Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy

Limpens, Rens; Sugimoto, Hiroshi; Neale, Nathan R.; Fujii, Minoru

doi:10.1021/acsphotonics.8b00671

Title: Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy

Abstract

We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.

Authors:

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National Renewable Energy Lab. (NREL), Golden, CO (United States)
Kobe Univ. (Japan)

Publication Date:: Fri Sep 21 00:00:00 EDT 2018

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1487325

Report Number(s):: NREL/JA-5900-71547
Journal ID: ISSN 2330-4022

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: ACS Photonics

Additional Journal Information:: Journal Volume: 5; Journal Issue: 10; Journal ID: ISSN 2330-4022

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 77 NANOSCIENCE AND NANOTECHNOLOGY; silicon nanoparticles; substitutional doping; ultrafast spectroscopy; Auger interactions; free carriers

Citation Formats


                    Limpens, Rens, Sugimoto, Hiroshi, Neale, Nathan R., and Fujii, Minoru. Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy.  United States: N. p., 2018. 
Web.  doi:10.1021/acsphotonics.8b00671.

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                    Limpens, Rens, Sugimoto, Hiroshi, Neale, Nathan R., & Fujii, Minoru. Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy.  United States.  https://doi.org/10.1021/acsphotonics.8b00671

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                    Limpens, Rens, Sugimoto, Hiroshi, Neale, Nathan R., and Fujii, Minoru. Fri .  
"Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy".  United States.  https://doi.org/10.1021/acsphotonics.8b00671.  https://www.osti.gov/servlets/purl/1487325.

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@article{osti_1487325,

  title        = {Critical Size for Carrier Delocalization in Doped Silicon Nanocrystals: A Study by Ultrafast Spectroscopy},

  author       = {Limpens, Rens and Sugimoto, Hiroshi and Neale, Nathan R. and Fujii, Minoru},

  abstractNote = {We present a comprehensive ultrafast spectroscopy-based study on the delocalization of doping-induced carriers in Si nanocrystals (NCs). To this end we prepare thin films of differently-sized doped Si NCs and vary the doping configurations from singly P and B doping to simultaneously P and B co-doping. We show that the NC size orchestrates the level of delocalization of the doping-induced carriers.},

  doi          = {10.1021/acsphotonics.8b00671},

  journal      = {ACS Photonics},

  number       = 10,

  volume       = 5,

  place        = {United States},

  year         = {Fri Sep 21 00:00:00 EDT 2018},

  month        = {Fri Sep 21 00:00:00 EDT 2018}

}

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https://doi.org/10.1021/acsphotonics.8b00671

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Cited by: 6 works

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Figures / Tables:

Table 1: Sample characteristics. Estimated P and B concentrations reflect the average concentration in the sputtered films.

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