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Title: Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation

Abstract

Light-emitting sources and devices permeate every aspect of our lives and are used in lighting, communications, transportation, computing, and medicine. Advances in multifunctional and “smart lighting” would require revolutionary concepts in the control of emission spectra and directionality. Such control might be possible with new schemes and regimes of light–matter interaction paired with developments in light-emitting materials. We show that all-dielectric metasurfaces made from III–V semiconductors with embedded emitters have the potential to provide revolutionary lighting concepts and devices, with new functionality that goes far beyond what is available in existing technologies. Specifically, we use Mie-resonant metasurfaces made from semiconductor heterostructures containing epitaxial quantum dots. By controlling the symmetry of the resonant modes, their overlap with the emission spectra, and other structural parameters, we can enhance the brightness by 2 orders of magnitude, as well as reduce its far-field divergence significantly.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [3];  [4];  [4];  [4]; ORCiD logo [1];  [4]; ORCiD logo [4]; ORCiD logo [5];  [5]; ORCiD logo [5]; ORCiD logo [5]; ORCiD logo [5];  [2];  [2];  [3];  [4]; ORCiD logo [2]; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
  2. Friedrich Schiller Univ. Jena (Germany). Inst. of Applied Physics. Abbe Center of Photonics
  3. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials (CHTM)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  5. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA); LANL Laboratory Directed Research and Development (LDRD) Program; German Research Foundation (DFG); Thuringian State Government (Germany)
OSTI Identifier:
1482014
Report Number(s):
LA-UR-18-28615
Journal ID: ISSN 1530-6984
Grant/Contract Number:  
AC52-06NA25396; NA0003525; STA 1426/2-1
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 11; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; Material Science

Citation Formats

Liu, Sheng, Vaskin, Aleksandr, Addamane, Sadhvikas, Leung, Benjamin, Tsai, Miao-Chan, Yang, Yuanmu, Vabishchevich, Polina P., Keeler, Gordon A., Wang, George, He, Xiaowei, Kim, Younghee, Hartmann, Nicolai F., Htoon, Han, Doorn, Stephen K., Zilk, Matthias, Pertsch, Thomas, Balakrishnan, Ganesh, Sinclair, Michael B., Staude, Isabelle, and Brener, Igal. Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.8b02808.
Liu, Sheng, Vaskin, Aleksandr, Addamane, Sadhvikas, Leung, Benjamin, Tsai, Miao-Chan, Yang, Yuanmu, Vabishchevich, Polina P., Keeler, Gordon A., Wang, George, He, Xiaowei, Kim, Younghee, Hartmann, Nicolai F., Htoon, Han, Doorn, Stephen K., Zilk, Matthias, Pertsch, Thomas, Balakrishnan, Ganesh, Sinclair, Michael B., Staude, Isabelle, & Brener, Igal. Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation. United States. https://doi.org/10.1021/acs.nanolett.8b02808
Liu, Sheng, Vaskin, Aleksandr, Addamane, Sadhvikas, Leung, Benjamin, Tsai, Miao-Chan, Yang, Yuanmu, Vabishchevich, Polina P., Keeler, Gordon A., Wang, George, He, Xiaowei, Kim, Younghee, Hartmann, Nicolai F., Htoon, Han, Doorn, Stephen K., Zilk, Matthias, Pertsch, Thomas, Balakrishnan, Ganesh, Sinclair, Michael B., Staude, Isabelle, and Brener, Igal. Fri . "Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation". United States. https://doi.org/10.1021/acs.nanolett.8b02808. https://www.osti.gov/servlets/purl/1482014.
@article{osti_1482014,
title = {Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation},
author = {Liu, Sheng and Vaskin, Aleksandr and Addamane, Sadhvikas and Leung, Benjamin and Tsai, Miao-Chan and Yang, Yuanmu and Vabishchevich, Polina P. and Keeler, Gordon A. and Wang, George and He, Xiaowei and Kim, Younghee and Hartmann, Nicolai F. and Htoon, Han and Doorn, Stephen K. and Zilk, Matthias and Pertsch, Thomas and Balakrishnan, Ganesh and Sinclair, Michael B. and Staude, Isabelle and Brener, Igal},
abstractNote = {Light-emitting sources and devices permeate every aspect of our lives and are used in lighting, communications, transportation, computing, and medicine. Advances in multifunctional and “smart lighting” would require revolutionary concepts in the control of emission spectra and directionality. Such control might be possible with new schemes and regimes of light–matter interaction paired with developments in light-emitting materials. We show that all-dielectric metasurfaces made from III–V semiconductors with embedded emitters have the potential to provide revolutionary lighting concepts and devices, with new functionality that goes far beyond what is available in existing technologies. Specifically, we use Mie-resonant metasurfaces made from semiconductor heterostructures containing epitaxial quantum dots. By controlling the symmetry of the resonant modes, their overlap with the emission spectra, and other structural parameters, we can enhance the brightness by 2 orders of magnitude, as well as reduce its far-field divergence significantly.},
doi = {10.1021/acs.nanolett.8b02808},
journal = {Nano Letters},
number = 11,
volume = 18,
place = {United States},
year = {Fri Oct 19 00:00:00 EDT 2018},
month = {Fri Oct 19 00:00:00 EDT 2018}
}

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Figures / Tables:

Figure 1 Figure 1: Modal structure of symmetric and symmetry broken semiconductor metasurfaces. (a) Sketch of a symmetric metasurface. A mode characterized by out-of-plane oriented magnetic dipole moments can be excited for oblique-incidence excitation only. The inset shows the coordinate system that denotes the directions and the angles of incidence as impliedmore » in the calculations. (b,c) Calculated absorbance spectra of the metasurface depicted in (a) for s- (TE) and p- (TM) polarized incidence light, respectively, for a variation of the polar angle $θ$ (the azimuthal angle $φ$ is kept equal to 0°). The out-of-plane magnetic dipole mode, which appears as a narrow band of strong absorption in (b) can only be coupled for s-polarized light. Also note that the absorption feature of this band vanishes for normal incidence. (d) Sketch of a symmetry-broken semiconductor metasurface. The symmetry break allows for excitation of the out-of-plane magnetic dipole mode at normal incidence. (e,f) Calculated absorbance spectra of the metasurface depicted in (d) for s- and p-polarized incidence light, respectively, for a variation of the polar angle $θ$ (the azimuthal angle $φ$ is kept equal to 0°). The out-of-plane magnetic dipole mode, now appears as a narrow band of strong absorption both for s- and p-polarized light. Additionally, the absorption feature of this band persists for normal incidence.« less

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