Multi-purposed Ar gas cluster ion beam processing for graphene engineering
Abstract
Graphene, with unique mechanical and electrical properties, offers diverse application opportunities from beyond Moore’s nano-electronics to water filtration. However, accomplishing these relies on cleaning and processing large areas of supported and suspended graphene sheets. Here in this paper, we demonstrate the use of an Ar cluster ion beam as a versatile tool for graphene cleaning, defect engineering, and nanopore fabrication. In-situ and ex-situ characterization techniques were utilized in combination with first principles molecular dynamics, to highlight the differences in processing of the supported and suspended graphene samples. In this work, we monitor interaction of the Ar cluster ion beam with graphene as a function of ion dose with in-situ secondary ion mass spectrometry (SIMS), as well as ex-situ Raman spectroscopy measurements. Scanning transmission electron microscopy (STEM) results confirm that the Ar cluster ion beam can form nanopores in the suspended graphene; while the basal plane of graphene remains intact maintaining the lattice structure. Finally, Scanning Electron Microscopy (SEM) image analysis of the irradiated samples allows quantitative tracking of pore areas and their distribution as a function of ion dose. This study highlights the flexibility of the Ar cluster ion beam in 2D material processing, and offers insights into Ar beammore »
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- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computational Sciences and Engineering Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Energy & Transportation Science Division
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences; Univ. of Tennessee, Knoxville, TN (United States). Bredesen Center
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Laboratory Directed Research and Development Program (LDRD) Program
- OSTI Identifier:
- 1491317
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Carbon
- Additional Journal Information:
- Journal Volume: 131; Journal Issue: C; Journal ID: ISSN 0008-6223
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Kim, Songkil, Ievlev, Anton, Jakowski, Jacek, Vlassiouk, Ivan V., Sang, Xiahan, Brown, Chance C., Dyck, Ondrej E., Unocic, Raymond R., Kalinin, Sergei V., Belianinov, Alex, Sumpter, Bobby, Jesse, Stephen, and Ovchinnikova, Olga S. Multi-purposed Ar gas cluster ion beam processing for graphene engineering. United States: N. p., 2018.
Web. doi:10.1016/j.carbon.2018.01.098.
Kim, Songkil, Ievlev, Anton, Jakowski, Jacek, Vlassiouk, Ivan V., Sang, Xiahan, Brown, Chance C., Dyck, Ondrej E., Unocic, Raymond R., Kalinin, Sergei V., Belianinov, Alex, Sumpter, Bobby, Jesse, Stephen, & Ovchinnikova, Olga S. Multi-purposed Ar gas cluster ion beam processing for graphene engineering. United States. https://doi.org/10.1016/j.carbon.2018.01.098
Kim, Songkil, Ievlev, Anton, Jakowski, Jacek, Vlassiouk, Ivan V., Sang, Xiahan, Brown, Chance C., Dyck, Ondrej E., Unocic, Raymond R., Kalinin, Sergei V., Belianinov, Alex, Sumpter, Bobby, Jesse, Stephen, and Ovchinnikova, Olga S. Sat .
"Multi-purposed Ar gas cluster ion beam processing for graphene engineering". United States. https://doi.org/10.1016/j.carbon.2018.01.098. https://www.osti.gov/servlets/purl/1491317.
@article{osti_1491317,
title = {Multi-purposed Ar gas cluster ion beam processing for graphene engineering},
author = {Kim, Songkil and Ievlev, Anton and Jakowski, Jacek and Vlassiouk, Ivan V. and Sang, Xiahan and Brown, Chance C. and Dyck, Ondrej E. and Unocic, Raymond R. and Kalinin, Sergei V. and Belianinov, Alex and Sumpter, Bobby and Jesse, Stephen and Ovchinnikova, Olga S.},
abstractNote = {Graphene, with unique mechanical and electrical properties, offers diverse application opportunities from beyond Moore’s nano-electronics to water filtration. However, accomplishing these relies on cleaning and processing large areas of supported and suspended graphene sheets. Here in this paper, we demonstrate the use of an Ar cluster ion beam as a versatile tool for graphene cleaning, defect engineering, and nanopore fabrication. In-situ and ex-situ characterization techniques were utilized in combination with first principles molecular dynamics, to highlight the differences in processing of the supported and suspended graphene samples. In this work, we monitor interaction of the Ar cluster ion beam with graphene as a function of ion dose with in-situ secondary ion mass spectrometry (SIMS), as well as ex-situ Raman spectroscopy measurements. Scanning transmission electron microscopy (STEM) results confirm that the Ar cluster ion beam can form nanopores in the suspended graphene; while the basal plane of graphene remains intact maintaining the lattice structure. Finally, Scanning Electron Microscopy (SEM) image analysis of the irradiated samples allows quantitative tracking of pore areas and their distribution as a function of ion dose. This study highlights the flexibility of the Ar cluster ion beam in 2D material processing, and offers insights into Ar beam interaction with graphene.},
doi = {10.1016/j.carbon.2018.01.098},
journal = {Carbon},
number = C,
volume = 131,
place = {United States},
year = {Sat Feb 03 00:00:00 EST 2018},
month = {Sat Feb 03 00:00:00 EST 2018}
}
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Cited by: 13 works
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Figures / Tables:
Figure 1: Ar cluster ion beam PMMA removal in supported graphene. (a) AFM tapping mode image of the as-transferred graphene; note the spatial variation of PMMA distribution. The zoomed in inset illustrates the local topography. Average thickness of PMMA was ~ 1.5 nm (zscale for the inset: 0-5 nm). (b)more »
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Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns
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