Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance
Abstract
Here we report a method to control contributions of bulk and surface states in the topological insulator Bi2Te2Se that allows accessing the spin-polarized transport endowed by topological surface states. An intrinsic surface dominant transport is established when cooling the sample to low temperature or reducing the conduction channel length, both achieved in situ in the transport measurements with a four-probe scanning tunneling microscope without the need of further tailoring the sample. The topological surface states show characteristic transport behaviors with mobility about an order of magnitude higher than reported before, and a spin polarization approaching the theoretically predicted value. Our result demonstrates accessibility to the intrinsic high mobility spin transport of topological surface states, which paves a way to realizing topological spintronic devices.
- Authors:
-
[1];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
- Pohang University of Science and Technology (POSTECH), Korea
- University of Florida, Gainesville
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1493127
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 17; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Ko, Wonhee, Nguyen, Giang D., Kim, Hoil, Kim, Jun Sung, Zhang, X.-G., and Li, An-Ping. Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance. United States: N. p., 2018.
Web. doi:10.1103/PhysRevLett.121.176801.
Ko, Wonhee, Nguyen, Giang D., Kim, Hoil, Kim, Jun Sung, Zhang, X.-G., & Li, An-Ping. Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance. United States. https://doi.org/10.1103/PhysRevLett.121.176801
Ko, Wonhee, Nguyen, Giang D., Kim, Hoil, Kim, Jun Sung, Zhang, X.-G., and Li, An-Ping. Wed .
"Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance". United States. https://doi.org/10.1103/PhysRevLett.121.176801. https://www.osti.gov/servlets/purl/1493127.
@article{osti_1493127,
title = {Accessing the Intrinsic Spin Transport in a Topological Insulator by Controlling the Crossover of Bulk-to-Surface Conductance},
author = {Ko, Wonhee and Nguyen, Giang D. and Kim, Hoil and Kim, Jun Sung and Zhang, X.-G. and Li, An-Ping},
abstractNote = {Here we report a method to control contributions of bulk and surface states in the topological insulator Bi2Te2Se that allows accessing the spin-polarized transport endowed by topological surface states. An intrinsic surface dominant transport is established when cooling the sample to low temperature or reducing the conduction channel length, both achieved in situ in the transport measurements with a four-probe scanning tunneling microscope without the need of further tailoring the sample. The topological surface states show characteristic transport behaviors with mobility about an order of magnitude higher than reported before, and a spin polarization approaching the theoretically predicted value. Our result demonstrates accessibility to the intrinsic high mobility spin transport of topological surface states, which paves a way to realizing topological spintronic devices.},
doi = {10.1103/PhysRevLett.121.176801},
journal = {Physical Review Letters},
number = 17,
volume = 121,
place = {United States},
year = {Wed Oct 24 00:00:00 EDT 2018},
month = {Wed Oct 24 00:00:00 EDT 2018}
}
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Cited by: 11 works
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Figures / Tables:
FIG. 1: (a) Schematics of electron transport through bulk and surface in a topological insulator, and detection of them by variable probe-spacing spectroscopy with 4P-STM. (b)-(f) Resistance vs. $X$g measured by variable probe-spacing spectroscopy at various temperature and probe spacing. Each graph is plotted with the 𝑔 value that producesmore »
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Works referencing / citing this record:
Atomic‐Scale Manipulation and In Situ Characterization with Scanning Tunneling Microscopy
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