SnO2-Catalyzed Oxidation in High-Efficiency CdTe Solar Cells
Abstract
Interfaces at the front of superstrate CdTe-based solar cells are critical to carrier transport, recombination, and device performance, yet determination of the chemical structure of these nanoscale regions has remained elusive. This is partly due to changes that occur at the front interfaces during high temperature growth and substantive changes occurring during postdeposition processing. In addition, these buried interfaces are extremely difficult to access in a way that preserves chemical information. In this work, we use a recently developed thermomechanical cleaving technique paired with X-ray photoelectron spectroscopy to probe oxidation states at the SnO2 interface of CdTe solar cells. We show that the tin oxide front electrode promotes the formation of nanometer-scale oxides of tellurium and sulfur. Most oxidation occurs during CdCl2/O2 activation. Surprisingly, we show that relatively low-temperature anneals (180-260 degrees C) used to diffuse and activate copper acceptors in a doping/back contact process also cause significant changes in oxidation at the front of the cell, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. Device performance is shown to correlate with the extent of tellurium and sulfur oxidation within this nanometer-scale region. Mechanisms responsible for these beneficial effects are proposed.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1513192
- Report Number(s):
- NREL/JA-5K00-73453
Journal ID: ISSN 1944-8244
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 13; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; cadmium telluride; interfaces; passivation; photovoltaics; solar cells; tin oxide; X-ray photoelectron spectroscopy
Citation Formats
Perkins, Craig, McGott, Deborah L, Reese, Matthew O, and Metzger, Wyatt K. SnO2-Catalyzed Oxidation in High-Efficiency CdTe Solar Cells. United States: N. p., 2019.
Web. doi:10.1021/acsami.9b00835.
Perkins, Craig, McGott, Deborah L, Reese, Matthew O, & Metzger, Wyatt K. SnO2-Catalyzed Oxidation in High-Efficiency CdTe Solar Cells. United States. https://doi.org/10.1021/acsami.9b00835
Perkins, Craig, McGott, Deborah L, Reese, Matthew O, and Metzger, Wyatt K. Fri .
"SnO2-Catalyzed Oxidation in High-Efficiency CdTe Solar Cells". United States. https://doi.org/10.1021/acsami.9b00835. https://www.osti.gov/servlets/purl/1513192.
@article{osti_1513192,
title = {SnO2-Catalyzed Oxidation in High-Efficiency CdTe Solar Cells},
author = {Perkins, Craig and McGott, Deborah L and Reese, Matthew O and Metzger, Wyatt K},
abstractNote = {Interfaces at the front of superstrate CdTe-based solar cells are critical to carrier transport, recombination, and device performance, yet determination of the chemical structure of these nanoscale regions has remained elusive. This is partly due to changes that occur at the front interfaces during high temperature growth and substantive changes occurring during postdeposition processing. In addition, these buried interfaces are extremely difficult to access in a way that preserves chemical information. In this work, we use a recently developed thermomechanical cleaving technique paired with X-ray photoelectron spectroscopy to probe oxidation states at the SnO2 interface of CdTe solar cells. We show that the tin oxide front electrode promotes the formation of nanometer-scale oxides of tellurium and sulfur. Most oxidation occurs during CdCl2/O2 activation. Surprisingly, we show that relatively low-temperature anneals (180-260 degrees C) used to diffuse and activate copper acceptors in a doping/back contact process also cause significant changes in oxidation at the front of the cell, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. Device performance is shown to correlate with the extent of tellurium and sulfur oxidation within this nanometer-scale region. Mechanisms responsible for these beneficial effects are proposed.},
doi = {10.1021/acsami.9b00835},
journal = {ACS Applied Materials and Interfaces},
number = 13,
volume = 11,
place = {United States},
year = {Fri Mar 08 00:00:00 EST 2019},
month = {Fri Mar 08 00:00:00 EST 2019}
}
Web of Science