Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Abstract
Here, we demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.
- Authors:
-
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1498277
- Report Number(s):
- BNL-211323-2019-JAAM
Journal ID: ISSN 1940-087X; jove
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Visualized Experiments
- Additional Journal Information:
- Journal Issue: 139; Journal ID: ISSN 1940-087X
- Publisher:
- MyJoVE Corp.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; nanofabrication; electron-beam lithography; aberration correction; electron microscopy nanomaterials
Citation Formats
Camino, Fernando E., Manfrinato, Vitor R., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., and Black, Charles T. Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope. United States: N. p., 2018.
Web. doi:10.3791/58272.
Camino, Fernando E., Manfrinato, Vitor R., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., & Black, Charles T. Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope. United States. https://doi.org/10.3791/58272
Camino, Fernando E., Manfrinato, Vitor R., Stein, Aaron, Zhang, Lihua, Lu, Ming, Stach, Eric A., and Black, Charles T. Mon .
"Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope". United States. https://doi.org/10.3791/58272. https://www.osti.gov/servlets/purl/1498277.
@article{osti_1498277,
title = {Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope},
author = {Camino, Fernando E. and Manfrinato, Vitor R. and Stein, Aaron and Zhang, Lihua and Lu, Ming and Stach, Eric A. and Black, Charles T.},
abstractNote = {Here, we demonstrate extension of electron-beam lithography using conventional resists and pattern transfer processes to single-digit nanometer dimensions by employing an aberration-corrected scanning transmission electron microscope as the exposure tool. Here, we present results of single-digit nanometer patterning of two widely used electron-beam resists: poly (methyl methacrylate) and hydrogen silsesquioxane. The method achieves sub-5 nanometer features in poly (methyl methacrylate) and sub-10 nanometer resolution in hydrogen silsesquioxane. High-fidelity transfer of these patterns into target materials of choice can be performed using metal lift-off, plasma etch, and resist infiltration with organometallics.},
doi = {10.3791/58272},
journal = {Journal of Visualized Experiments},
number = 139,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}
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Works referenced in this record:
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Works referencing / citing this record:
In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
journal, April 2020
- Mizuno, Naomi; Camino, Fernando; Du, Xu
- Nanomaterials, Vol. 10, Issue 4