Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
Abstract
Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.
- Authors:
-
[1];
[2];
[2];
[2];
- Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering
- Univ. of Texas, Austin, TX (United States). Microelectronics Research Center and Dept. of Electrical and Computer Engineering
- Univ. of Texas, Austin, TX (United States). Dept. of Mechanical Engineering, and Texas Materials Inst.
- Publication Date:
- Research Org.:
- Omega Optics, Inc., Austin, TX (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1501520
- Alternate Identifier(s):
- OSTI ID: 1436017
- Grant/Contract Number:
- SC0013178
- Resource Type:
- Accepted Manuscript
- Journal Name:
- APL Materials
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 5; Journal ID: ISSN 2166-532X
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., and Wang, Yaguo. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides. United States: N. p., 2018.
Web. doi:10.1063/1.5022339.
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., & Wang, Yaguo. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides. United States. https://doi.org/10.1063/1.5022339
Chen, Ke, Roy, Anupam, Rai, Amritesh, Movva, Hema C. P., Meng, Xianghai, He, Feng, Banerjee, Sanjay K., and Wang, Yaguo. Fri .
"Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides". United States. https://doi.org/10.1063/1.5022339. https://www.osti.gov/servlets/purl/1501520.
@article{osti_1501520,
title = {Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides},
author = {Chen, Ke and Roy, Anupam and Rai, Amritesh and Movva, Hema C. P. and Meng, Xianghai and He, Feng and Banerjee, Sanjay K. and Wang, Yaguo},
abstractNote = {Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, the carrier recombination rate in MBE-grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary/edge defects in MBE-grown samples, which can serve as effective recombination centers for the photoexcited carriers. We also observed coherent acoustic phonons in both exfoliated and MBE-grown MoTe2, indicating strong electron-phonon coupling in this materials. Our measured sound velocity agrees well with the previously reported result of theoretical calculation. Our findings provide a useful reference for the fundamental parameters: carrier lifetime and sound velocity and reveal the undiscovered carrier recombination effect of grain boundary/edge defects, both of which will facilitate the defect engineering in TMD materials for high speed opto-electronics.},
doi = {10.1063/1.5022339},
journal = {APL Materials},
number = 5,
volume = 6,
place = {United States},
year = {Fri May 04 00:00:00 EDT 2018},
month = {Fri May 04 00:00:00 EDT 2018}
}
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Figures / Tables:
FIG. 1. : [(a) and (b)] TEM images of MBE-grown MoTe2 and MoSe2.10 Abundent nano-sized grains and plenty of grain boundary/edge defects are present. The arrows indicate some of the grain boundaries and edges. Reprinted with permission from Roy et al., ACS Appl. Mater. Interfaces 8(11), 7396–7402 (2016). Copyright 2016more »
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2D Materials for Terahertz Modulation
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