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Title: Nontrivial Nature and Penetration Depth of Topological Surface States in SmB 6 Thin Films

Abstract

The nontrivial feature and penetration depth of the topological surface states (TSS) in SmB6 were studied via spin pumping. The experiments used SmB6 thin films grown on the bulk magnetic insulator Y3Fe5O12 (YIG). Upon the excitation of magnetization precession in the YIG, a spin current is generated in the SmB6 that produces, via spin--orbit coupling, a lateral electrical voltage in the film. This spin-pumping voltage signal becomes considerably stronger as the temperature decreases from 150 to 10 K, and such an enhancement most likely originates from the spin-momentum locking of the TSS and may thereby serve as evidence for the nontrivial nature of the TSS. The voltage data also show a unique film thickness dependence that suggests a TSS depth of ~32 nm. Finally, the spin--pumping results arc supported by transport measurements and analyses using a tight binding model.

Authors:
 [1];  [2];  [3];  [4];  [1];  [1];  [5];  [4];  [4];  [3];  [2];  [1]
  1. Colorado State Univ., Fort Collins, CO (United States)
  2. Johns Hopkins Univ., Baltimore, MD (United States)
  3. Univ. of California, Irvine, CA (United States)
  4. Argonne National Lab. (ANL), Lemont, IL (United States)
  5. Colorado State Univ., Fort Collins, CO (United States); St. Petersburg Electrotechnical Univ., St. Petersburg (Russia)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Spins and Heat in Nanoscale Electronic Systems (SHINES); Argonne National Laboratory (ANL), Argonne, IL (United States); Johns Hopkins Univ., Baltimore, MD (United States); Univ. of California, Riverside, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1466390
Alternate Identifier(s):
OSTI ID: 1437688; OSTI ID: 1597379
Grant/Contract Number:  
AC02-06CH11357; SC0009390; SC0012670
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 120; Journal Issue: 20; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Liu, Tao, Li, Yufan, Gu, Lei, Ding, Junjia, Chang, Houchen, Janantha, P. A. Praveen, Kalinikos, Boris, Novosad, Valentyn, Hoffmann, Axel, Wu, Ruqian, Chien, C. L., and Wu, Mingzhong. Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.120.207206.
Liu, Tao, Li, Yufan, Gu, Lei, Ding, Junjia, Chang, Houchen, Janantha, P. A. Praveen, Kalinikos, Boris, Novosad, Valentyn, Hoffmann, Axel, Wu, Ruqian, Chien, C. L., & Wu, Mingzhong. Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films. United States. https://doi.org/10.1103/PhysRevLett.120.207206
Liu, Tao, Li, Yufan, Gu, Lei, Ding, Junjia, Chang, Houchen, Janantha, P. A. Praveen, Kalinikos, Boris, Novosad, Valentyn, Hoffmann, Axel, Wu, Ruqian, Chien, C. L., and Wu, Mingzhong. Fri . "Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films". United States. https://doi.org/10.1103/PhysRevLett.120.207206. https://www.osti.gov/servlets/purl/1466390.
@article{osti_1466390,
title = {Nontrivial Nature and Penetration Depth of Topological Surface States in SmB6 Thin Films},
author = {Liu, Tao and Li, Yufan and Gu, Lei and Ding, Junjia and Chang, Houchen and Janantha, P. A. Praveen and Kalinikos, Boris and Novosad, Valentyn and Hoffmann, Axel and Wu, Ruqian and Chien, C. L. and Wu, Mingzhong},
abstractNote = {The nontrivial feature and penetration depth of the topological surface states (TSS) in SmB6 were studied via spin pumping. The experiments used SmB6 thin films grown on the bulk magnetic insulator Y3Fe5O12 (YIG). Upon the excitation of magnetization precession in the YIG, a spin current is generated in the SmB6 that produces, via spin--orbit coupling, a lateral electrical voltage in the film. This spin-pumping voltage signal becomes considerably stronger as the temperature decreases from 150 to 10 K, and such an enhancement most likely originates from the spin-momentum locking of the TSS and may thereby serve as evidence for the nontrivial nature of the TSS. The voltage data also show a unique film thickness dependence that suggests a TSS depth of ~32 nm. Finally, the spin--pumping results arc supported by transport measurements and analyses using a tight binding model.},
doi = {10.1103/PhysRevLett.120.207206},
journal = {Physical Review Letters},
number = 20,
volume = 120,
place = {United States},
year = {Fri May 18 00:00:00 EDT 2018},
month = {Fri May 18 00:00:00 EDT 2018}
}

Journal Article:

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Cited by: 7 works
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Figures / Tables:

Fig. 1 Fig. 1: Spin-pumping experiments. (a-b) Experiment approach. (c-d) Spin-pumping signals measured using opposite fields (H) and an input microwave power Pin=100 mW. The curves show calculated spin-wave frequencies. (e) Signals measured at different Pin, where VH>0 (VH<0) is the signal measured at H=400 Oe (H=-400 Oe). The vertical dashed linesmore » indicate the calculated frequencies of three modes. (f) Amplitude of the (1,0) peak in (e) vs. Pin.« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.