Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography
Abstract
Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting materials at sub-nm length scales and 10 ppm chemical sensitivity. This has enabled APT to be the best technique for nanoscale detection of dopant distributions and low levels of chemical segregation at interfaces, which are both important for semiconductor processing; however, the accuracy of measured interfacial profiles is typically compromised by aberrations. Interfacial profiles in APT data will vary with respect to different interfacial combinations, especially when the evaporation field between two materials is drastically different. Here, the ability of APT to measure SiGe/Si/SiGe interfacial profiles is tested with an 8 nm Si well embedded in SiGe. The APT measurements are compared to those measured using scanning transmission electron microscopy (STEM) to evaluate reconstruction and post-reconstruction processing methods to appropriately measure interfacial profiles using APT. Without post-APT reconstruction processing, the measured Si/SiGe interfacial widths between APT and STEM match poorly, but after applying the z-redistribution algorithm, the interfacial profiles are in good agreement. These results indicate that APT can be used to accurately identify SiGe/Si/SiGe interfacial profiles after application of the z-redistribution algorithm, which will greatly impact the synergy between growth and characterization of semiconductor devices using Si/SiGemore »
- Authors:
-
[1];
[1];
[1]
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- HRL Laboratories, LLC, Malibu, CA (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1474844
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 21; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley-VCH
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Si/SiGe; atom probe tomography; z-redistribution; scanning transmission electron microscopy; interfacial measurements
Citation Formats
Dyck, Ondrej E., Leonard, Donovan N., Edge, Lisa, Jackson, Clayton, Pritchett, Emily J., Deelman, Peter W., and Poplawsky, Jonathan D. Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography. United States: N. p., 2017.
Web. doi:10.1002/admi.201700622.
Dyck, Ondrej E., Leonard, Donovan N., Edge, Lisa, Jackson, Clayton, Pritchett, Emily J., Deelman, Peter W., & Poplawsky, Jonathan D. Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography. United States. https://doi.org/10.1002/admi.201700622
Dyck, Ondrej E., Leonard, Donovan N., Edge, Lisa, Jackson, Clayton, Pritchett, Emily J., Deelman, Peter W., and Poplawsky, Jonathan D. Fri .
"Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography". United States. https://doi.org/10.1002/admi.201700622. https://www.osti.gov/servlets/purl/1474844.
@article{osti_1474844,
title = {Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography},
author = {Dyck, Ondrej E. and Leonard, Donovan N. and Edge, Lisa and Jackson, Clayton and Pritchett, Emily J. and Deelman, Peter W. and Poplawsky, Jonathan D.},
abstractNote = {Pulsed laser atom probe tomography (APT) has enabled the investigation of semiconducting materials at sub-nm length scales and 10 ppm chemical sensitivity. This has enabled APT to be the best technique for nanoscale detection of dopant distributions and low levels of chemical segregation at interfaces, which are both important for semiconductor processing; however, the accuracy of measured interfacial profiles is typically compromised by aberrations. Interfacial profiles in APT data will vary with respect to different interfacial combinations, especially when the evaporation field between two materials is drastically different. Here, the ability of APT to measure SiGe/Si/SiGe interfacial profiles is tested with an 8 nm Si well embedded in SiGe. The APT measurements are compared to those measured using scanning transmission electron microscopy (STEM) to evaluate reconstruction and post-reconstruction processing methods to appropriately measure interfacial profiles using APT. Without post-APT reconstruction processing, the measured Si/SiGe interfacial widths between APT and STEM match poorly, but after applying the z-redistribution algorithm, the interfacial profiles are in good agreement. These results indicate that APT can be used to accurately identify SiGe/Si/SiGe interfacial profiles after application of the z-redistribution algorithm, which will greatly impact the synergy between growth and characterization of semiconductor devices using Si/SiGe interfaces.},
doi = {10.1002/admi.201700622},
journal = {Advanced Materials Interfaces},
number = 21,
volume = 4,
place = {United States},
year = {Fri Sep 29 00:00:00 EDT 2017},
month = {Fri Sep 29 00:00:00 EDT 2017}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 24 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
journal, December 2000
- Dehlinger, G.
- Science, Vol. 290, Issue 5500
Si/SiGe heterostructures: from material and physics to devices and circuits
journal, September 2004
- Paul, Douglas J.
- Semiconductor Science and Technology, Vol. 19, Issue 10
Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder
journal, February 2007
- Kharche, Neerav; Prada, Marta; Boykin, Timothy B.
- Applied Physics Letters, Vol. 90, Issue 9
Composition mapping in InGaN by scanning transmission electron microscopy
journal, July 2011
- Rosenauer, Andreas; Mehrtens, Thorsten; Müller, Knut
- Ultramicroscopy, Vol. 111, Issue 8
Wide-Field-of-View Atom Probe Reconstruction
journal, July 2009
- Geiser, Bp; Larson, Dj; Oltman, E.
- Microscopy and Microanalysis, Vol. 15, Issue S2
A general protocol for the reconstruction of 3D atom probe data
journal, March 1995
- Bas, P.; Bostel, A.; Deconihout, B.
- Applied Surface Science, Vol. 87-88
Gradient energy, interfacial energy and interface width
journal, April 2012
- Ardell, Alan J.
- Scripta Materialia, Vol. 66, Issue 7
Quantitative composition determination at the atomic level using model-based high-angle annular dark field scanning transmission electron microscopy
journal, February 2014
- Martinez, G. T.; Rosenauer, A.; De Backer, A.
- Ultramicroscopy, Vol. 137
Efficient sampling for three-dimensional atom probe microscopy data
journal, May 2003
- Hellman, Olof C.; Rivage, John Blatz du; Seidman, David N.
- Ultramicroscopy, Vol. 95
Surface roughness at the Si(100)- interface
journal, December 1985
- Goodnick, S. M.; Ferry, D. K.; Wilmsen, C. W.
- Physical Review B, Vol. 32, Issue 12
Improvement of multilayer analyses with a three-dimensional atom probe
journal, May 2004
- Vurpillot, Francois; Larson, David; Cerezo, Alfred
- Surface and Interface Analysis, Vol. 36, Issue 56
Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy
journal, December 1997
- Kim, H.; Taylor, N.; Abelson, J. R.
- Journal of Applied Physics, Vol. 82, Issue 12
Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells
journal, March 2012
- Jiang, Zhengping; Kharche, Neerav; Boykin, Timothy
- Applied Physics Letters, Vol. 100, Issue 10
Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy
journal, January 2010
- Luna, E.; Satpati, B.; Rodriguez, J. B.
- Applied Physics Letters, Vol. 96, Issue 2
Trajectory overlaps and local magnification in three-dimensional atom probe
journal, May 2000
- Vurpillot, F.; Bostel, A.; Blavette, D.
- Applied Physics Letters, Vol. 76, Issue 21
The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si 0.7 Ge 0.3 films by rapid thermal chemical vapor deposition
journal, October 2012
- Li, Jiun-Yun; Huang, Chiao-Ti; Sturm, James C.
- Applied Physics Letters, Vol. 101, Issue 14
Near and mid infrared silicon/germanium based photodetection
journal, May 1998
- Presting, Hartmut
- Thin Solid Films, Vol. 321, Issue 1-2
Coherent singlet-triplet oscillations in a silicon-based double quantum dot
journal, January 2012
- Maune, B. M.; Borselli, M. G.; Huang, B.
- Nature, Vol. 481, Issue 7381
Surface segregation during molecular beam epitaxy: the site-blocking effects of surfactant atoms
journal, November 1996
- Xie, M. -H.; Zhang, J.; Lees, A.
- Surface Science, Vol. 367, Issue 2
Direction et distance d'analyse à la sonde atomique
journal, January 1982
- Blavette, D.; Sarrau, J. M.; Bostel, A.
- Revue de Physique Appliquée, Vol. 17, Issue 7
On the Use of Simulated Field-Evaporated Specimen Apex Shapes in Atom Probe Tomography Data Reconstruction
journal, October 2012
- Larson, David J.; Geiser, Brian P.; Prosa, Ty J.
- Microscopy and Microanalysis, Vol. 18, Issue 5
In situ site-specific specimen preparation for atom probe tomography
journal, February 2007
- Thompson, K.; Lawrence, D.; Larson, D. J.
- Ultramicroscopy, Vol. 107, Issue 2-3
Comparison of atom probe compositional fidelity across thin film interfaces
journal, January 2014
- Brons, J. G.; Herzing, A. A.; Henry, K. T.
- Thin Solid Films, Vol. 551
Quantitative characterization of the interface roughness of (GaIn)As quantum wells by high resolution STEM
journal, December 2015
- Han, H.; Beyer, A.; Jandieri, K.
- Micron, Vol. 79
Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
journal, March 2009
- Luna, E.; Ishikawa, F.; Satpati, B.
- Journal of Crystal Growth, Vol. 311, Issue 7
Silicon quantum electronics
journal, July 2013
- Zwanenburg, Floris A.; Dzurak, Andrew S.; Morello, Andrea
- Reviews of Modern Physics, Vol. 85, Issue 3
Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
journal, October 1998
- Rommel, Sean L.; Dillon, Thomas E.; Dashiell, M. W.
- Applied Physics Letters, Vol. 73, Issue 15
Atomistic processes of surface segregation during SiGe MBE growth
journal, December 1992
- Jesson, D. E.; Pennycook, S. J.; Baribeau, J. -M.
- Thin Solid Films, Vol. 222, Issue 1-2
Indium distribution at the interfaces of (Ga,In)(N,As)∕GaAs quantum wells
journal, April 2008
- Luna, E.; Ishikawa, F.; Batista, P. D.
- Applied Physics Letters, Vol. 92, Issue 14
Advances in the calibration of atom probe tomographic reconstruction
journal, February 2009
- Gault, Baptiste; Moody, Michael P.; de Geuser, Frederic
- Journal of Applied Physics, Vol. 105, Issue 3
Strained p-Channel FinFETs With Extended $\Pi$-Shaped Silicon–Germanium Source and Drain Stressors
journal, October 2007
- Tan, Kian-Ming; Liow, Tsung-Yang; Lee, Rinus T. P.
- IEEE Electron Device Letters, Vol. 28, Issue 10
Effect of analysis direction on the measurement of interfacial mixing in thin metal layers with atom probe tomography
journal, May 2011
- Larson, D. J.; Prosa, T. J.; Geiser, B. P.
- Ultramicroscopy, Vol. 111, Issue 6
Free Energy of a Nonuniform System. I. Interfacial Free Energy
journal, February 1958
- Cahn, John W.; Hilliard, John E.
- The Journal of Chemical Physics, Vol. 28, Issue 2
Works referencing / citing this record:
Strategies for Analyzing Noncommon‐Atom Heterovalent Interfaces: The Case of CdTe‐on‐InSb
journal, December 2019
- Luna, Esperanza; Trampert, Achim; Lu, Jing
- Advanced Materials Interfaces, Vol. 7, Issue 3