DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus

Abstract

Few-layer black phosphorus (BP) with an in-plane puckered crystalline structure has attracted intense interest for strain engineering due to both its significant anisotropy in mechanical and electrical properties and its high intrinsic strain limit. Here, we investigated the phonon response of few layer BP under uniaxial tensile strain (~7%) with in situ polarized Raman spectroscopy. Together with the first-principles density functional theory (DFT) analysis, the anisotropic Poisson’s ratio in few-layer BP was verified as one of the primary factors that caused the large discrepancy in the trend of reported Raman frequency shift for strained BP, armchair (AC) direction in particular. By carefully including and excluding the anisotropic Poisson’s ratio in the DFT emulations, we rebuilt both trends reported for Raman mode shifts. Furthermore, the angle-resolved Raman spectroscopy was conducted in situ under tensile strain for systematic investigation of the in-plane anisotropy of BP phonon response. The experimentally observed thickness and crystallographic orientation dependence is elaborated using DFT theory as having a strong correlation between the strain-perturbated electronic-band structure and the phonon vibration modes. Furthermore, this study provides insight, both experimentally and theoretically, for the complex electron–phonon interaction behavior in strained BP, which enables diverse possibilities for the strain engineering ofmore » electrical and optical properties in BP and similar two-dimensional nanomaterials.« less

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1];  [1];  [1]
  1. The Univ. of Texas, Austin, TX (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1489574
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 12; Journal Issue: 12; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; angle-resolved Raman spectroscopy; anisotropic Poisson’s ratio; black phosphorus; electron−phonon interactions; strain engineering

Citation Formats

Zhu, Weinan, Liang, Liangbo, Roberts, Richard H., Lin, Jung -Fu, and Akinwande, Deji. Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus. United States: N. p., 2018. Web. doi:10.1021/acsnano.8b06940.
Zhu, Weinan, Liang, Liangbo, Roberts, Richard H., Lin, Jung -Fu, & Akinwande, Deji. Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus. United States. https://doi.org/10.1021/acsnano.8b06940
Zhu, Weinan, Liang, Liangbo, Roberts, Richard H., Lin, Jung -Fu, and Akinwande, Deji. Mon . "Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus". United States. https://doi.org/10.1021/acsnano.8b06940. https://www.osti.gov/servlets/purl/1489574.
@article{osti_1489574,
title = {Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus},
author = {Zhu, Weinan and Liang, Liangbo and Roberts, Richard H. and Lin, Jung -Fu and Akinwande, Deji},
abstractNote = {Few-layer black phosphorus (BP) with an in-plane puckered crystalline structure has attracted intense interest for strain engineering due to both its significant anisotropy in mechanical and electrical properties and its high intrinsic strain limit. Here, we investigated the phonon response of few layer BP under uniaxial tensile strain (~7%) with in situ polarized Raman spectroscopy. Together with the first-principles density functional theory (DFT) analysis, the anisotropic Poisson’s ratio in few-layer BP was verified as one of the primary factors that caused the large discrepancy in the trend of reported Raman frequency shift for strained BP, armchair (AC) direction in particular. By carefully including and excluding the anisotropic Poisson’s ratio in the DFT emulations, we rebuilt both trends reported for Raman mode shifts. Furthermore, the angle-resolved Raman spectroscopy was conducted in situ under tensile strain for systematic investigation of the in-plane anisotropy of BP phonon response. The experimentally observed thickness and crystallographic orientation dependence is elaborated using DFT theory as having a strong correlation between the strain-perturbated electronic-band structure and the phonon vibration modes. Furthermore, this study provides insight, both experimentally and theoretically, for the complex electron–phonon interaction behavior in strained BP, which enables diverse possibilities for the strain engineering of electrical and optical properties in BP and similar two-dimensional nanomaterials.},
doi = {10.1021/acsnano.8b06940},
journal = {ACS Nano},
number = 12,
volume = 12,
place = {United States},
year = {Mon Dec 03 00:00:00 EST 2018},
month = {Mon Dec 03 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 28 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Charge trap memory based on few-layer black phosphorus
journal, January 2016


Black Phosphorus Quantum Dots
journal, February 2015

  • Zhang, Xiao; Xie, Haiming; Liu, Zhengdong
  • Angewandte Chemie International Edition, Vol. 54, Issue 12
  • DOI: 10.1002/anie.201409400

Superior mechanical flexibility of phosphorene and few-layer black phosphorus
journal, June 2014

  • Wei, Qun; Peng, Xihong
  • Applied Physics Letters, Vol. 104, Issue 25
  • DOI: 10.1063/1.4885215

Auxetic Black Phosphorus: A 2D Material with Negative Poisson’s Ratio
journal, September 2016


Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
journal, July 2014

  • Xia, Fengnian; Wang, Han; Jia, Yichen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5458

Toward air-stable multilayer phosphorene thin-films and transistors
journal, March 2015

  • Kim, Joon-Seok; Liu, Yingnan; Zhu, Weinan
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep08989

Identifying the Crystalline Orientation of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy
journal, January 2015

  • Wu, Juanxia; Mao, Nannan; Xie, Liming
  • Angewandte Chemie International Edition, Vol. 54, Issue 8
  • DOI: 10.1002/anie.201410108

Strain-Engineering the Anisotropic Electrical Conductance of Few-Layer Black Phosphorus
journal, April 2014


Black Phosphorus Flexible Thin Film Transistors at Gighertz Frequencies
journal, March 2016


Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
journal, November 2014

  • Wood, Joshua D.; Wells, Spencer A.; Jariwala, Deep
  • Nano Letters, Vol. 14, Issue 12
  • DOI: 10.1021/nl5032293

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
journal, March 2015


Hot‐electron induced interface traps in metal/SiO 2 /Si capacitors: The effect of gate‐induced strain
journal, May 1986

  • Hook, Terence B.; Ma, T. P.
  • Applied Physics Letters, Vol. 48, Issue 18
  • DOI: 10.1063/1.96983

First-principles Raman spectra of MoS2, WS2 and their heterostructures
journal, January 2014


On-Surface Synthesis and Characterization of 9-Atom Wide Armchair Graphene Nanoribbons
journal, February 2017


Band gap of strained graphene nanoribbons
journal, March 2010


Raman spectroscopy in black phosphorus: Raman spectroscopy in black phosphorus
journal, September 2017

  • Ribeiro, Henrique B.; Pimenta, Marcos A.; de Matos, Christiano J. S.
  • Journal of Raman Spectroscopy, Vol. 49, Issue 1
  • DOI: 10.1002/jrs.5238

Isolation and characterization of few-layer black phosphorus
journal, June 2014


High-quality sandwiched black phosphorus heterostructure and its quantum oscillations
journal, June 2015

  • Chen, Xiaolong; Wu, Yingying; Wu, Zefei
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8315

Giant Anisotropic Raman Response of Encapsulated Ultrathin Black Phosphorus by Uniaxial Strain
journal, June 2016

  • Li, Yanyong; Hu, Zhixin; Lin, Shenghuang
  • Advanced Functional Materials, Vol. 27, Issue 19
  • DOI: 10.1002/adfm.201600986

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS 2
journal, February 2013


Mechanical and Electrical Anisotropy of Few-Layer Black Phosphorus
journal, October 2015


Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus
journal, March 2016


Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene
journal, August 2014


Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition
journal, November 2014

  • Liu, Zheng; Amani, Matin; Najmaei, Sina
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms6246

Lattice Vibration and Raman Scattering in Anisotropic Black Phosphorus Crystals
journal, April 2018


High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
journal, July 2014

  • Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms5475

Highly anisotropic and robust excitons in monolayer black phosphorus
journal, April 2015

  • Wang, Xiaomu; Jones, Aaron M.; Seyler, Kyle L.
  • Nature Nanotechnology, Vol. 10, Issue 6
  • DOI: 10.1038/nnano.2015.71

Anomalous polarization dependence of Raman scattering and crystallographic orientation of black phosphorus
journal, January 2015

  • Kim, Jungcheol; Lee, Jae-Ung; Lee, Jinhwan
  • Nanoscale, Vol. 7, Issue 44
  • DOI: 10.1039/C5NR04349B

Band structure engineering of graphene by strain: First-principles calculations
journal, August 2008


Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus
journal, May 2015


Unusual Angular Dependence of the Raman Response in Black Phosphorus
journal, February 2015

  • Ribeiro, Henrique B.; Pimenta, Marcos A.; de Matos, Christiano J. S.
  • ACS Nano, Vol. 9, Issue 4
  • DOI: 10.1021/acsnano.5b00698

High-Performance, Highly Bendable MoS 2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
journal, May 2013

  • Chang, Hsiao-Yu; Yang, Shixuan; Lee, Jongho
  • ACS Nano, Vol. 7, Issue 6
  • DOI: 10.1021/nn401429w

Van der Waals Density Functional for General Geometries
journal, June 2004


Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors
journal, May 2014

  • Buscema, Michele; Groenendijk, Dirk J.; Blanter, Sofya I.
  • Nano Letters, Vol. 14, Issue 6
  • DOI: 10.1021/nl5008085

Remarkable anisotropic phonon response in uniaxially strained few-layer black phosphorus
journal, November 2015


High-frequency prospects of 2D nanomaterials for flexible nanoelectronics from baseband to sub-THz devices
conference, December 2015

  • Park, Saungeun; Zhu, Weinan; Chang, Hsiao-Yu
  • 2015 IEEE International Electron Devices Meeting (IEDM)
  • DOI: 10.1109/IEDM.2015.7409812

Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
journal, March 2014

  • Liu, Han; Neal, Adam T.; Zhu, Zhen
  • ACS Nano, Vol. 8, Issue 4
  • DOI: 10.1021/nn501226z

Lattice vibrational modes and Raman scattering spectra of strained phosphorene
journal, August 2014

  • Fei, Ruixiang; Yang, Li
  • Applied Physics Letters, Vol. 105, Issue 8
  • DOI: 10.1063/1.4894273

Black phosphorus field-effect transistors
journal, March 2014


Interference effect on Raman spectrum of graphene on SiO 2 / Si
journal, September 2009


Raman scattering intensities in α-quartz: A first-principles investigation
journal, February 2001


In-Plane Uniaxial Strain in Black Phosphorus Enables the Identification of Crystalline Orientation
journal, June 2017


Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator
journal, February 2015

  • Zhu, Weinan; Yogeesh, Maruthi N.; Yang, Shixuan
  • Nano Letters, Vol. 15, Issue 3
  • DOI: 10.1021/nl5047329

Impact of oxide trap charge on performance of strained fully depleted SOI metal-gate MOSFET
conference, December 2009

  • Yeh, W. K.; Wang, C. C.; Hsu, C. W.
  • 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
  • DOI: 10.1109/EDSSC.2009.5394288

Flexible 2D electronics using nanoscale transparent polyimide gate dielectric
conference, June 2015

  • Park, Saungeun; Chang, Hsiao-Yu; Rahimi, Somayyeh
  • 2015 73rd Annual Device Research Conference (DRC)
  • DOI: 10.1109/DRC.2015.7175628

Works referencing / citing this record:

Raman Activity of Multilayer Phosphorene under Strain
journal, December 2019


Thermal Transport in 2D Semiconductors—Considerations for Device Applications
journal, August 2019

  • Zhao, Yunshan; Cai, Yongqing; Zhang, Lifa
  • Advanced Functional Materials, Vol. 30, Issue 8
  • DOI: 10.1002/adfm.201903929

Anisotropic thermal conductivity in direction-specific black phosphorus nanoflakes
journal, September 2019

  • Liu, Heguang; Liu, Jianxi; Jing, Ruixuan
  • MRS Communications, Vol. 9, Issue 4
  • DOI: 10.1557/mrc.2019.127