Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies
Abstract
We report that the development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion–vacancy pairs are promising qubit candidates in two binary crystals: 4H-SiC and w-AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. Lastly, the defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.
- Authors:
-
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States); Ajou University, Suwon (Republic of Korea)
- Univ. of Chicago, IL (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, IL (United States)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); University of Chicago, Materials Research Science & Engineering Center (MRSEC); USDOE
- OSTI Identifier:
- 1489273
- Alternate Identifier(s):
- OSTI ID: 1413021
- Grant/Contract Number:
- AC02-06CH11357; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 1; Journal Issue: 7; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Seo, Hosung, Ma, He, Govoni, Marco, and Galli, Giulia. Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies. United States: N. p., 2017.
Web. doi:10.1103/PhysRevMaterials.1.075002.
Seo, Hosung, Ma, He, Govoni, Marco, & Galli, Giulia. Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies. United States. https://doi.org/10.1103/PhysRevMaterials.1.075002
Seo, Hosung, Ma, He, Govoni, Marco, and Galli, Giulia. Tue .
"Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies". United States. https://doi.org/10.1103/PhysRevMaterials.1.075002. https://www.osti.gov/servlets/purl/1489273.
@article{osti_1489273,
title = {Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies},
author = {Seo, Hosung and Ma, He and Govoni, Marco and Galli, Giulia},
abstractNote = {We report that the development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion–vacancy pairs are promising qubit candidates in two binary crystals: 4H-SiC and w-AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. Lastly, the defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.},
doi = {10.1103/PhysRevMaterials.1.075002},
journal = {Physical Review Materials},
number = 7,
volume = 1,
place = {United States},
year = {Tue Dec 12 00:00:00 EST 2017},
month = {Tue Dec 12 00:00:00 EST 2017}
}
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Works referencing / citing this record:
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