Ion mass dependence of irradiation-induced damage accumulation in KTaO3

Velişa, Gihan; Wendler, Elke; Wang, Liang -Ling; Zhang, Yanwen; Weber, William J.

doi:10.1007/s10853-018-2864-5

Title: Ion mass dependence of irradiation-induced damage accumulation in KTaO₃

Abstract

Damage production and amorphization resulting from the interaction of medium-energy (from 40 to 480 keV) noble-gas ions (from He to Kr) with potassium tantalate (KTaO₃) are determined using ion channeling measurements. A disorder accumulation model has been fit to the maximum damage concentration versus ion fluence to extract the cross sections for direct-impact and defect-stimulated amorphization, and the results indicate that defect-stimulated amorphization is the dominant mechanism. These cross sections exhibit a strong dependence on the calculated cross sections for displacing lattice atoms, indicating a dominant contribution of nuclear interactions to the defect production and amorphization processes under the irradiation conditions used in this study. Furthermore, these experimental findings, along with the model fits, suggest that the difference in recoil spectra between He and the other heavier ions may be the main driving force for the decreased damage efficiency observed for He ions, which results in a reduced rate of damage accumulation.

Authors:

^[1];

^[2];

^[3];

^[1];

^[4]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Friedrich-Schiller-Univ. Jena, Jena (Germany)
Univ. of Jinan, Jinan (People's Republic of China); Shandong Univ., Jinan (People's Republic of China)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); The Univ. of Tennessee, Knoxville, TN (United States)

Publication Date:: Wed Aug 29 00:00:00 EDT 2018

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1479764

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Materials Science

Additional Journal Information:: Journal Volume: 54; Journal Issue: 1; Journal ID: ISSN 0022-2461

Publisher:: Springer

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Velişa, Gihan, Wendler, Elke, Wang, Liang -Ling, Zhang, Yanwen, and Weber, William J. Ion mass dependence of irradiation-induced damage accumulation in KTaO3.  United States: N. p., 2018. 
Web.  doi:10.1007/s10853-018-2864-5.

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                    Velişa, Gihan, Wendler, Elke, Wang, Liang -Ling, Zhang, Yanwen, & Weber, William J. Ion mass dependence of irradiation-induced damage accumulation in KTaO3.  United States.  https://doi.org/10.1007/s10853-018-2864-5

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                    Velişa, Gihan, Wendler, Elke, Wang, Liang -Ling, Zhang, Yanwen, and Weber, William J. Wed .  
"Ion mass dependence of irradiation-induced damage accumulation in KTaO3".  United States.  https://doi.org/10.1007/s10853-018-2864-5.  https://www.osti.gov/servlets/purl/1479764.

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@article{osti_1479764,

  title        = {Ion mass dependence of irradiation-induced damage accumulation in KTaO3},

  author       = {Velişa, Gihan and Wendler, Elke and Wang, Liang -Ling and Zhang, Yanwen and Weber, William J.},

  abstractNote = {Damage production and amorphization resulting from the interaction of medium-energy (from 40 to 480 keV) noble-gas ions (from He to Kr) with potassium tantalate (KTaO3) are determined using ion channeling measurements. A disorder accumulation model has been fit to the maximum damage concentration versus ion fluence to extract the cross sections for direct-impact and defect-stimulated amorphization, and the results indicate that defect-stimulated amorphization is the dominant mechanism. These cross sections exhibit a strong dependence on the calculated cross sections for displacing lattice atoms, indicating a dominant contribution of nuclear interactions to the defect production and amorphization processes under the irradiation conditions used in this study. Furthermore, these experimental findings, along with the model fits, suggest that the difference in recoil spectra between He and the other heavier ions may be the main driving force for the decreased damage efficiency observed for He ions, which results in a reduced rate of damage accumulation.},

  doi          = {10.1007/s10853-018-2864-5},

  journal      = {Journal of Materials Science},

  number       = 1,

  volume       = 54,

  place        = {United States},

  year         = {Wed Aug 29 00:00:00 EDT 2018},

  month        = {Wed Aug 29 00:00:00 EDT 2018}

}

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Works referenced in this record:

Radiation damage in ion-irradiated yttria-stabilized cubic zirconia single crystals
journal, September 2003

Thomé, L.; Fradin, J.; Jagielski, J.
The European Physical Journal Applied Physics, Vol. 24, Issue 1
DOI: 10.1051/epjap:2003060

Effects of ionizing and displacive irradiation on several perovskite-structure oxides
journal, May 1998

Meldrum, A.; Boatner, L. A.; Ewing, R. C.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 141, Issue 1-4
DOI: 10.1016/S0168-583X(98)00075-5

Implantation damage formation in a-, c- and m-plane GaN
journal, January 2017

Lorenz, K.; Wendler, E.; Redondo-Cubero, A.
Acta Materialia, Vol. 123
DOI: 10.1016/j.actamat.2016.10.020

Ion‐implanted optical waveguides in KTaO ₃
journal, January 1992

Wong, J. Y. C.; Zhang, L.; Kakarantzas, G.
Journal of Applied Physics, Vol. 71, Issue 1
DOI: 10.1063/1.350684

Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation
journal, April 1986

Hecking, N.; Heidemann, K. F.; Te Kaat, E.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 15, Issue 1-6
DOI: 10.1016/0168-583X(86)90407-6

Coexistence of two-dimensional and three-dimensional Shubnikov–de Haas oscillations in Ar $^{+}$ -irradiated KTaO $_{3}$
journal, August 2013

Harashima, S.; Bell, C.; Kim, M.
Physical Review B, Vol. 88, Issue 8
DOI: 10.1103/PhysRevB.88.085102

Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors
journal, May 2012

Wendler, E.; Wendler, L.
Applied Physics Letters, Vol. 100, Issue 19, Article No. 192108
DOI: 10.1063/1.4711810

Models and mechanisms of irradiation-induced amorphization in ceramics
journal, May 2000

Weber, W. J.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 166-167
DOI: 10.1016/S0168-583X(99)00643-6

Ion implantation in semiconductors—Part II: Damage production and annealing
journal, January 1972

Gibbons, J. F.
Proceedings of the IEEE, Vol. 60, Issue 9
DOI: 10.1109/PROC.1972.8854

Some Transport Properties of Oxygen-Deficient Single-Crystal Potassium Tantalate (KTa $O_{3}$ )
journal, March 1965

Wemple, S. H.
Physical Review, Vol. 137, Issue 5A
DOI: 10.1103/PhysRev.137.A1575

Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation
journal, December 2017

Zhang, Yanwen; Xue, Haizhou; Zarkadoula, Eva
Current Opinion in Solid State and Materials Science, Vol. 21, Issue 6
DOI: 10.1016/j.cossms.2017.09.003

Irradiation behavior of SrTiO[sub 3] at temperatures close to the critical temperature for amorphization
journal, January 2006

Zhang, Y.; Wang, C. M.; Engelhard, M. H.
Journal of Applied Physics, Vol. 100, Issue 11
DOI: 10.1063/1.2399932

Field-effect transistor based on KTaO3 perovskite
journal, May 2004

Ueno, K.; Inoue, I. H.; Yamada, T.
Applied Physics Letters, Vol. 84, Issue 19
DOI: 10.1063/1.1703841

Discovery of superconductivity in KTaO3 by electrostatic carrier doping
journal, May 2011

Ueno, K.; Nakamura, S.; Shimotani, H.
Nature Nanotechnology, Vol. 6, Issue 7
DOI: 10.1038/nnano.2011.78

The radiation-induced crystalline-to-amorphous transition in zircon
journal, March 1994

Weber, William J.; Ewing, Rodney C.; Wang, Lu-Min
Journal of Materials Research, Vol. 9, Issue 3
DOI: 10.1557/JMR.1994.0688

Response of strontium titanate to ion and electron irradiation
journal, May 2009

Zhang, Y.; Lian, J.; Zhu, Z.
Journal of Nuclear Materials, Vol. 389, Issue 2
DOI: 10.1016/j.jnucmat.2009.02.014

Radiation damage in ZnO ion implanted at 15K
journal, August 2009

Wendler, E.; Bilani, O.; Gärtner, K.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 267, Issue 16
DOI: 10.1016/j.nimb.2009.05.031

Ion mass and temperature dependence of damage production in ion implanted InP
journal, December 1997

Wendler, E.; Opfermann, T.; Gaiduk, P. I.
Journal of Applied Physics, Vol. 82, Issue 12
DOI: 10.1063/1.366499

High-level damage saturation below amorphisation in ion implanted β-Ga2O3
journal, July 2016

Wendler, Elke; Treiber, Enrico; Baldauf, Julia
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 379
DOI: 10.1016/j.nimb.2016.03.044

Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO3
journal, May 2018

Velişa, Gihan; Wendler, Elke; Xue, Haizhou
Acta Materialia, Vol. 149
DOI: 10.1016/j.actamat.2018.02.038

Review of dynamic recovery effects on ion irradiation damage in ionic-covalent materials
journal, April 2012

Weber, William J.; Zhang, Yanwen; Wang, Lumin
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 277
DOI: 10.1016/j.nimb.2011.12.043

Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC
journal, April 2004

Zhang, Y.; Weber, W. J.; Jiang, W.
Journal of Applied Physics, Vol. 95, Issue 8
DOI: 10.1063/1.1666974

Amorphization and recrystallization of the ABO3 oxides
journal, February 2002

Meldrum, A.; Boatner, L. A.; Weber, W. J.
Journal of Nuclear Materials, Vol. 300, Issue 2-3
DOI: 10.1016/S0022-3115(01)00733-4

Damage evolution on Sm and O sublattices in Au-implanted samarium titanate pyrochlore
journal, March 2004

Zhang, Y.; Weber, W. J.; Shutthanandan, V.
Journal of Applied Physics, Vol. 95, Issue 5
DOI: 10.1063/1.1644891

The Stopping and Range of Ions in Matter
book, January 1985

Ziegler, James F.; Biersack, Jochen P.
Treatise on Heavy-Ion Science
DOI: 10.1007/978-1-4615-8103-1_3

Effects of dynamic recovery on amorphization kinetics in 6H-SiC
journal, June 2008

Weber, William J.; Wang, Lumin; Zhang, Yanwen
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 266, Issue 12-13
DOI: 10.1016/j.nimb.2008.03.119

Strength and plasticity of nanolaminated materials
journal, July 2016

Wang, Jian; Zhou, Qing; Shao, Shuai
Materials Research Letters, Vol. 5, Issue 1
DOI: 10.1080/21663831.2016.1225321

Superconductivity at the double
journal, July 2011

Prassides, Kosmas
Nature Nanotechnology, Vol. 6, Issue 7
DOI: 10.1038/nnano.2011.104

Electronic structure modification of the ${KTaO}_{3}$ single-crystal surface by ${Ar}^{+}$ bombardment
journal, September 2017

Wadehra, Neha; Tomar, Ruchi; Halder, Soumyadip
Physical Review B, Vol. 96, Issue 11
DOI: 10.1103/PhysRevB.96.115423

In-cascade ionization effects on defect production in 3C silicon carbide
journal, June 2017

Xue, Haizhou; Zhang, Yanwen; Weber, William J.
Materials Research Letters, Vol. 5, Issue 7
DOI: 10.1080/21663831.2017.1334241

Works referencing / citing this record:

Amorphization kinetics in strontium titanate at 16 and 300 K under argon ion irradiation
journal, January 2019

Velişa, Gihan; Wendler, Elke; Wang, Liang-Ling
Journal of Materials Science, Vol. 54, Issue 8
DOI: 10.1007/s10853-018-03313-7

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Title: Ion mass dependence of irradiation-induced damage accumulation in KTaO3

Abstract

Citation Formats

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Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation journal, April 1986

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Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation journal, December 2017

Irradiation behavior of SrTiO[sub 3] at temperatures close to the critical temperature for amorphization journal, January 2006

Field-effect transistor based on KTaO3 perovskite journal, May 2004

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Title: Ion mass dependence of irradiation-induced damage accumulation in KTaO₃

Radiation damage in ion-irradiated yttria-stabilized cubic zirconia single crystals
journal, September 2003

Effects of ionizing and displacive irradiation on several perovskite-structure oxides
journal, May 1998

Implantation damage formation in a-, c- and m-plane GaN
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Ion‐implanted optical waveguides in KTaO ₃
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Model of temperature dependent defect interaction and amorphization in crystalline silicon during ion irradiation
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Coexistence of two-dimensional and three-dimensional Shubnikov–de Haas oscillations in Ar $^{+}$ -irradiated KTaO $_{3}$
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Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors
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Models and mechanisms of irradiation-induced amorphization in ceramics
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