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Title: Strong emission of THz radiation from GaAs microstructures on Si

Abstract

Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. As a result, the presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.

Authors:
 [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [3];  [1];  [1]
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  1. Gwangju Institute of Science and Technology, Gwangju (Republic of Korea)
  2. Korea Advanced NanoFab Center, Gyeonngi-do (Republic of Korea); National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1492938
Report Number(s):
NREL/JA-5K00-73196
Journal ID: ISSN 2158-3226
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 8; Journal Issue: 12; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; epitaxy; femtosecond lasers; semiconductors; terahertz radiation; microstructural properties; photoluminescence spectroscopy; THz time-domain spectroscopy; terahertz time-domain spectroscopy

Citation Formats

Maeng, Inhee, Lee, Gyuseok, Kang, Chul, Ju, Gun Wu, Park, Kwangwook, Son, Seoung -Bum, Lee, Yong -Tak, and Kee, Chul -Sik. Strong emission of THz radiation from GaAs microstructures on Si. United States: N. p., 2018. Web. doi:10.1063/1.5079668.
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Maeng, Inhee, Lee, Gyuseok, Kang, Chul, Ju, Gun Wu, Park, Kwangwook, Son, Seoung -Bum, Lee, Yong -Tak, & Kee, Chul -Sik. Strong emission of THz radiation from GaAs microstructures on Si. United States. https://doi.org/10.1063/1.5079668
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Maeng, Inhee, Lee, Gyuseok, Kang, Chul, Ju, Gun Wu, Park, Kwangwook, Son, Seoung -Bum, Lee, Yong -Tak, and Kee, Chul -Sik. Fri . "Strong emission of THz radiation from GaAs microstructures on Si". United States. https://doi.org/10.1063/1.5079668. https://www.osti.gov/servlets/purl/1492938.
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@article{osti_1492938,
title = {Strong emission of THz radiation from GaAs microstructures on Si},
author = {Maeng, Inhee and Lee, Gyuseok and Kang, Chul and Ju, Gun Wu and Park, Kwangwook and Son, Seoung -Bum and Lee, Yong -Tak and Kee, Chul -Sik},
abstractNote = {Remarkably strong emission of terahertz radiation from illuminated GaAs microstructures on a Si substrate is reported. The peak-to-peak amplitude of terahertz radiation from the sample is 9 times larger than that of THz radiation from a semi-insulating GaAs wafer. The spectral width of the sample is larger than that of a semi-insulating GaAs wafer; in particular, the spectral amplitude increases at higher frequencies. As a result, the presented GaAs microstructures on a Si substrate can be suitable for practical and efficient THz sources required in various THz applications.},
doi = {10.1063/1.5079668},
journal = {AIP Advances},
number = 12,
volume = 8,
place = {United States},
year = {Fri Dec 28 00:00:00 EST 2018},
month = {Fri Dec 28 00:00:00 EST 2018}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1063/1.5079668
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Cited by: 2 works
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Figures / Tables:

Fig. 1 Fig. 1: (a) Top-view SEM image of a GaAs-microstructure sample. (b) Close-up SEM image of a part of (a). The area indicated as “A” shows step-bunching, an evidence of step-flow crystal growth, while the straight line indicated as “B” shows a facet of a WZ crystal. (c) Low-temperature PL spectrummore » of the sample. The emission peak is observed at 1.464 eV. The inset shows a cross-section SEM image of the sample.« less
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Works referenced in this record:

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