Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance
Abstract
Although molecular charge-transfer doping is widely used to manipulate carrier density in organic semiconductors, only a small fraction of charge carriers typically escape the Coulomb potential of dopant counterions to contribute to electrical conductivity. Here, we utilize microwave and direct-current (DC) measurements of electrical conductivity to demonstrate that a high percentage of charge carriers in redox-doped semiconducting single-walled carbon nanotube (s-SWCNT) networks is delocalized as a free carrier density in the p-electron system (estimated as >46% at high doping densities). The microwave and four-point probe conductivities of hole-doped s-SWCNT films quantitatively match over almost 4 orders of magnitude in conductance, indicating that both measurements are dominated by the same population of delocalized carriers. We address the relevance of this surprising one-to-one correspondence by discussing the degree to which local environmental parameters (e.g., tube-tube junctions, Coulombic stabilization, and local bonding environment) may impact the relative magnitudes of each transport measurement.
- Authors:
-
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
- Publication Date:
- Research Org.:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1484594
- Report Number(s):
- NREL/JA-5K00-72779
Journal ID: ISSN 1948-7185
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry Letters
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 23; Journal ID: ISSN 1948-7185
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Citation Formats
Ferguson, Andrew J., Reid, Obadiah G., Nanayakkara, Sanjini U., Ihly, Rachelle, and Blackburn, Jeffrey L. Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance. United States: N. p., 2018.
Web. doi:10.1021/acs.jpclett.8b03074.
Ferguson, Andrew J., Reid, Obadiah G., Nanayakkara, Sanjini U., Ihly, Rachelle, & Blackburn, Jeffrey L. Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance. United States. https://doi.org/10.1021/acs.jpclett.8b03074
Ferguson, Andrew J., Reid, Obadiah G., Nanayakkara, Sanjini U., Ihly, Rachelle, and Blackburn, Jeffrey L. Tue .
"Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance". United States. https://doi.org/10.1021/acs.jpclett.8b03074. https://www.osti.gov/servlets/purl/1484594.
@article{osti_1484594,
title = {Efficiency of Charge-Transfer Doping in Organic Semiconductors Probed with Quantitative Microwave and Direct-Current Conductance},
author = {Ferguson, Andrew J. and Reid, Obadiah G. and Nanayakkara, Sanjini U. and Ihly, Rachelle and Blackburn, Jeffrey L.},
abstractNote = {Although molecular charge-transfer doping is widely used to manipulate carrier density in organic semiconductors, only a small fraction of charge carriers typically escape the Coulomb potential of dopant counterions to contribute to electrical conductivity. Here, we utilize microwave and direct-current (DC) measurements of electrical conductivity to demonstrate that a high percentage of charge carriers in redox-doped semiconducting single-walled carbon nanotube (s-SWCNT) networks is delocalized as a free carrier density in the p-electron system (estimated as >46% at high doping densities). The microwave and four-point probe conductivities of hole-doped s-SWCNT films quantitatively match over almost 4 orders of magnitude in conductance, indicating that both measurements are dominated by the same population of delocalized carriers. We address the relevance of this surprising one-to-one correspondence by discussing the degree to which local environmental parameters (e.g., tube-tube junctions, Coulombic stabilization, and local bonding environment) may impact the relative magnitudes of each transport measurement.},
doi = {10.1021/acs.jpclett.8b03074},
journal = {Journal of Physical Chemistry Letters},
number = 23,
volume = 9,
place = {United States},
year = {Tue Nov 20 00:00:00 EST 2018},
month = {Tue Nov 20 00:00:00 EST 2018}
}
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