Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Geenen, F. A.; van Stiphout, K.; Nanakoudis, A.; Bals, S.; Vantomme, A.; Jordan-Sweet, J.; Lavoie, C.; Detavernier, Christophe

doi:10.1063/1.5009641

Title: Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Abstract

The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of t_c = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 °C , thinner films form epitaxial NiSi₂ films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of “thickness gradients,” which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness t_c.more »« less

Authors:

^[1];

^[2]; Nanakoudis, A. ^[3]; Bals, S. ^[3];

^[2];

^[4]; Lavoie, C. ^[4]; Detavernier, Christophe ^[1]

Ghent Univ., Gent (Belgium)
KU Leuven (Belgium)
Univ. of Antwerp (Belgium)
IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)

Publication Date:: Wed Feb 21 00:00:00 EST 2018

Research Org.:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

OSTI Identifier:: 1499543

Alternate Identifier(s):: OSTI ID: 1422009

Report Number(s):: BNL-209547-2018-JACI
Journal ID: ISSN 0021-8979

Grant/Contract Number:: AC02-98CH10886; SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 123; Journal Issue: 7; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Geenen, F. A., van Stiphout, K., Nanakoudis, A., Bals, S., Vantomme, A., Jordan-Sweet, J., Lavoie, C., and Detavernier, Christophe. Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5009641.

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                    Geenen, F. A., van Stiphout, K., Nanakoudis, A., Bals, S., Vantomme, A., Jordan-Sweet, J., Lavoie, C., & Detavernier, Christophe. Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration.  United States.  https://doi.org/10.1063/1.5009641

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                    Geenen, F. A., van Stiphout, K., Nanakoudis, A., Bals, S., Vantomme, A., Jordan-Sweet, J., Lavoie, C., and Detavernier, Christophe. Wed .  
"Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration".  United States.  https://doi.org/10.1063/1.5009641.  https://www.osti.gov/servlets/purl/1499543.

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@article{osti_1499543,

  title        = {Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration},

  author       = {Geenen, F. A. and van Stiphout, K. and Nanakoudis, A. and Bals, S. and Vantomme, A. and Jordan-Sweet, J. and Lavoie, C. and Detavernier, Christophe},

  abstractNote = {The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of tc = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 °C , thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of “thickness gradients,” which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness tc. Furthermore, the results are discussed in the framework of classical nucleation theory.},

  doi          = {10.1063/1.5009641},

  journal      = {Journal of Applied Physics},

  number       = 7,

  volume       = 123,

  place        = {United States},

  year         = {Wed Feb 21 00:00:00 EST 2018},

  month        = {Wed Feb 21 00:00:00 EST 2018}

}

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Works referencing / citing this record:

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Title: Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

Abstract

Citation Formats

20nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain journal, May 2012

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The Al–Ni–Si phase diagram. Part II journal, May 2004

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Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films journal, December 2010

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Enhanced Detection Sensitivity with a New Windowless XEDS System for AEM Based on Silicon Drift Detector Technology journal, July 2010

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Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness journal, January 2011

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Visualization and classification of epitaxial alignment at hetero-phase boundaries journal, January 2016

Influence of mixing entropy on the nucleation of CoSi 2 journal, November 2000

Study of nickel silicide contact on Si/Si 1-x Ge x journal, September 2003

Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films journal, January 2010

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Thermodynamics of solid transition-metal silicides
journal, June 1990

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate
journal, February 2010

Enhanced Detection Sensitivity with a New Windowless XEDS System for AEM Based on Silicon Drift Detector Technology
journal, July 2010

Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance
journal, May 2010

Epitaxial silicides
journal, July 1982

Ni based silicides for 45nm CMOS and beyond
journal, December 2004

On the growth kinetics of Ni(Pt) silicide thin films
journal, April 2013

Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness
journal, January 2011

Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films
journal, November 2006

Visualization and classification of epitaxial alignment at hetero-phase boundaries
journal, January 2016

Influence of mixing entropy on the nucleation of ${CoSi}_{2}$
journal, November 2000

Study of nickel silicide contact on Si/Si _1-x Ge _x
journal, September 2003

Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films
journal, January 2010

Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K
journal, July 1984

Texture in thin film silicides and germanides: A review
journal, September 2016

Challenges of nickel silicidation in CMOS technologies
journal, April 2015

Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time
journal, November 2008

Effect of alloying elements Mo and W on Ni silicides formation
journal, May 2014

Epitaxial Silicides
journal, January 1981

Impurity-enhanced solid-state amorphization: the Ni–Si thin film reaction altered by nitrogen
journal, February 2019