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Title: VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO

Authors:
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Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP)
Contributing Org.:
nEXO Collaboration
OSTI Identifier:
1484172
Alternate Identifier(s):
OSTI ID: 1490461; OSTI ID: 1525726
Report Number(s):
BNL-209530-2018-JAAM; LLNL-JRNL-759459
Journal ID: ISSN 0018-9499
Grant/Contract Number:  
SC0012704; AC02-76SF00515; AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 65; Journal Issue: 11; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
73 NUCLEAR PHYSICS AND RADIATION PHYSICS

Citation Formats

Jamil, A., Ziegler, T., Hufschmidt, P., Li, G., Lupin-Jimenez, L., Michel, T., Ostrovskiy, I., Retiere, F., Schneider, J., Wagenpfeil, M., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, G. F., Cao, L., Cen, W. R., Chambers, C., Charlebois, S. A., Chiu, M., Cleveland, B., Coon, M., Cote, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S. J., Daughhetee, J., Delaquis, S., Der Mesrobian-Kabakian, A., DeVoe, R., Dilling, J., Ding, Y. Y., Dolinski, M. J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E. V., Harris, D., Hasan, M., Heffner, M., Hobl, J., Hoppe, E. W., House, A., Hughes, M., Ito, Y., Iverson, A., Jessiman, C., Jewell, M. J., Jiang, X. S., Karelin, A., Kaufman, L. J., Koffas, T., Kravitz, S., Krucken, R., Kuchenkov, A., Kumar, K. S., Lan, Y., Larson, A., Leonard, D. S., Li, S., Li, Z., Licciardi, C., Lin, Y. H., Lv, P., MacLellan, R., Mong, B., Moore, D. C., Murray, K., Newby, R. J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Odian, A., Oriunno, M., Orrell, J. L., Ortega, G. S., Overman, C. T., Parent, S., Piepke, A., Pocar, A., Pratte, J. -F., Qiu, D., Radeka, V., Raguzin, E., Rao, T., Rescia, S., Robinson, A., Rossignol, T., Rowson, P. C., Roy, N., Saldanha, R., Sangiorgio, S., Schmidt, S., Schubert, A., Sinclair, D., Skarpaas, K., Soma, A. K., St-Hilaire, G., Stekhanov, V., Stiegler, T., Sun, X. L., Tarka, M., Todd, J., Tolba, T., Totev, T. I., Tsang, R., Tsang, T., Vachon, F., Veenstra, B., Veeraraghavan, V., Visser, G., Vuilleumier, J. -L., Wang, Q., Watkins, J., Weber, M., Wei, W., Wen, L. J., Wichoski, U., Wrede, G., Wu, S. X., Wu, W. H., Xia, Q., Yang, L., Yen, Y. -R., Zeldovich, O., Zhang, X., Zhao, J., and Zhou, Y. VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO. United States: N. p., 2018. Web. doi:10.1109/TNS.2018.2875668.
Jamil, A., Ziegler, T., Hufschmidt, P., Li, G., Lupin-Jimenez, L., Michel, T., Ostrovskiy, I., Retiere, F., Schneider, J., Wagenpfeil, M., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, G. F., Cao, L., Cen, W. R., Chambers, C., Charlebois, S. A., Chiu, M., Cleveland, B., Coon, M., Cote, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S. J., Daughhetee, J., Delaquis, S., Der Mesrobian-Kabakian, A., DeVoe, R., Dilling, J., Ding, Y. Y., Dolinski, M. J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E. V., Harris, D., Hasan, M., Heffner, M., Hobl, J., Hoppe, E. W., House, A., Hughes, M., Ito, Y., Iverson, A., Jessiman, C., Jewell, M. J., Jiang, X. S., Karelin, A., Kaufman, L. J., Koffas, T., Kravitz, S., Krucken, R., Kuchenkov, A., Kumar, K. S., Lan, Y., Larson, A., Leonard, D. S., Li, S., Li, Z., Licciardi, C., Lin, Y. H., Lv, P., MacLellan, R., Mong, B., Moore, D. C., Murray, K., Newby, R. J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Odian, A., Oriunno, M., Orrell, J. L., Ortega, G. S., Overman, C. T., Parent, S., Piepke, A., Pocar, A., Pratte, J. -F., Qiu, D., Radeka, V., Raguzin, E., Rao, T., Rescia, S., Robinson, A., Rossignol, T., Rowson, P. C., Roy, N., Saldanha, R., Sangiorgio, S., Schmidt, S., Schubert, A., Sinclair, D., Skarpaas, K., Soma, A. K., St-Hilaire, G., Stekhanov, V., Stiegler, T., Sun, X. L., Tarka, M., Todd, J., Tolba, T., Totev, T. I., Tsang, R., Tsang, T., Vachon, F., Veenstra, B., Veeraraghavan, V., Visser, G., Vuilleumier, J. -L., Wang, Q., Watkins, J., Weber, M., Wei, W., Wen, L. J., Wichoski, U., Wrede, G., Wu, S. X., Wu, W. H., Xia, Q., Yang, L., Yen, Y. -R., Zeldovich, O., Zhang, X., Zhao, J., & Zhou, Y. VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO. United States. https://doi.org/10.1109/TNS.2018.2875668
Jamil, A., Ziegler, T., Hufschmidt, P., Li, G., Lupin-Jimenez, L., Michel, T., Ostrovskiy, I., Retiere, F., Schneider, J., Wagenpfeil, M., Alamre, A., Albert, J. B., Anton, G., Arnquist, I. J., Badhrees, I., Barbeau, P. S., Beck, D., Belov, V., Bhatta, T., Bourque, F., Brodsky, J. P., Brown, E., Brunner, T., Burenkov, A., Cao, G. F., Cao, L., Cen, W. R., Chambers, C., Charlebois, S. A., Chiu, M., Cleveland, B., Coon, M., Cote, M., Craycraft, A., Cree, W., Dalmasson, J., Daniels, T., Darroch, L., Daugherty, S. J., Daughhetee, J., Delaquis, S., Der Mesrobian-Kabakian, A., DeVoe, R., Dilling, J., Ding, Y. Y., Dolinski, M. J., Dragone, A., Echevers, J., Fabris, L., Fairbank, D., Fairbank, W., Farine, J., Feyzbakhsh, S., Fontaine, R., Fudenberg, D., Gallina, G., Giacomini, G., Gornea, R., Gratta, G., Hansen, E. V., Harris, D., Hasan, M., Heffner, M., Hobl, J., Hoppe, E. W., House, A., Hughes, M., Ito, Y., Iverson, A., Jessiman, C., Jewell, M. J., Jiang, X. S., Karelin, A., Kaufman, L. J., Koffas, T., Kravitz, S., Krucken, R., Kuchenkov, A., Kumar, K. S., Lan, Y., Larson, A., Leonard, D. S., Li, S., Li, Z., Licciardi, C., Lin, Y. H., Lv, P., MacLellan, R., Mong, B., Moore, D. C., Murray, K., Newby, R. J., Ning, Z., Njoya, O., Nolet, F., Nusair, O., Odgers, K., Odian, A., Oriunno, M., Orrell, J. L., Ortega, G. S., Overman, C. T., Parent, S., Piepke, A., Pocar, A., Pratte, J. -F., Qiu, D., Radeka, V., Raguzin, E., Rao, T., Rescia, S., Robinson, A., Rossignol, T., Rowson, P. C., Roy, N., Saldanha, R., Sangiorgio, S., Schmidt, S., Schubert, A., Sinclair, D., Skarpaas, K., Soma, A. K., St-Hilaire, G., Stekhanov, V., Stiegler, T., Sun, X. L., Tarka, M., Todd, J., Tolba, T., Totev, T. I., Tsang, R., Tsang, T., Vachon, F., Veenstra, B., Veeraraghavan, V., Visser, G., Vuilleumier, J. -L., Wang, Q., Watkins, J., Weber, M., Wei, W., Wen, L. J., Wichoski, U., Wrede, G., Wu, S. X., Wu, W. H., Xia, Q., Yang, L., Yen, Y. -R., Zeldovich, O., Zhang, X., Zhao, J., and Zhou, Y. Fri . "VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO". United States. https://doi.org/10.1109/TNS.2018.2875668. https://www.osti.gov/servlets/purl/1484172.
@article{osti_1484172,
title = {VUV-sensitive Silicon Photomultipliers for Xenon Scintillation Light Detection in nEXO},
author = {Jamil, A. and Ziegler, T. and Hufschmidt, P. and Li, G. and Lupin-Jimenez, L. and Michel, T. and Ostrovskiy, I. and Retiere, F. and Schneider, J. and Wagenpfeil, M. and Alamre, A. and Albert, J. B. and Anton, G. and Arnquist, I. J. and Badhrees, I. and Barbeau, P. S. and Beck, D. and Belov, V. and Bhatta, T. and Bourque, F. and Brodsky, J. P. and Brown, E. and Brunner, T. and Burenkov, A. and Cao, G. F. and Cao, L. and Cen, W. R. and Chambers, C. and Charlebois, S. A. and Chiu, M. and Cleveland, B. and Coon, M. and Cote, M. and Craycraft, A. and Cree, W. and Dalmasson, J. and Daniels, T. and Darroch, L. and Daugherty, S. J. and Daughhetee, J. and Delaquis, S. and Der Mesrobian-Kabakian, A. and DeVoe, R. and Dilling, J. and Ding, Y. Y. and Dolinski, M. J. and Dragone, A. and Echevers, J. and Fabris, L. and Fairbank, D. and Fairbank, W. and Farine, J. and Feyzbakhsh, S. and Fontaine, R. and Fudenberg, D. and Gallina, G. and Giacomini, G. and Gornea, R. and Gratta, G. and Hansen, E. V. and Harris, D. and Hasan, M. and Heffner, M. and Hobl, J. and Hoppe, E. W. and House, A. and Hughes, M. and Ito, Y. and Iverson, A. and Jessiman, C. and Jewell, M. J. and Jiang, X. S. and Karelin, A. and Kaufman, L. J. and Koffas, T. and Kravitz, S. and Krucken, R. and Kuchenkov, A. and Kumar, K. S. and Lan, Y. and Larson, A. and Leonard, D. S. and Li, S. and Li, Z. and Licciardi, C. and Lin, Y. H. and Lv, P. and MacLellan, R. and Mong, B. and Moore, D. C. and Murray, K. and Newby, R. J. and Ning, Z. and Njoya, O. and Nolet, F. and Nusair, O. and Odgers, K. and Odian, A. and Oriunno, M. and Orrell, J. L. and Ortega, G. S. and Overman, C. T. and Parent, S. and Piepke, A. and Pocar, A. and Pratte, J. -F. and Qiu, D. and Radeka, V. and Raguzin, E. and Rao, T. and Rescia, S. and Robinson, A. and Rossignol, T. and Rowson, P. C. and Roy, N. and Saldanha, R. and Sangiorgio, S. and Schmidt, S. and Schubert, A. and Sinclair, D. and Skarpaas, K. and Soma, A. K. and St-Hilaire, G. and Stekhanov, V. and Stiegler, T. and Sun, X. L. and Tarka, M. and Todd, J. and Tolba, T. and Totev, T. I. and Tsang, R. and Tsang, T. and Vachon, F. and Veenstra, B. and Veeraraghavan, V. and Visser, G. and Vuilleumier, J. -L. and Wang, Q. and Watkins, J. and Weber, M. and Wei, W. and Wen, L. J. and Wichoski, U. and Wrede, G. and Wu, S. X. and Wu, W. H. and Xia, Q. and Yang, L. and Yen, Y. -R. and Zeldovich, O. and Zhang, X. and Zhao, J. and Zhou, Y.},
abstractNote = {},
doi = {10.1109/TNS.2018.2875668},
journal = {IEEE Transactions on Nuclear Science},
number = 11,
volume = 65,
place = {United States},
year = {Fri Oct 12 00:00:00 EDT 2018},
month = {Fri Oct 12 00:00:00 EDT 2018}
}

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Figures / Tables:

Fig. 1 Fig. 1: Conceptual arrangement of SiPMs inside the nEXO TPC. The SiPMs will be grouped into tiles of 8 × 8 dies with 30 tiles mounted onto staves, and a total of 24 staves to cover the whole lateral surface. The full assembly is 124 cm in height and 118more » cm in diameter and will incorporate about 4 m2 of SiPMs.« less

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Works referencing / citing this record:

Silicon Photomultipliers: Technology Optimizations for Ultraviolet, Visible and Near-Infrared Range
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