Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

Abstract

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of ±15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1]
+ Show Author Affiliations
  1. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
  2. Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); Defense Advanced Research Projects Agency (DARPA) (United States)
OSTI Identifier:
1472261
Report Number(s):
SAND-2018-9661J
Journal ID: ISSN 2045-2322; 667568
Grant/Contract Number:  
NA0003525; D13AP00055
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 8; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronic devices; inorganic LEDs

Citation Formats

Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, and Feezell, Daniel F. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes. United States: N. p., 2018. Web. doi:10.1038/s41598-017-18833-6.
Copy to clipboard
Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, & Feezell, Daniel F. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes. United States. https://doi.org/10.1038/s41598-017-18833-6
Copy to clipboard
Nami, Mohsen, Stricklin, Isaac E., DaVico, Kenneth M., Mishkat-Ul-Masabih, Saadat, Rishinaramangalam, Ashwin K., Brueck, S. R. J., Brener, Igal, and Feezell, Daniel F. Thu . "Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes". United States. https://doi.org/10.1038/s41598-017-18833-6. https://www.osti.gov/servlets/purl/1472261.
Copy to clipboard
@article{osti_1472261,
title = {Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes},
author = {Nami, Mohsen and Stricklin, Isaac E. and DaVico, Kenneth M. and Mishkat-Ul-Masabih, Saadat and Rishinaramangalam, Ashwin K. and Brueck, S. R. J. and Brener, Igal and Feezell, Daniel F.},
abstractNote = {In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of ±15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.},
doi = {10.1038/s41598-017-18833-6},
journal = {Scientific Reports},
number = ,
volume = 8,
place = {United States},
year = {Thu Jan 11 00:00:00 EST 2018},
month = {Thu Jan 11 00:00:00 EST 2018}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1038/s41598-017-18833-6
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 57 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy
journal, January 2008

  • Kishino, K.; Hoshino, T.; Ishizawa, S.
  • Electronics Letters, Vol. 44, Issue 13
  • DOI: 10.1049/el:20081323

Opto-chemical sensor system for the detection of H2 and hydrocarbons based on InGaN/GaN nanowires
journal, October 2012

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
journal, May 2013

  • Albert, S.; Bengoechea-Encabo, A.; Kong, X.
  • Applied Physics Letters, Vol. 102, Issue 18
  • DOI: 10.1063/1.4804293

Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
journal, April 1997

  • Yoshizawa, Masaki; Kikuchi, Akihiko; Mori, Masashi
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 4B
  • DOI: 10.1143/JJAP.36.L459

GaN nanowire ultraviolet photodetector with a graphene transparent contact
journal, November 2013

  • Babichev, A. V.; Zhang, H.; Lavenus, P.
  • Applied Physics Letters, Vol. 103, Issue 20
  • DOI: 10.1063/1.4829756

Optical properties of Ag-coated GaN/InGaN axial and core–shell nanowire light-emitting diodes
journal, January 2015

Dislocation Filtering in GaN Nanostructures
journal, May 2010

  • Colby, Robert; Liang, Zhiwen; Wildeson, Isaac H.
  • Nano Letters, Vol. 10, Issue 5
  • DOI: 10.1021/nl9037455

Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
journal, July 2006

  • Huang, Chi-Feng; Tang, Tsung-Yi; Huang, Jeng-Jie
  • Applied Physics Letters, Vol. 89, Issue 5
  • DOI: 10.1063/1.2335384

Structural and antireflective characteristics of catalyst-free GaN nanostructures on GaN/sapphire template for solar cell applications
journal, April 2010

  • Park, C. Y.; Lim, J. M.; Yu, J. S.
  • Applied Physics Letters, Vol. 96, Issue 15
  • DOI: 10.1063/1.3386538

Gallium Nitride Nanowire Nanodevices
journal, February 2002

  • Huang, Yu; Duan, Xiangfeng; Cui, Yi
  • Nano Letters, Vol. 2, Issue 2
  • DOI: 10.1021/nl015667d

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
journal, July 2011

  • Zhao, Yuji; Tanaka, Shinichi; Pan, Chih-Chien
  • Applied Physics Express, Vol. 4, Issue 8
  • DOI: 10.1143/APEX.4.082104

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
journal, November 2009

Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
journal, July 2012

  • Kohno, Takakazu; Sudo, Yasuhiro; Yamauchi, Masaki
  • Japanese Journal of Applied Physics, Vol. 51, Issue 7R
  • DOI: 10.7567/JJAP.51.072102

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy
journal, December 2016

Photonic crystal LEDs - designing light extraction
journal, April 2009

  • Wiesmann, C.; Bergenek, K.; Linder, N.
  • Laser & Photonics Review, Vol. 3, Issue 3
  • DOI: 10.1002/lpor.200810053

Label-Free Dual Sensing of DNA Molecules Using GaN Nanowires
journal, January 2009

  • Chen, Chin-Pei; Ganguly, Abhijit; Wang, Chen-Hao
  • Analytical Chemistry, Vol. 81, Issue 1
  • DOI: 10.1021/ac800986q

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
journal, April 2003

  • Shen, Y. C.; Wierer, J. J.; Krames, M. R.
  • Applied Physics Letters, Vol. 82, Issue 14
  • DOI: 10.1063/1.1566098

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
journal, December 2015

  • Brubaker, Matt D.; Duff, Shannon M.; Harvey, Todd E.
  • Crystal Growth & Design, Vol. 16, Issue 2
  • DOI: 10.1021/acs.cgd.5b00910

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
journal, June 2010

  • Ling, Shih-Chun; Lu, Tien-Chang; Chang, Shih-Pang
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3449557

Efficiency of light emission in high aluminum content AlGaN quantum wells
journal, April 2009

  • Shatalov, Max; Yang, Jinwei; Sun, Wenhong
  • Journal of Applied Physics, Vol. 105, Issue 7
  • DOI: 10.1063/1.3103321

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
journal, February 2009

  • Schubert, Martin F.; Xu, Jiuru; Dai, Qi
  • Applied Physics Letters, Vol. 94, Issue 8
  • DOI: 10.1063/1.3089691

III-Nitride full-scale high-resolution microdisplays
journal, July 2011

  • Day, Jacob; Li, J.; Lie, D. Y. C.
  • Applied Physics Letters, Vol. 99, Issue 3
  • DOI: 10.1063/1.3615679

GaN nanowire tips for nanoscale atomic force microscopy
journal, April 2017

  • Behzadirad, Mahmoud; Nami, Mohsen; Rishinaramagalam, Ashwin K.
  • Nanotechnology, Vol. 28, Issue 20
  • DOI: 10.1088/1361-6528/aa6c0b

Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate
journal, July 2009

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
journal, May 2004

  • Wierer, J. J.; Krames, M. R.; Epler, J. E.
  • Applied Physics Letters, Vol. 84, Issue 19
  • DOI: 10.1063/1.1738934

Blue-green and white color tuning of monolithic light emitting diodes
journal, October 2010

  • Damilano, B.; Demolon, P.; Brault, J.
  • Journal of Applied Physics, Vol. 108, Issue 7
  • DOI: 10.1063/1.3490895

Threading defect elimination in GaN nanowires
journal, June 2011

  • Hersee, Stephen D.; Rishinaramangalam, Ashwin K.; Fairchild, Michael N.
  • Journal of Materials Research, Vol. 26, Issue 17
  • DOI: 10.1557/jmr.2011.112

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
journal, June 2010

  • Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3443734

34 Gbit/s visible optical wireless transmission based on RGB LED
journal, January 2012

  • Cossu, G.; Khalid, A. M.; Choudhury, P.
  • Optics Express, Vol. 20, Issue 26
  • DOI: 10.1364/oe.20.00b501

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy
journal, October 2013

  • Howell, Sarah L.; Padalkar, Sonal; Yoon, KunHo
  • Nano Letters, Vol. 13, Issue 11
  • DOI: 10.1021/nl402331u

Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes
journal, March 2014

  • Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung
  • Applied Physics Letters, Vol. 104, Issue 9
  • DOI: 10.1063/1.4867647

Crystallographic alignment of high-density gallium nitride nanowire arrays
journal, July 2004

  • Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng
  • Nature Materials, Vol. 3, Issue 8, p. 524-528
  • DOI: 10.1038/nmat1177

GaN nanodiscs embedded in nanowires as optochemical transducers
journal, May 2011

Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices
journal, October 2014

  • Rishinaramangalam, Ashwin K.; Ul Masabih, Saadat Mishkat; Fairchild, Michael N.
  • Journal of Electronic Materials, Vol. 44, Issue 5
  • DOI: 10.1007/s11664-014-3456-z

High-brightness low-power consumption microLED arrays
conference, March 2016

  • Bonar, James R.; Valentine, Gareth J.; Gong, Zheng
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2210931

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
journal, August 2010

  • Rangel, Elizabeth; Matioli, Elison; Chen, Hung-Tse
  • Applied Physics Letters, Vol. 97, Issue 6
  • DOI: 10.1063/1.3480421

Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes
journal, April 2016

  • Mohajerani, Matin Sadat; Müller, Marcus; Hartmann, Jana
  • Japanese Journal of Applied Physics, Vol. 55, Issue 5S
  • DOI: 10.7567/JJAP.55.05FJ09

On the origin of IQE-‘droop’ in InGaN LEDs
journal, May 2009

  • Laubsch, Ansgar; Sabathil, Matthias; Bergbauer, Werner
  • physica status solidi (c), Vol. 6, Issue S2
  • DOI: 10.1002/pssc.200880950

Selective-area growth of thin GaN nanowires by MOCVD
journal, October 2012

Functionalized GaN nanowire-based electrode for direct label-free voltammetric detection of DNA hybridization
journal, January 2009

  • Ganguly, Abhijit; Chen, Chin-Pei; Lai, Yao-Tong
  • Journal of Materials Chemistry, Vol. 19, Issue 7
  • DOI: 10.1039/b816556d

Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display
journal, January 2017

  • Kang, Chang-Mo; Kong, Duk-Jo; Shim, Jae-Phil
  • Optics Express, Vol. 25, Issue 3
  • DOI: 10.1364/OE.25.002489

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy
journal, December 2016

High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
journal, March 2015

  • Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander
  • Nano Letters, Vol. 15, Issue 4
  • DOI: 10.1021/nl504447j

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
journal, February 2011

  • Rangel, Elizabeth; Matioli, Elison; Choi, Yong-Seok
  • Applied Physics Letters, Vol. 98, Issue 8
  • DOI: 10.1063/1.3554417

Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
journal, November 2010

  • Li, Qiming; Wang, George T.
  • Applied Physics Letters, Vol. 97, Issue 18
  • DOI: 10.1063/1.3513345

Ordered arrays of bottom-up III-nitride core-shell nanostructures
conference, August 2015

  • Rishinaramangalam, Ashwin K.; Nami, Mohsen; Bryant, Benjamin N.
  • SPIE Nanoscience + Engineering, SPIE Proceedings
  • DOI: 10.1117/12.2191726

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array
journal, August 2013

  • Riley, James R.; Padalkar, Sonal; Li, Qiming
  • Nano Letters, Vol. 13, Issue 9
  • DOI: 10.1021/nl4021045

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
journal, February 2009

  • Schubert, Martin F.; Xu, Jiuru; Dai, Qi
  • Applied Physics Letters, Vol. 94, Issue 8
  • DOI: 10.1063/1.3089691

Visible-Color-Tunable Light-Emitting Diodes
journal, June 2011

  • Hong, Young Joon; Lee, Chul-Ho; Yoon, Aram
  • Advanced Materials, Vol. 23, Issue 29
  • DOI: 10.1002/adma.201100806

Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles
journal, July 2010

SiO 2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes
journal, July 2016

  • Lim, Wantae; Kum, Hyun; Choi, Young-Jin
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 4
  • DOI: 10.1116/1.4959027

Recombination of free and bound excitons in GaN
journal, September 2008

  • Monemar, B.; Paskov, P. P.; Bergman, J. P.
  • physica status solidi (b), Vol. 245, Issue 9
  • DOI: 10.1002/pssb.200844059

Three-dimensional GaN for semipolar light emitters
journal, October 2010

  • Wunderer, T.; Feneberg, M.; Lipski, F.
  • physica status solidi (b), Vol. 248, Issue 3
  • DOI: 10.1002/pssb.201046352

Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
journal, July 2006

  • Huang, Chi-Feng; Tang, Tsung-Yi; Huang, Jeng-Jie
  • Applied Physics Letters, Vol. 89, Issue 5
  • DOI: 10.1063/1.2335384

Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
journal, October 2004

  • Qian, Fang; Li, Yat; Gradečak, Silvija
  • Nano Letters, Vol. 4, Issue 10
  • DOI: 10.1021/nl0487774

Blue-green and white color tuning of monolithic light emitting diodes
journal, October 2010

  • Damilano, B.; Demolon, P.; Brault, J.
  • Journal of Applied Physics, Vol. 108, Issue 7
  • DOI: 10.1063/1.3490895

The Controlled Growth of GaN Nanowires
journal, August 2006

  • Hersee, Stephen D.; Sun, Xinyu; Wang, Xin
  • Nano Letters, Vol. 6, Issue 8
  • DOI: 10.1021/nl060553t

High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy
journal, January 2016

  • Hartmann, Jana; Steib, Frederik; Zhou, Hao
  • Crystal Growth & Design, Vol. 16, Issue 3
  • DOI: 10.1021/acs.cgd.5b01598

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
journal, December 1996

  • Chichibu, S.; Azuhata, T.; Sota, T.
  • Applied Physics Letters, Vol. 69, Issue 27
  • DOI: 10.1063/1.116981

What is LiFi?
journal, March 2016

Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition
journal, October 2012

Direct comparison of catalyst-free and catalyst-induced GaN nanowires
journal, July 2010

Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
journal, November 2009

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures
journal, August 2016

  • Nakajima, Yoshitake; Dapkus, P. Daniel
  • Applied Physics Letters, Vol. 109, Issue 8
  • DOI: 10.1063/1.4961580

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
journal, August 2000

  • Waltereit, P.; Brandt, O.; Trampert, A.
  • Nature, Vol. 406, Issue 6798
  • DOI: 10.1038/35022529

Opto-chemical sensor system for the detection of H2 and hydrocarbons based on InGaN/GaN nanowires
journal, October 2012

Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy
journal, January 2008

  • Kishino, K.; Hoshino, T.; Ishizawa, S.
  • Electronics Letters, Vol. 44, Issue 13
  • DOI: 10.1049/el:20081323

Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
journal, June 2010

  • Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3443734

III-Nitride full-scale high-resolution microdisplays
journal, July 2011

  • Day, Jacob; Li, J.; Lie, D. Y. C.
  • Applied Physics Letters, Vol. 99, Issue 3
  • DOI: 10.1063/1.3615679

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
journal, May 2013

  • Albert, S.; Bengoechea-Encabo, A.; Kong, X.
  • Applied Physics Letters, Vol. 102, Issue 18
  • DOI: 10.1063/1.4804293

GaN nanowire tips for nanoscale atomic force microscopy
journal, April 2017

  • Behzadirad, Mahmoud; Nami, Mohsen; Rishinaramagalam, Ashwin K.
  • Nanotechnology, Vol. 28, Issue 20
  • DOI: 10.1088/1361-6528/aa6c0b

Dislocation Filtering in GaN Nanostructures
journal, May 2010

  • Colby, Robert; Liang, Zhiwen; Wildeson, Isaac H.
  • Nano Letters, Vol. 10, Issue 5
  • DOI: 10.1021/nl9037455

GaN nanowire ultraviolet photodetector with a graphene transparent contact
journal, November 2013

  • Babichev, A. V.; Zhang, H.; Lavenus, P.
  • Applied Physics Letters, Vol. 103, Issue 20
  • DOI: 10.1063/1.4829756

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
journal, June 2010

  • Ling, Shih-Chun; Lu, Tien-Chang; Chang, Shih-Pang
  • Applied Physics Letters, Vol. 96, Issue 23
  • DOI: 10.1063/1.3449557

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
journal, May 2004

  • Wierer, J. J.; Krames, M. R.; Epler, J. E.
  • Applied Physics Letters, Vol. 84, Issue 19
  • DOI: 10.1063/1.1738934

Optical and Interferometric Lithography - Nanotechnology Enablers
journal, October 2005

Visible light communications: Challenges and possibilities
conference, September 2008

  • O'Brien, Dominic C.; Zeng, Lubin; Le-Minh, Hoa
  • 2008 IEEE 19th International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC)
  • DOI: 10.1109/PIMRC.2008.4699964

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
journal, December 2003

  • Watanabe, Satoshi; Yamada, Norihide; Nagashima, Masakazu
  • Applied Physics Letters, Vol. 83, Issue 24
  • DOI: 10.1063/1.1633672

Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns
journal, October 2006

  • Kawakami, Y.; Suzuki, S.; Kaneta, A.
  • Applied Physics Letters, Vol. 89, Issue 16
  • DOI: 10.1063/1.2363958

Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires
journal, January 2014

High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition
journal, August 1999

Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
journal, December 2008

  • Sekiguchi, Hiroto; Kishino, Katsumi; Kikuchi, Akihiko
  • Applied Physics Express, Vol. 1
  • DOI: 10.1143/APEX.1.124002

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures
journal, August 2016

  • Nakajima, Yoshitake; Dapkus, P. Daniel
  • Applied Physics Letters, Vol. 109, Issue 8
  • DOI: 10.1063/1.4961580

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
journal, February 2012

  • Nguyen, Hieu Pham Trung; Cui, Kai; Zhang, Shaofei
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl203860b

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
journal, December 1996

  • Chichibu, S.; Azuhata, T.; Sota, T.
  • Applied Physics Letters, Vol. 69, Issue 27
  • DOI: 10.1063/1.116981

Direct comparison of catalyst-free and catalyst-induced GaN nanowires
journal, July 2010

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
journal, January 2014

  • Jung, Byung Oh; Bae, Si-Young; Kato, Yoshihiro
  • CrystEngComm, Vol. 16, Issue 11
  • DOI: 10.1039/C3CE42266F

Semipolar InGaN/GaN nanostructure light-emitting diodes on c -plane sapphire
journal, February 2016

  • Rishinaramangalam, Ashwin K.; Nami, Mohsen; Fairchild, Michael N.
  • Applied Physics Express, Vol. 9, Issue 3
  • DOI: 10.7567/APEX.9.032101

Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth
journal, February 2014

  • Lin, Yen-Ting; Yeh, Ting-Wei; Nakajima, Yoshitake
  • Advanced Functional Materials, Vol. 24, Issue 21
  • DOI: 10.1002/adfm.201303671

Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale
journal, March 2013

  • Chan, Christopher C. S.; Reid, Benjamin P. L.; Taylor, Robert A.
  • Applied Physics Letters, Vol. 102, Issue 11
  • DOI: 10.1063/1.4795294

LED-Based Projection Systems
journal, September 2007

High-Power and High-Efficiency InGaN-Based Light Emitters
journal, January 2010

  • Laubsch, Ansgar; Sabathil, Matthias; Baur, Johannes
  • IEEE Transactions on Electron Devices, Vol. 57, Issue 1
  • DOI: 10.1109/TED.2009.2035538

Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes
journal, March 2014

  • Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung
  • Applied Physics Letters, Vol. 104, Issue 9
  • DOI: 10.1063/1.4867647

Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy
journal, October 2013

  • Howell, Sarah L.; Padalkar, Sonal; Yoon, KunHo
  • Nano Letters, Vol. 13, Issue 11
  • DOI: 10.1021/nl402331u

GaN nanodiscs embedded in nanowires as optochemical transducers
journal, May 2011

Miniaturized LEDs for flat-panel displays
conference, February 2017

  • Radauscher, Erich J.; Meitl, Matthew; Prevatte, Carl
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2252857

Reduction of reverse-leakage current in selective-area-grown GaN-based core-shell nanostructure LEDs using AlGaN layers: Reduction of reverse-leakage current in GaN-based LEDs
journal, December 2016

  • Rishinaramangalam, Ashwin K.; Nami, Mohsen; Shima, Darryl M.
  • physica status solidi (a), Vol. 214, Issue 5
  • DOI: 10.1002/pssa.201600776

High-Efficiency InGaN/GaN Core–Shell Nanorod Light-Emitting Diodes With Low-Peak Blueshift and Efficiency Droop
journal, March 2017

  • Tzou, An-Jye; Hsieh, Dan-Hua; Hong, Kuo-Bin
  • IEEE Transactions on Nanotechnology, Vol. 16, Issue 2
  • DOI: 10.1109/TNANO.2016.2642146

Carrier dynamics under two- and single-photon excitation in bulk GaN
journal, December 2011

  • Ščajev, Patrik; Jarašiūnas, Kęstutis; Okur, Serdal
  • physica status solidi (b), Vol. 249, Issue 3
  • DOI: 10.1002/pssb.201100307

Crystallographic alignment of high-density gallium nitride nanowire arrays
journal, July 2004

  • Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng
  • Nature Materials, Vol. 3, Issue 8, p. 524-528
  • DOI: 10.1038/nmat1177

High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
journal, March 2015

  • Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander
  • Nano Letters, Vol. 15, Issue 4
  • DOI: 10.1021/nl504447j

Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes
journal, May 2014

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
journal, December 2015

  • Brubaker, Matt D.; Duff, Shannon M.; Harvey, Todd E.
  • Crystal Growth & Design, Vol. 16, Issue 2
  • DOI: 10.1021/acs.cgd.5b00910

Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors
journal, January 2013

  • Kishino, Katsumi; Nagashima, Kazuya; Yamano, Kouji
  • Applied Physics Express, Vol. 6, Issue 1
  • DOI: 10.7567/APEX.6.012101

Carrier dynamics under two- and single-photon excitation in bulk GaN
journal, December 2011

  • Ščajev, Patrik; Jarašiūnas, Kęstutis; Okur, Serdal
  • physica status solidi (b), Vol. 249, Issue 3
  • DOI: 10.1002/pssb.201100307

High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy
journal, January 2016

  • Hartmann, Jana; Steib, Frederik; Zhou, Hao
  • Crystal Growth & Design, Vol. 16, Issue 3
  • DOI: 10.1021/acs.cgd.5b01598

Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy
journal, February 2015

  • Iwata, Yoshiya; Banal, Ryan G.; Ichikawa, Shuhei
  • Journal of Applied Physics, Vol. 117, Issue 7
  • DOI: 10.1063/1.4908282

Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics
journal, October 2004

  • Qian, Fang; Li, Yat; Gradečak, Silvija
  • Nano Letters, Vol. 4, Issue 10
  • DOI: 10.1021/nl0487774

Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition
journal, October 2012

Efficiency of light emission in high aluminum content AlGaN quantum wells
journal, April 2009

  • Shatalov, Max; Yang, Jinwei; Sun, Wenhong
  • Journal of Applied Physics, Vol. 105, Issue 7
  • DOI: 10.1063/1.3103321

Controlled Growth of Ordered III-Nitride Core–Shell Nanostructure Arrays for Visible Optoelectronic Devices
journal, October 2014

  • Rishinaramangalam, Ashwin K.; Ul Masabih, Saadat Mishkat; Fairchild, Michael N.
  • Journal of Electronic Materials, Vol. 44, Issue 5
  • DOI: 10.1007/s11664-014-3456-z

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
journal, April 1997

  • Takeuchi, Tetsuya; Sota, Shigetoshi; Katsuragawa, Maki
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 2, No. 4A
  • DOI: 10.1143/JJAP.36.L382

Gallium Nitride Nanowire Nanodevices
journal, February 2002

  • Huang, Yu; Duan, Xiangfeng; Cui, Yi
  • Nano Letters, Vol. 2, Issue 2
  • DOI: 10.1021/nl015667d

SiO 2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes
journal, July 2016

  • Lim, Wantae; Kum, Hyun; Choi, Young-Jin
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 4
  • DOI: 10.1116/1.4959027

Directional radiation beam from yellow-emitting InGaN-based nanocolumn LEDs with ordered bottom-up nanocolumn array
journal, November 2014

  • Yanagihara, Ai; Ishizawa, Shunsuke; Kishino, Katsumi
  • Applied Physics Express, Vol. 7, Issue 11
  • DOI: 10.7567/apex.7.112102

Recombination of free and bound excitons in GaN
journal, September 2008

  • Monemar, B.; Paskov, P. P.; Bergman, J. P.
  • physica status solidi (b), Vol. 245, Issue 9
  • DOI: 10.1002/pssb.200844059

Three-dimensional GaN for semipolar light emitters
journal, October 2010

  • Wunderer, T.; Feneberg, M.; Lipski, F.
  • physica status solidi (b), Vol. 248, Issue 3
  • DOI: 10.1002/pssb.201046352

Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array
journal, August 2013

  • Riley, James R.; Padalkar, Sonal; Li, Qiming
  • Nano Letters, Vol. 13, Issue 9
  • DOI: 10.1021/nl4021045

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes
journal, December 2003

  • Watanabe, Satoshi; Yamada, Norihide; Nagashima, Masakazu
  • Applied Physics Letters, Vol. 83, Issue 24
  • DOI: 10.1063/1.1633672

Threading defect elimination in GaN nanowires
journal, June 2011

  • Hersee, Stephen D.; Rishinaramangalam, Ashwin K.; Fairchild, Michael N.
  • Journal of Materials Research, Vol. 26, Issue 17
  • DOI: 10.1557/jmr.2011.112

Green-Light Nanocolumn Light Emitting Diodes With Triangular-Lattice Uniform Arrays of InGaN-Based Nanocolumns
journal, July 2014

100-Mb/s NRZ Visible Light Communications Using a Postequalized White LED
journal, August 2009

  • Hoa Le Minh, ; O'Brien, D.; Faulkner, G.
  • IEEE Photonics Technology Letters, Vol. 21, Issue 15
  • DOI: 10.1109/LPT.2009.2022413

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
journal, February 2012

  • Nguyen, Hieu Pham Trung; Cui, Kai; Zhang, Shaofei
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl203860b

Multi-Colour Nanowire Photonic Crystal Laser Pixels
journal, October 2013

  • Wright, Jeremy B.; Liu, Sheng; Wang, George T.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02982

Investigation of Purcell Factor and Light Extraction Efficiency in Ag-Coated GaN/InGaN Core-Shell Nanowires
conference, January 2014

Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires
journal, January 2000

  • Duan, Xiangfeng; Lieber, Charles M.
  • Journal of the American Chemical Society, Vol. 122, Issue 1
  • DOI: 10.1021/ja993713u

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs
conference, March 2016

  • Schimpke, Tilman; Lugauer, H. -J.; Avramescu, A.
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2214122

Functionalized GaN nanowire-based electrode for direct label-free voltammetric detection of DNA hybridization
journal, January 2009

  • Ganguly, Abhijit; Chen, Chin-Pei; Lai, Yao-Tong
  • Journal of Materials Chemistry, Vol. 19, Issue 7
  • DOI: 10.1039/b816556d

Visible-Color-Tunable Light-Emitting Diodes
journal, June 2011

  • Hong, Young Joon; Lee, Chul-Ho; Yoon, Aram
  • Advanced Materials, Vol. 23, Issue 29
  • DOI: 10.1002/adma.201100806

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array
journal, January 2014

  • Tu, Charng-Gan; Liao, Che-Hao; Yao, Yu-Feng
  • Optics Express, Vol. 22, Issue S7
  • DOI: 10.1364/oe.22.0a1799

Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
journal, February 2011

  • Rangel, Elizabeth; Matioli, Elison; Choi, Yong-Seok
  • Applied Physics Letters, Vol. 98, Issue 8
  • DOI: 10.1063/1.3554417

Multi-section core-shell InGaN/GaN quantum-well nanorod light-emitting diode array
journal, January 2015

  • Tu, Charng-Gan; Yao, Yu-Feng; Liao, Che-Hao
  • Optics Express, Vol. 23, Issue 17
  • DOI: 10.1364/oe.23.021919

Photonic crystal LEDs - designing light extraction
journal, April 2009

  • Wiesmann, C.; Bergenek, K.; Linder, N.
  • Laser & Photonics Review, Vol. 3, Issue 3
  • DOI: 10.1002/lpor.200810053

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
journal, August 2010

  • Rangel, Elizabeth; Matioli, Elison; Chen, Hung-Tse
  • Applied Physics Letters, Vol. 97, Issue 6
  • DOI: 10.1063/1.3480421

Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
journal, November 2010

  • Li, Qiming; Wang, George T.
  • Applied Physics Letters, Vol. 97, Issue 18
  • DOI: 10.1063/1.3513345

Modeling the radiation pattern of LEDs
journal, January 2008

Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns
journal, October 2006

  • Kawakami, Y.; Suzuki, S.; Kaneta, A.
  • Applied Physics Letters, Vol. 89, Issue 16
  • DOI: 10.1063/1.2363958

Multi-Colour Nanowire Photonic Crystal Laser Pixels
journal, October 2013

  • Wright, Jeremy B.; Liu, Sheng; Wang, George T.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02982
    Sort by:
    [ × clear filter / sort ]

    Works referencing / citing this record:

    III‐Nitride Micro‐LEDs for Efficient Emissive Displays
    journal, August 2019

    Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction
    journal, January 2020

    • Murakami, Hideki; Suzuki, Atsushi; Nokimura, Kyohei
    • physica status solidi (a), Vol. 217, Issue 7
    • DOI: 10.1002/pssa.201900774

    Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires
    journal, November 2019

    Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
    journal, May 2018

    Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
    journal, May 2018

    Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods
    journal, October 2018

    Electronic and optical properties of GaN/AlN core–shell nanowires
    journal, December 2019

    Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods
    journal, October 2018

    Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates
    journal, January 2019

    • Blumberg, C.; Wefers, F.; Tegude, F. -J.
    • CrystEngComm, Vol. 21, Issue 48
    • DOI: 10.1039/c9ce01151j

    Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
    journal, January 2019

    • Lu, Weifang; Sone, Naoki; Goto, Nanami
    • Nanoscale, Vol. 11, Issue 40
    • DOI: 10.1039/c9nr07271c

    Femtosecond Pump Probe Reflectivity Spectra in CdTe and GaAs Crystals at Room Temperature
    journal, January 2020

    A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges
    journal, December 2018

    Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires
    journal, January 2019

    • Johar, Muhammad Ali; Song, Hyun-Gyu; Waseem, Aadil
    • Nanoscale, Vol. 11, Issue 22
    • DOI: 10.1039/c9nr02823d

    Femtosecond Pump Probe Reflectivity Spectra in CdTe and GaAs Crystals at Room Temperature
    journal, January 2020

      Sort by:
      [ × clear filter / sort ]

      Similar Records in DOE PAGES and OSTI.GOV collections: