A single electron transistor charge sensor in strong rf fields

Lewis, Rupert M.; Harris, Charles Thomas; Shaner, Eric A.

doi:10.1063/1.5043212

Title: A single electron transistor charge sensor in strong rf fields

Abstract

We measure the charge sensitivity, S_e, of a single electron transistor (SET) in the presence of strong (V_rf ~ e/C_g) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where C_g is the gate capacitance. Although S_e appears to degrade when exposed to V_rf, we find that broadening of conduction peaks is largely due to the measurement technique and show that S_e is maintained even with strong V_rf present. We show cancellation of a known V_rf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.

Authors:

Lewis, Rupert M. ^[1]; Harris, Charles Thomas ^[1]; Shaner, Eric A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Oct 15 00:00:00 EDT 2018

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1496991

Alternate Identifier(s):: OSTI ID: 1477519

Report Number(s):: SAND-2019-1250J
Journal ID: ISSN 2158-3226; 672208

Grant/Contract Number:: AC04-94AL85000; NA0003525; LDRD #191210

Resource Type:: Accepted Manuscript

Journal Name:: AIP Advances

Additional Journal Information:: Journal Volume: 8; Journal Issue: 10; Journal ID: ISSN 2158-3226

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 47 OTHER INSTRUMENTATION; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Lewis, Rupert M., Harris, Charles Thomas, and Shaner, Eric A. A single electron transistor charge sensor in strong rf fields.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5043212.

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                    Lewis, Rupert M., Harris, Charles Thomas, & Shaner, Eric A. A single electron transistor charge sensor in strong rf fields.  United States.  https://doi.org/10.1063/1.5043212

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                    Lewis, Rupert M., Harris, Charles Thomas, and Shaner, Eric A. Mon .  
"A single electron transistor charge sensor in strong rf fields".  United States.  https://doi.org/10.1063/1.5043212.  https://www.osti.gov/servlets/purl/1496991.

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@article{osti_1496991,

  title        = {A single electron transistor charge sensor in strong rf fields},

  author       = {Lewis, Rupert M. and Harris, Charles Thomas and Shaner, Eric A.},

  abstractNote = {We measure the charge sensitivity, Se, of a single electron transistor (SET) in the presence of strong (Vrf ~ e/Cg) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where Cg is the gate capacitance. Although Se appears to degrade when exposed to Vrf, we find that broadening of conduction peaks is largely due to the measurement technique and show that Se is maintained even with strong Vrf present. We show cancellation of a known Vrf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.},

  doi          = {10.1063/1.5043212},

  journal      = {AIP Advances},

  number       = 10,

  volume       = 8,

  place        = {United States},

  year         = {Mon Oct 15 00:00:00 EDT 2018},

  month        = {Mon Oct 15 00:00:00 EDT 2018}

}

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https://doi.org/10.1063/1.5043212

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Figures / Tables:

Figure 1: (a) SEM micrograph of the device. b) Characteristic scan of V_sd bias vs. V_g. Line cuts at the c) Josephson quasiparticle resonances and d) coulomb blockade peaks outside the gap. Note that (b) is unintentionally offset in V_sd by about 200 μV, probably by input offsets in themore »

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Works referenced in this record:

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Similar Records

Title: A single electron transistor charge sensor in strong rf fields

Abstract

Citation Formats

Figures / Tables:

Single-shot readout of an electron spin in silicon journal, September 2010

Approaching the Quantum Limit of a Nanomechanical Resonator journal, April 2004

The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer journal, May 1998

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3 e tunneling processes in a superconducting single-electron tunneling transistor journal, December 1998

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Observation of single-electron charging effects in small tunnel junctions journal, July 1987

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Single-shot readout of an electron spin in silicon
journal, September 2010

Approaching the Quantum Limit of a Nanomechanical Resonator
journal, April 2004

The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer
journal, May 1998

Radio-frequency single-electron transistor: Toward the shot-noise limit
journal, December 2001

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journal, February 1986

$3 e$ tunneling processes in a superconducting single-electron tunneling transistor
journal, December 1998

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journal, April 2005