Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals
Abstract
Abstract To explore new constituents in two‐dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low‐temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 ‐based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast‐transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching.more »
- Authors:
-
more »
- Nanjing Tech Univ., Nanjing (China). Key Lab. of Flexible Electronics (KLOFE) & Inst. of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
- Nanjing Tech Univ., Nanjing (China). Key Lab. of Flexible Electronics (KLOFE) & Inst. of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
- Univ. of Southern California, Los Angeles, CA (United States). Ming Hsieh Dept. of Electrical Engineering
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Peking Univ., Beijing (China). School of Physics, State Key Lab. for Mesoscopic Physics
- Nanjing Univ. (China). National Lab. of Solid State Microstructures, School of Physics
- Nanjing Tech Univ., Nanjing (China). School of Materials Science and Engineering, Center for Programmable Materials
- Sun Yat-sen Univ., Guangzhou (China). School of Materials Science and Engineering
- Nanjing Univ. (China). National Lab. of Solid-State Microstructures, School of Electronic Science and Engineering Collaborative, Innovation Center of Advanced Microstructures
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development (LDRD) Program
- OSTI Identifier:
- 1505975
- Alternate Identifier(s):
- OSTI ID: 1499077
- Report Number(s):
- LA-UR-18-31375
Journal ID: ISSN 0935-9648
- Grant/Contract Number:
- 89233218CNA000001
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Volume: 31; Journal Issue: 17; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Material Science
Citation Formats
Sun, Yan, Zhou, Zishu, Huang, Zhen, Wu, Jiangbin, Zhou, Liujiang, Cheng, Yang, Liu, Jinqiu, Zhu, Chao, Yu, Maotao, Yu, Peng, Zhu, Wei, Liu, Yue, Zhou, Jian, Liu, Bowen, Xie, Hongguang, Cao, Yi, Li, Hai, Wang, Xinran, Liu, Kaihui, Wang, Xiaoyong, Wang, Jianpu, Wang, Lin, and Huang, Wei. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. United States: N. p., 2019.
Web. doi:10.1002/adma.201806562.
Sun, Yan, Zhou, Zishu, Huang, Zhen, Wu, Jiangbin, Zhou, Liujiang, Cheng, Yang, Liu, Jinqiu, Zhu, Chao, Yu, Maotao, Yu, Peng, Zhu, Wei, Liu, Yue, Zhou, Jian, Liu, Bowen, Xie, Hongguang, Cao, Yi, Li, Hai, Wang, Xinran, Liu, Kaihui, Wang, Xiaoyong, Wang, Jianpu, Wang, Lin, & Huang, Wei. Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals. United States. https://doi.org/10.1002/adma.201806562
Sun, Yan, Zhou, Zishu, Huang, Zhen, Wu, Jiangbin, Zhou, Liujiang, Cheng, Yang, Liu, Jinqiu, Zhu, Chao, Yu, Maotao, Yu, Peng, Zhu, Wei, Liu, Yue, Zhou, Jian, Liu, Bowen, Xie, Hongguang, Cao, Yi, Li, Hai, Wang, Xinran, Liu, Kaihui, Wang, Xiaoyong, Wang, Jianpu, Wang, Lin, and Huang, Wei. Tue .
"Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals". United States. https://doi.org/10.1002/adma.201806562. https://www.osti.gov/servlets/purl/1505975.
@article{osti_1505975,
title = {Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals},
author = {Sun, Yan and Zhou, Zishu and Huang, Zhen and Wu, Jiangbin and Zhou, Liujiang and Cheng, Yang and Liu, Jinqiu and Zhu, Chao and Yu, Maotao and Yu, Peng and Zhu, Wei and Liu, Yue and Zhou, Jian and Liu, Bowen and Xie, Hongguang and Cao, Yi and Li, Hai and Wang, Xinran and Liu, Kaihui and Wang, Xiaoyong and Wang, Jianpu and Wang, Lin and Huang, Wei},
abstractNote = {Abstract To explore new constituents in two‐dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface‐based devices. Herein, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low‐temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 ‐based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI 2 stacks, where fast‐transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.},
doi = {10.1002/adma.201806562},
journal = {Advanced Materials},
number = 17,
volume = 31,
place = {United States},
year = {Tue Mar 12 00:00:00 EDT 2019},
month = {Tue Mar 12 00:00:00 EDT 2019}
}
Web of Science
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