Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

Mclain, Michael L.; Barnaby, Hugh; Schlenvogt, Garrett

doi:10.1109/TNS.2017.2705118

Title: Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

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Abstract

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are then used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.

Authors:

^[1];

^[2]; Schlenvogt, Garrett ^[3]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Arizona State Univ., Tempe, AZ (United States)
Silvaco, Inc., Chelmsford, MA (United States)

Publication Date:: Wed May 17 00:00:00 EDT 2017

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1467000

Report Number(s):: SAND2018-0525J
Journal ID: ISSN 0018-9499; 660030

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 64; Journal Issue: 8; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 97 MATHEMATICS AND COMPUTING; bulk CMOS; process variation; radiation-induced defects; radiation-induced edge leakage currents; total ionizing dose (TID); implants; semiconductor process modeling; computational modeling; mathematical model; doping profiles

Citation Formats


                    Mclain, Michael L., Barnaby, Hugh, and Schlenvogt, Garrett. Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.  United States: N. p., 2017. 
Web.  doi:10.1109/TNS.2017.2705118.

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                    Mclain, Michael L., Barnaby, Hugh, & Schlenvogt, Garrett. Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs.  United States.  https://doi.org/10.1109/TNS.2017.2705118

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                    Mclain, Michael L., Barnaby, Hugh, and Schlenvogt, Garrett. Wed .  
"Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs".  United States.  https://doi.org/10.1109/TNS.2017.2705118.  https://www.osti.gov/servlets/purl/1467000.

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@article{osti_1467000,

  title        = {Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs},

  author       = {Mclain, Michael L. and Barnaby, Hugh and Schlenvogt, Garrett},

  abstractNote = {The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are then used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.},

  doi          = {10.1109/TNS.2017.2705118},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 8,

  volume       = 64,

  place        = {United States},

  year         = {Wed May 17 00:00:00 EDT 2017},

  month        = {Wed May 17 00:00:00 EDT 2017}

}

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