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Title: Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

Abstract

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0–10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Authors:
ORCiD logo [1];  [2];  [2];  [2]; ORCiD logo [1]
  1. Univ. of California, Berkeley, CA (United States)
  2. Stanford Univ., CA (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1470449
Alternate Identifier(s):
OSTI ID: 1436010
Grant/Contract Number:  
SC0001293
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 123; Journal Issue: 17; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; solar (photovoltaic); solid state lighting; phonons, thermal conductivity; electrodes - solar; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly)

Citation Formats

Xiao, T. Patrick, Chen, Kaifeng, Santhanam, Parthiban, Fan, Shanhui, and Yablonovitch, Eli. Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes. United States: N. p., 2018. Web. doi:10.1063/1.5019764.
Xiao, T. Patrick, Chen, Kaifeng, Santhanam, Parthiban, Fan, Shanhui, & Yablonovitch, Eli. Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes. United States. https://doi.org/10.1063/1.5019764
Xiao, T. Patrick, Chen, Kaifeng, Santhanam, Parthiban, Fan, Shanhui, and Yablonovitch, Eli. Fri . "Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes". United States. https://doi.org/10.1063/1.5019764. https://www.osti.gov/servlets/purl/1470449.
@article{osti_1470449,
title = {Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes},
author = {Xiao, T. Patrick and Chen, Kaifeng and Santhanam, Parthiban and Fan, Shanhui and Yablonovitch, Eli},
abstractNote = {Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0–10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.},
doi = {10.1063/1.5019764},
journal = {Journal of Applied Physics},
number = 17,
volume = 123,
place = {United States},
year = {Fri May 04 00:00:00 EDT 2018},
month = {Fri May 04 00:00:00 EDT 2018}
}

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Cited by: 32 works
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Works referenced in this record:

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
journal, August 2016

  • David, Aurelien; Hurni, Christophe A.; Young, Nathan G.
  • Applied Physics Letters, Vol. 109, Issue 8
  • DOI: 10.1063/1.4961491

Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit
journal, July 2012

  • Miller, Owen D.; Yablonovitch, Eli; Kurtz, Sarah R.
  • IEEE Journal of Photovoltaics, Vol. 2, Issue 3, p. 303-311
  • DOI: 10.1109/JPHOTOV.2012.2198434

Optical absorption edge of semi-insulating GaAs and InP at high temperatures
journal, June 1997

  • Beaudoin, M.; DeVries, A. J. G.; Johnson, S. R.
  • Applied Physics Letters, Vol. 70, Issue 26
  • DOI: 10.1063/1.119226

Empirical low-field mobility model for III–V compounds applicable in device simulation codes
journal, March 2000

  • Sotoodeh, M.; Khalid, A. H.; Rezazadeh, A. A.
  • Journal of Applied Physics, Vol. 87, Issue 6
  • DOI: 10.1063/1.372274

30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
journal, October 1993

  • Schnitzer, I.; Yablonovitch, E.; Caneau, C.
  • Applied Physics Letters, Vol. 63, Issue 16
  • DOI: 10.1063/1.110575

Photon-Radiative Recombination of Electrons and Holes in Germanium
journal, June 1954


Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007

  • Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
  • Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
  • DOI: 10.1109/JDT.2007.895339

Omnidirectional reflection from a one-dimensional photonic crystal
journal, January 1998

  • Winn, Joshua N.; Fink, Yoel; Fan, Shanhui
  • Optics Letters, Vol. 23, Issue 20, p. 1573-1575
  • DOI: 10.1364/OL.23.001573

Auger recombination in intrinsic GaAs
journal, January 1993

  • Strauss, U.; Rühle, W. W.; Köhler, K.
  • Applied Physics Letters, Vol. 62, Issue 1
  • DOI: 10.1063/1.108817

High-performance near-field electroluminescent refrigeration device consisting of a GaAs light emitting diode and a Si photovoltaic cell
journal, October 2017

  • Chen, Kaifeng; Xiao, Tianyao P.; Santhanam, Parthiban
  • Journal of Applied Physics, Vol. 122, Issue 14
  • DOI: 10.1063/1.5007712

Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
journal, January 2015

  • Hurni, Christophe A.; David, Aurelien; Cich, Michael J.
  • Applied Physics Letters, Vol. 106, Issue 3
  • DOI: 10.1063/1.4905873

Radiant refrigeration by semiconductor diodes
journal, August 1985

  • Berdahl, Paul
  • Journal of Applied Physics, Vol. 58, Issue 3
  • DOI: 10.1063/1.336309

Surface-Roughened Light-Emitting Diodes: An Accurate Model
journal, May 2013


Solar cell efficiency tables (version 50)
journal, June 2017

  • Green, Martin A.; Hishikawa, Yoshihiro; Warta, Wilhelm
  • Progress in Photovoltaics: Research and Applications, Vol. 25, Issue 7
  • DOI: 10.1002/pip.2909

Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
journal, January 1993

  • Schnitzer, I.; Yablonovitch, E.; Caneau, C.
  • Applied Physics Letters, Vol. 62, Issue 2
  • DOI: 10.1063/1.109348

Progress Towards a 30% Efficient GaInP/Si Tandem Solar Cell
journal, August 2015


A survey of ohmic contacts to III-V compound semiconductors
journal, October 1997


Far-infrared properties of metallic mesh and its complementary structure
journal, March 1967


A review of thermoelectric cooling: Materials, modeling and applications
journal, May 2014


Heat-flux control and solid-state cooling by regulating chemical potential of photons in near-field electromagnetic heat transfer
journal, April 2015


Improved model for calculating the coefficient of performance of a Peltier module
journal, January 2000


Thermodynamic Limitation on the Conversion of Heat into Light
journal, January 1960


Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994

  • Zhao, H.; Steier, W. H.; Dapkus, P. D.
  • Electronics Letters, Vol. 30, Issue 14
  • DOI: 10.1049/el:19940754

Laser cooling of a semiconductor by 40 kelvin
journal, January 2013


Effects of epitaxial lift-off on interface recombination and laser cooling in GaInP∕GaAs heterostructures
journal, February 2005

  • Imangholi, Babak; Hasselbeck, Michael P.; Sheik-Bahae, Mansoor
  • Applied Physics Letters, Vol. 86, Issue 8
  • DOI: 10.1063/1.1868068

Light Emission Produced by Current Injected into a Green Silicon-Carbide Crystal
journal, January 1953

  • Lehovec, K.; Accardo, C. A.; Jamgochian, E.
  • Physical Review, Vol. 89, Issue 1
  • DOI: 10.1103/PhysRev.89.20

Optically Enhanced Photon Recycling in Mechanically Stacked Multijunction Solar Cells
journal, January 2016


The chemical potential of radiation
journal, June 1982


Development of high quantum efficiency GaAs/GaInP double heterostructures for laser cooling
journal, June 2013

  • Bender, Daniel A.; Cederberg, Jeffrey G.; Wang, Chengao
  • Applied Physics Letters, Vol. 102, Issue 25
  • DOI: 10.1063/1.4811759

Electroluminescent cooling mechanism in InGaN/GaN light-emitting diodes
journal, September 2016


Heat Transfer in Thermoelectric Materials and Devices
journal, May 2013

  • Tian, Zhiting; Lee, Sangyeop; Chen, Gang
  • Journal of Heat Transfer, Vol. 135, Issue 6
  • DOI: 10.1115/1.4023585

Optical refrigeration
journal, December 2007


Planar laterally oxidized vertical-cavity lasers for low-threshold high-density top-surface-emitting arrays
journal, August 1997

  • Chua, C. L.; Thornton, R. L.; Treat, D. W.
  • IEEE Photonics Technology Letters, Vol. 9, Issue 8
  • DOI: 10.1109/68.605499

Bias-dependent Peltier coefficient and internal cooling in bipolar devices
journal, September 2002


Laser cooling of organic–inorganic lead halide perovskites
journal, December 2015


High-performance electroluminescent refrigeration enabled by photon tunneling
journal, August 2016


Thermophotonic heat pump—a theoretical model and numerical simulations
journal, May 2010

  • Oksanen, Jani; Tulkki, Jukka
  • Journal of Applied Physics, Vol. 107, Issue 9
  • DOI: 10.1063/1.3419716

Photon recycling effect on electroluminescent refrigeration
journal, January 2012

  • Lee, Kuan-Chen; Yen, Shun-Tung
  • Journal of Applied Physics, Vol. 111, Issue 1
  • DOI: 10.1063/1.3676249

High wall-plug efficiency blue III-nitride LEDs designed for low current density operation
journal, January 2017

  • Kuritzky, Leah Y.; Espenlaub, Andrew C.; Yonkee, Benjamin P.
  • Optics Express, Vol. 25, Issue 24
  • DOI: 10.1364/OE.25.030696

Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
journal, August 1962


Maximum statistical increase of optical absorption in textured semiconductor films
journal, January 1983

  • Deckman, H. W.; Roxlo, C. B.; Yablonovitch, E.
  • Optics Letters, Vol. 8, Issue 9
  • DOI: 10.1364/OL.8.000491

Efficiency droop in light-emitting diodes: Challenges and countermeasures: Efficiency droop in light-emitting diodes: Challenges and countermeasures
journal, January 2013

  • Cho, Jaehee; Schubert, E. Fred; Kim, Jong Kyu
  • Laser & Photonics Reviews, Vol. 7, Issue 3
  • DOI: 10.1002/lpor.201200025

Radiative efficiency of state-of-the-art photovoltaic cells
journal, September 2011

  • Green, Martin A.
  • Progress in Photovoltaics: Research and Applications, Vol. 20, Issue 4, p. 472-476
  • DOI: 10.1002/pip.1147

Extreme selectivity in the lift‐off of epitaxial GaAs films
journal, December 1987

  • Yablonovitch, Eli; Gmitter, T.; Harbison, J. P.
  • Applied Physics Letters, Vol. 51, Issue 26, p. 2222-2224
  • DOI: 10.1063/1.98946

Thermophotonics
journal, April 2003


Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells
journal, March 1961

  • Shockley, William; Queisser, Hans J.
  • Journal of Applied Physics, Vol. 32, Issue 3, p. 510-519
  • DOI: 10.1063/1.1736034

Point-contact silicon solar cells
journal, May 1984

  • Swanson, R. M.; Beckwith, S. K.; Crane, R. A.
  • IEEE Transactions on Electron Devices, Vol. 31, Issue 5
  • DOI: 10.1109/T-ED.1984.21586

Thermally enhanced blue light-emitting diode
journal, September 2015

  • Xue, Jin; Zhao, Yuji; Oh, Sang-Ho
  • Applied Physics Letters, Vol. 107, Issue 12
  • DOI: 10.1063/1.4931365

Statistical ray optics
journal, July 1982

  • Yablonovitch, Eli
  • Journal of the Optical Society of America, Vol. 72, Issue 7, p. 899-907
  • DOI: 10.1364/JOSA.72.000899

Thermoelectrically Pumped Light-Emitting Diodes Operating above Unity Efficiency
journal, February 2012


External radiative quantum efficiency of 96% from a GaAs / GaInP heterostructure
journal, January 1997

  • Gauck, H.; Gfroerer, T. H.; Renn, M. J.
  • Applied Physics A: Materials Science & Processing, Vol. 64, Issue 2
  • DOI: 10.1007/s003390050455

Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitters
journal, September 2016

  • Olsson, Anders; Tiira, Jonna; Partanen, Mikko
  • IEEE Transactions on Electron Devices, Vol. 63, Issue 9
  • DOI: 10.1109/TED.2016.2590461

Effect of Auger recombination on laser operation in Ga 1− x Al x As
journal, November 1985

  • Takeshima, Masumi
  • Journal of Applied Physics, Vol. 58, Issue 10
  • DOI: 10.1063/1.335600

Diffusion-Driven Charge Transport in Light Emitting Devices
journal, December 2017

  • Kim, Iurii; Kivisaari, Pyry; Oksanen, Jani
  • Materials, Vol. 10, Issue 12
  • DOI: 10.3390/ma10121421

Ultimate limit and temperature dependency of light-emitting diode efficiency
journal, May 2009

  • Heikkilä, Oskari; Oksanen, Jani; Tulkki, Jukka
  • Journal of Applied Physics, Vol. 105, Issue 9
  • DOI: 10.1063/1.3125514

Planar GaN-Based Blue Light-Emitting Diodes With Surface p-n Junction Formed by Selective-Area Si–Ion Implantation
journal, October 2017

  • Lee, Ming-Lun; Yeh, Yu-Hsiang; Liu, Zi-Yuan
  • IEEE Transactions on Electron Devices, Vol. 64, Issue 10
  • DOI: 10.1109/TED.2017.2738058

Thermoelectric refrigeration
journal, May 1960


Thermoelectric Refrigeration
journal, August 1965


Works referencing / citing this record:

Diffusion-driven GaInP/GaAs light-emitting diodes enhanced by modulation doping
journal, March 2019

  • Myllynen, Antti; Sadi, Toufik; Oksanen, Jani
  • Optical and Quantum Electronics, Vol. 51, Issue 3
  • DOI: 10.1007/s11082-019-1806-z

Ultra-low-power sub-photon-voltage high-efficiency light-emitting diodes
journal, June 2019


Near-field photonic cooling through control of the chemical potential of photons
journal, February 2019


On the temperature dependence of the efficiency of electroluminescence
journal, November 2019

  • Casado, Alberto; Radevici, Ivan; Sadi, Toufik
  • Journal of Applied Physics, Vol. 126, Issue 17
  • DOI: 10.1063/1.5124566

Self-sustaining thermophotonic circuits
journal, May 2019

  • Zhao, Bo; Buddhiraju, Siddharth; Santhanam, Parthiban
  • Proceedings of the National Academy of Sciences
  • DOI: 10.1073/pnas.1904938116

Effect of Evanescent Waves on the Dark Current of Thermophotovoltaic Cells
journal, October 2019


Parametric optimum design of a near-field electroluminescent refrigerator
journal, June 2019

  • Liao, Tianjun; Tao, Chuanyi; Chen, Xiaohang
  • Journal of Physics D: Applied Physics, Vol. 52, Issue 32
  • DOI: 10.1088/1361-6463/ab2341

Redefining near-unity luminescence in quantum dots with photothermal threshold quantum yield
journal, March 2019

  • Hanifi, David A.; Bronstein, Noah D.; Koscher, Brent A.
  • Science, Vol. 363, Issue 6432
  • DOI: 10.1126/science.aat3803