performance estimation presented in this paper is generic and can be applied to other novel high-power device technologies at the early stages of development.},
doi = {10.7567/1347-4065/ab07a5},
journal = {Japanese Journal of Applied Physics},
number = SC,
volume = 58,
place = {United States},
year = {Tue Apr 16 00:00:00 EDT 2019},
month = {Tue Apr 16 00:00:00 EDT 2019}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

Save / Share: