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Title: Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride

Abstract

Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/– 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/– 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl4 as precursors.

Authors:
 [1];  [2];  [2];  [3];  [2]; ORCiD logo [2]
+ Show Author Affiliations
  1. Pennsylvania State Univ., University Park, PA (United States); Michigan Technological Univ., Houghton, MI (United States)
  2. Pennsylvania State Univ., University Park, PA (United States)
  3. Pennsylvania State Univ., University Park, PA (United States); Univ. of Florida, Gainesville, FL (United States)
Publication Date:
Research Org.:
Pennsylvania State Univ., University Park, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1511167
Alternate Identifier(s):
OSTI ID: 1413564
Grant/Contract Number:  
EE0005323; FG36-08GO18010
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 23; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Kendrick, Chito, Kuo, Meng -Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., and Redwing, Joan M. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride. United States: N. p., 2017. Web. doi:10.1063/1.4993632.
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Kendrick, Chito, Kuo, Meng -Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., & Redwing, Joan M. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride. United States. https://doi.org/10.1063/1.4993632
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Kendrick, Chito, Kuo, Meng -Wei, Li, Jie, Shen, Haoting, Mayer, Theresa S., and Redwing, Joan M. Fri . "Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride". United States. https://doi.org/10.1063/1.4993632. https://www.osti.gov/servlets/purl/1511167.
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@article{osti_1511167,
title = {Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride},
author = {Kendrick, Chito and Kuo, Meng -Wei and Li, Jie and Shen, Haoting and Mayer, Theresa S. and Redwing, Joan M.},
abstractNote = {Boron-doped silicon nanowires (SiNWs) grown by the vapor-liquid-solid growth mechanism using silicon tetrachloride (SiCl4) as the silicon precursor and trimethylboron (TMB) as the boron source were studied to understand the axial and radial doping uniformity. TMB-doped SiNWs with diameters up to 400 nm and lengths > 7.5 μm were integrated into a global back-gated test structure with multiple electrodes for electrical characterization. From gate modulated measurements, the SiNWs were confirmed to be heavily doped p-type. Multiple four point resistivity measurements across a total length of 7.5 μm were taken on as-grown SiNWs. Resistivity, corrected for surface charge, was determined to be 0.01 +/– 0.002 Ω cm along the entire length of the as-grown boron doped SiNWs. This was also observed in the axial direction for etched SiNWs, with corrected resistivity of 0.01 +/– 0.003 Ω cm, therefore confirming the uniform p-type doping of SiNWs using TMB and SiCl4 as precursors.},
doi = {10.1063/1.4993632},
journal = {Journal of Applied Physics},
number = 23,
volume = 122,
place = {United States},
year = {Fri Dec 15 00:00:00 EST 2017},
month = {Fri Dec 15 00:00:00 EST 2017}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.4993632
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Cited by: 6 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) Cross section SEM micrograph of the p-doped Si nanowires. TEM micrographs of (b) tip and (c) base segment of an as-grown TMB-doped Si nanowire grown using SiCl4. Both images reveal a single crystal Si core surrounded by a ~1 nm thick native oxide shell. Diffraction pattern (inset)more » confirms that the orientation of as-grown nanowire is [111].« less
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