Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition
Abstract
Here, the incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and (11¯01) facets at both edges. A stack of five, ~3 nm-thick, InxGa1–xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (~0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. Lastly, the In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar (11¯01) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-InxGa1–xN/GaN QWs on Si(001) in photoluminescence.
- Authors:
-
- Univ. of New Mexico, Albuquerque, NM (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Publication Date:
- Research Org.:
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1468467
- Alternate Identifier(s):
- OSTI ID: 1228438
- Grant/Contract Number:
- EE0000627
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 23; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., and Brueck, S. R. J. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. United States: N. p., 2015.
Web. doi:10.1063/1.4936772.
Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., & Brueck, S. R. J. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition. United States. https://doi.org/10.1063/1.4936772
Lee, S. C., Youngblood, N., Jiang, Y. B., Peterson, E. J., Stark, C. J. M., Detchprohm, T., Wetzel, C., and Brueck, S. R. J. Mon .
"Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition". United States. https://doi.org/10.1063/1.4936772. https://www.osti.gov/servlets/purl/1468467.
@article{osti_1468467,
title = {Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition},
author = {Lee, S. C. and Youngblood, N. and Jiang, Y. B. and Peterson, E. J. and Stark, C. J. M. and Detchprohm, T. and Wetzel, C. and Brueck, S. R. J.},
abstractNote = {Here, the incorporation of In on the non-polar, piezoelectric-free (001) facet of cubic (c-) GaN epitaxially grown over a Si(001) substrate by metal-organic vapor phase epitaxy is reported. Relying on a hexagonal (h-) to c-phase transformation during epitaxy on an 800 nm-wide, Si(111)-faceted v-groove patterned into the substrate, the GaN epilayer at cross sectional view retains a triangular c-phase inside a chevron-shaped h-phase that results in a top surface bounded by a (001) facet parallel to Si(001) at the center and (11¯01) facets at both edges. A stack of five, ~3 nm-thick, InxGa1–xN/GaN quantum wells (QWs) was deposited on the double-phased top surface. The c-phase region up to the QWs keeps extremely small misfit (~0.002) to the fully relaxed h-GaN underneath it and is in tensile stress implying undefected by the h-c phase interface. Lastly, the In incorporation on a strained non-polar (001) of c-GaN is comparable with that on totally relaxed semi-polar (11¯01) of h-GaN without noticeable adatom migration across the phase boundary, and sufficient to provide the room-temperature green emission at 496 nm from the c-InxGa1–xN/GaN QWs on Si(001) in photoluminescence.},
doi = {10.1063/1.4936772},
journal = {Applied Physics Letters},
number = 23,
volume = 107,
place = {United States},
year = {Mon Dec 07 00:00:00 EST 2015},
month = {Mon Dec 07 00:00:00 EST 2015}
}
Web of Science
Works referenced in this record:
Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)
journal, December 2013
- Stark, Christoph J. M.; Detchprohm, Theeradetch; Lee, S. C.
- Applied Physics Letters, Vol. 103, Issue 23
Auger recombination in InGaN measured by photoluminescence
journal, October 2007
- Shen, Y. C.; Mueller, G. O.; Watanabe, S.
- Applied Physics Letters, Vol. 91, Issue 14
Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD
journal, January 2014
- Chen, Yung-Sheng; Liao, Che-Hao; Kuo, Chie-Tong
- Nanoscale Research Letters, Vol. 9, Issue 1
Electronic structure of zinc-blende-wurtzite interfaces: ZnS-ZnS (111-0001) and ZnSe-ZnSe (111-0001)
journal, August 1980
- Northrup, John E.; Ihm, J.; Cohen, Marvin L.
- Physical Review B, Vol. 22, Issue 4
Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface
journal, March 2004
- Lee, S. C.; Sun, X. Y.; Hersee, S. D.
- Applied Physics Letters, Vol. 84, Issue 12
Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
journal, March 2011
- Chiu, Ching-Hsueh; Lin, Da-Wei; Lin, Chien-Chung
- Journal of Crystal Growth, Vol. 318, Issue 1
Nanoscale spatial phase modulation of GaN on a V-grooved Si Substrate-cubic phase GaN on Si(001) for monolithic integration
journal, April 2005
- Lee, S. C.; Pattada, B.; Hersee, S. D.
- IEEE Journal of Quantum Electronics, Vol. 41, Issue 4
Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
journal, May 2013
- Baloch, Kamal H.; Johnston-Peck, Aaron C.; Kisslinger, Kim
- Applied Physics Letters, Vol. 102, Issue 19
Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates
journal, September 2013
- Izyumskaya, N.; Zhang, F.; Okur, S.
- Journal of Applied Physics, Vol. 114, Issue 11
Fabrication of InGaN/GaN Multiple Quantum Wells on (11̄01) GaN
journal, August 2013
- Tanikawa, Tomoyuki; Sano, Tomotaka; Kushimoto, Maki
- Japanese Journal of Applied Physics, Vol. 52, Issue 8S
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007
- Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
- Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)
journal, April 2003
- Zheng, X. H.; Wang, Y. T.; Feng, Z. H.
- Journal of Crystal Growth, Vol. 250, Issue 3-4
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
journal, May 2012
- Zhao, Yuji; Yan, Qimin; Huang, Chia-Yen
- Applied Physics Letters, Vol. 100, Issue 20
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
journal, August 1991
- Lei, T.; Fanciulli, M.; Molnar, R. J.
- Applied Physics Letters, Vol. 59, Issue 8
Origin of efficiency droop in GaN-based light-emitting diodes
journal, October 2007
- Kim, Min-Ho; Schubert, Martin F.; Dai, Qi
- Applied Physics Letters, Vol. 91, Issue 18
Relaxation Process of the Thermal Strain in the GaN/α-Al 2 O 3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
journal, October 1992
- Detchprohm, Theeradetch; Hiramatsu, Kazumasa; Itoh, Kenji
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 10B
Indium clustering in a -plane InGaN quantum wells as evidenced by atom probe tomography
journal, February 2015
- Tang, Fengzai; Zhu, Tongtong; Oehler, Fabrice
- Applied Physics Letters, Vol. 106, Issue 7
Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays
journal, January 2010
- Henson, John; Dimakis, Emmanouil; DiMaria, Jeff
- Optics Express, Vol. 18, Issue 20
Works referencing / citing this record:
Initial stage of cubic GaN for heterophase epitaxial growth induced on nanoscale v-grooved Si(001) in metal-organic vapor-phase epitaxy
journal, November 2018
- Lee, S. C.; Jiang, Y-B; Durniak, M.
- Nanotechnology, Vol. 30, Issue 2