Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates

Fu, Houqiang; Zhang, Xiaodong; Fu, Kai; Liu, Hanxiao; Alugubelli, Shanthan R.; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Yang, Tsung-Han; Xu, Ke; Ponce, Fernando A.; Zhang, Baoshun; Zhao, Yuji

doi:10.7567/APEX.11.111003

Title: Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $$(10\bar{1}0)$$ m -plane GaN substrates

Abstract

We report nonpolar vertical GaN-on-GaN p–n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ∙cm², and high on/off ratio of 10¹⁰. The reverse current leakage was described by a trap-assisted space-charge- limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. Finally, these results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

Authors:

Fu, Houqiang ^[1]; Zhang, Xiaodong ^[2]; Fu, Kai ^[1]; Liu, Hanxiao ^[3]; Alugubelli, Shanthan R. ^[3]; Huang, Xuanqi ^[1]; Chen, Hong ^[1]; Baranowski, Izak ^[1]; Yang, Tsung-Han ^[1]; Xu, Ke ^[4]; Ponce, Fernando A. ^[3]; Zhang, Baoshun ^[2]; Zhao, Yuji ^[1]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer, and Energy Engineering
Chinese Academy of Sciences (CAS), CAS, Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nanotech and Nanobionics
Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
Chinese Academy of Sciences (CAS), CAS, Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nanotech and Nanobionics; Suzhou Nanowin Science and Technology Co., Suzhou (China)

Publication Date:: Tue Oct 16 00:00:00 EDT 2018

Research Org.:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1505567

Grant/Contract Number:: AR0000868

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Express

Additional Journal Information:: Journal Volume: 11; Journal Issue: 11; Journal ID: ISSN 1882-0778

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 36 MATERIALS SCIENCE

Citation Formats


                    Fu, Houqiang, Zhang, Xiaodong, Fu, Kai, Liu, Hanxiao, Alugubelli, Shanthan R., Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Xu, Ke, Ponce, Fernando A., Zhang, Baoshun, and Zhao, Yuji. Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates.  United States: N. p., 2018. 
Web.  doi:10.7567/APEX.11.111003.

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                    Fu, Houqiang, Zhang, Xiaodong, Fu, Kai, Liu, Hanxiao, Alugubelli, Shanthan R., Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Xu, Ke, Ponce, Fernando A., Zhang, Baoshun, & Zhao, Yuji. Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates.  United States.  https://doi.org/10.7567/APEX.11.111003

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                    Fu, Houqiang, Zhang, Xiaodong, Fu, Kai, Liu, Hanxiao, Alugubelli, Shanthan R., Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Yang, Tsung-Han, Xu, Ke, Ponce, Fernando A., Zhang, Baoshun, and Zhao, Yuji. Tue .  
"Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates".  United States.  https://doi.org/10.7567/APEX.11.111003.  https://www.osti.gov/servlets/purl/1505567.

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@article{osti_1505567,

  title        = {Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m -plane GaN substrates},

  author       = {Fu, Houqiang and Zhang, Xiaodong and Fu, Kai and Liu, Hanxiao and Alugubelli, Shanthan R. and Huang, Xuanqi and Chen, Hong and Baranowski, Izak and Yang, Tsung-Han and Xu, Ke and Ponce, Fernando A. and Zhang, Baoshun and Zhao, Yuji},

  abstractNote = {We report nonpolar vertical GaN-on-GaN p–n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ∙cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge- limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. Finally, these results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.},

  doi          = {10.7567/APEX.11.111003},

  journal      = {Applied Physics Express},

  number       = 11,

  volume       = 11,

  place        = {United States},

  year         = {Tue Oct 16 00:00:00 EDT 2018},

  month        = {Tue Oct 16 00:00:00 EDT 2018}

}

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Journal Article:

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https://doi.org/10.7567/APEX.11.111003

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Cited by: 15 works

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Figure 1: (a) Polar $\mathcal{c}$-plane and (b) nonpolar $\mathcal{m}$-plane in the GaN wurtzite crystal unit cell. (d) Atomic arrangements of $\mathcal{c}$-plane and $\mathcal{m}$-plane. (c) Schematics of selectively doped p-n junctions. During the fabrication of vertical $\mathrm{JFETs}$ $\mathrm{JBS}$ and $\mathrm{SJs}$, the nonpolar surface will be exposed, and a nonpolar p-n junctionmore »

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Works referencing / citing this record:

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes
journal, December 2019

Aragon, Andrew; Monavarian, Morteza; Stricklin, Isaac
physica status solidi (a), Vol. 217, Issue 7
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Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

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Similar Records

Title: Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $$(10\bar{1}0)$$ m -plane GaN substrates

Abstract

Citation Formats

Figures / Tables:

Effects of macroscopic polarization in III-V nitride multiple quantum wells journal, September 1999

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition journal, July 2009

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates journal, July 2010

Single-crystal N-polar GaN p - n diodes by plasma-assisted molecular beam epitaxy journal, June 2017

High Voltage Vertical GaN p-n Diodes With Avalanche Capability journal, October 2013

The Blue Laser Diode book, January 2000

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers journal, October 2017

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates journal, April 2017

Low cost high voltage GaN polarization superjunction field effect transistors: Low cost high voltage GaN polarization superjunction field effect transistors journal, April 2017

Gallium vacancies and the yellow luminescence in GaN journal, July 1996

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy journal, December 2015

Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films journal, April 2017

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV journal, September 2017

The 2018 GaN power electronics roadmap journal, March 2018

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination journal, July 2018

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD: High breakdown voltage p-n diodes journal, January 2016

Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment journal, May 2000

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure journal, October 2013

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer journal, March 2017

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability journal, February 2016

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C journal, April 2009

Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence journal, July 2016

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects journal, June 2007

Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis journal, February 2017

Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs journal, October 2004

720-V/0.35-m $\Omega \cdot$ cm 2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers journal, May 2018

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices journal, August 2012

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation journal, August 2017

Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET journal, August 2015

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes journal, June 2017

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes journal, January 2018

GaN-on-Si Vertical Schottky and p-n Diodes journal, June 2014

Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire journal, November 2007

Yellow luminescence and related deep levels in unintentionally doped GaN films journal, April 1999

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes journal, August 2000

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes journal, December 2019

Effects of macroscopic polarization in III-V nitride multiple quantum wells
journal, September 1999

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
journal, July 2009

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
journal, July 2010

Single-crystal N-polar GaN p - n diodes by plasma-assisted molecular beam epitaxy
journal, June 2017

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

The Blue Laser Diode
book, January 2000

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
journal, October 2017

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates
journal, April 2017

Low cost high voltage GaN polarization superjunction field effect transistors: Low cost high voltage GaN polarization superjunction field effect transistors
journal, April 2017

Gallium vacancies and the yellow luminescence in GaN
journal, July 1996

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
journal, December 2015

Origin of high hole concentrations in Mg-doped GaN films: Origin of high hole concentrations in Mg-doped GaN films
journal, April 2017

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV
journal, September 2017

The 2018 GaN power electronics roadmap
journal, March 2018

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
journal, July 2018

High breakdown voltage p-n diodes on GaN on sapphire by MOCVD: High breakdown voltage p-n diodes
journal, January 2016

Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment
journal, May 2000

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
journal, October 2013

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
journal, March 2017

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
journal, February 2016

Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C
journal, April 2009

Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence
journal, July 2016

Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. II. Sub-band-gap luminescence and electron irradiation effects
journal, June 2007

Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis
journal, February 2017

Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs
journal, October 2004

720-V/0.35-m $\Omega \cdot$ cm ² Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
journal, May 2018

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
journal, August 2012

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
journal, August 2017

Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET
journal, August 2015

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes
journal, June 2017

Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
journal, January 2018

GaN-on-Si Vertical Schottky and p-n Diodes
journal, June 2014

Nonpolar (11-20) plane AlGaN∕GaN heterojunction field effect transistors on (1-102) plane sapphire
journal, November 2007

Yellow luminescence and related deep levels in unintentionally doped GaN films
journal, April 1999

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
journal, August 2000

Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes
journal, December 2019