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Title: Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control

Abstract

The desire for low-power/voltage operation of devices is driving renewed interest in understanding scaling effects in ferroelectric thin films. As the dimensions of ferroelectrics are reduced, the properties can vary dramatically, including the robust scaling relationship between coercive field (Ec) and thickness (d), also referred to as the Janovec-Kay-Dunn (JKD) law, wherein Ec ∝ d-2/3. Here, we report that whereas (001)-oriented heterostructures follow JKD scaling across the thicknesses range of 20-330 nm, (111)-oriented heterostructures of the canonical tetragonal ferroelectric PbZr0.2Ti0.8O3 exhibit a deviation from JKD scaling wherein a smaller scaling exponent for the evolution of Ec is observed in films of thickness ≤ 165 nm. X-ray diffraction reveals that whereas (001)-oriented heterostructures remain tetragonal for all thicknesses, (111)-oriented heterostructures exhibit a transition from tetragonal-to-monoclinic symmetry in films of thickness ≤ 165 nm as a result of the compressive strain. First-principles calculations suggest that this symmetry change contributes to the deviation from the expected scaling, as the monoclinic phase has a lower energy barrier for switching. This structural evolution also gives rise to changes in the c/a lattice parameter ratio, wherein this ratio increases and decreases in (001)- and (111)-oriented heterostructures, respectively, as the films are made thinner. In (111)-oriented heterostructures,more » this reduced tetragonality drives a reduction of the remanent polarization and, therefore, a reduction of the domain-wall energy and overall energy barrier to switching, which further exacerbates the deviation from the expected scaling. Altogether, this work demonstrates a route toward reducing coercive fields in ferroelectric thin films and provides a possible mechanism to understand the deviation from JKD scaling.« less

Authors:
ORCiD logo [1];  [1];  [2];  [1];  [3];  [1]; ORCiD logo [1];  [4];  [5];  [6];  [1];  [7];  [8]; ORCiD logo [6]
  1. Univ. of California, Berkeley, CA (United States)
  2. Univ. Andres Bello, Santiago (Chile); Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Univ. of Science and Technology of China, Hefei (China)
  4. Harbin Institute of Technology, Harbin (China)
  5. Hubei Univ., Wuhan (China)
  6. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  7. Argonne National Lab. (ANL), Argonne, IL (United States)
  8. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Kavli Energy NanoScience Institute at Berkeley, CA (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1466327
Alternate Identifier(s):
OSTI ID: 1462002
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 12; Journal Issue: 5; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; coercive-field scaling; ferroelectric; size effects; thin film; x-ray diffraction

Citation Formats

Xu, Ruijuan, Gao, Ran, Reyes-Lillo, Sebastian E., Saremi, Sahar, Dong, Yongqi, Lu, Hongling, Chen, Zuhuang, Lu, Xiaoyan, Qi, Yajun, Hsu, Shang-Lin, Damodaran, Anoop R., Zhou, Hua, Neaton, Jeffrey B., and Martin, Lane W. Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control. United States: N. p., 2018. Web. doi:10.1021/acsnano.8b01399.
Xu, Ruijuan, Gao, Ran, Reyes-Lillo, Sebastian E., Saremi, Sahar, Dong, Yongqi, Lu, Hongling, Chen, Zuhuang, Lu, Xiaoyan, Qi, Yajun, Hsu, Shang-Lin, Damodaran, Anoop R., Zhou, Hua, Neaton, Jeffrey B., & Martin, Lane W. Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control. United States. https://doi.org/10.1021/acsnano.8b01399
Xu, Ruijuan, Gao, Ran, Reyes-Lillo, Sebastian E., Saremi, Sahar, Dong, Yongqi, Lu, Hongling, Chen, Zuhuang, Lu, Xiaoyan, Qi, Yajun, Hsu, Shang-Lin, Damodaran, Anoop R., Zhou, Hua, Neaton, Jeffrey B., and Martin, Lane W. Wed . "Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control". United States. https://doi.org/10.1021/acsnano.8b01399. https://www.osti.gov/servlets/purl/1466327.
@article{osti_1466327,
title = {Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control},
author = {Xu, Ruijuan and Gao, Ran and Reyes-Lillo, Sebastian E. and Saremi, Sahar and Dong, Yongqi and Lu, Hongling and Chen, Zuhuang and Lu, Xiaoyan and Qi, Yajun and Hsu, Shang-Lin and Damodaran, Anoop R. and Zhou, Hua and Neaton, Jeffrey B. and Martin, Lane W.},
abstractNote = {The desire for low-power/voltage operation of devices is driving renewed interest in understanding scaling effects in ferroelectric thin films. As the dimensions of ferroelectrics are reduced, the properties can vary dramatically, including the robust scaling relationship between coercive field (Ec) and thickness (d), also referred to as the Janovec-Kay-Dunn (JKD) law, wherein Ec ∝ d-2/3. Here, we report that whereas (001)-oriented heterostructures follow JKD scaling across the thicknesses range of 20-330 nm, (111)-oriented heterostructures of the canonical tetragonal ferroelectric PbZr0.2Ti0.8O3 exhibit a deviation from JKD scaling wherein a smaller scaling exponent for the evolution of Ec is observed in films of thickness ≤ 165 nm. X-ray diffraction reveals that whereas (001)-oriented heterostructures remain tetragonal for all thicknesses, (111)-oriented heterostructures exhibit a transition from tetragonal-to-monoclinic symmetry in films of thickness ≤ 165 nm as a result of the compressive strain. First-principles calculations suggest that this symmetry change contributes to the deviation from the expected scaling, as the monoclinic phase has a lower energy barrier for switching. This structural evolution also gives rise to changes in the c/a lattice parameter ratio, wherein this ratio increases and decreases in (001)- and (111)-oriented heterostructures, respectively, as the films are made thinner. In (111)-oriented heterostructures, this reduced tetragonality drives a reduction of the remanent polarization and, therefore, a reduction of the domain-wall energy and overall energy barrier to switching, which further exacerbates the deviation from the expected scaling. Altogether, this work demonstrates a route toward reducing coercive fields in ferroelectric thin films and provides a possible mechanism to understand the deviation from JKD scaling.},
doi = {10.1021/acsnano.8b01399},
journal = {ACS Nano},
number = 5,
volume = 12,
place = {United States},
year = {Wed Apr 11 00:00:00 EDT 2018},
month = {Wed Apr 11 00:00:00 EDT 2018}
}

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Works referenced in this record:

Ferroelectric thin films: Review of materials, properties, and applications
journal, September 2006

  • Setter, N.; Damjanovic, D.; Eng, L.
  • Journal of Applied Physics, Vol. 100, Issue 5
  • DOI: 10.1063/1.2336999

Applications of Modern Ferroelectrics
journal, February 2007


Complementary ferroelectric-capacitor logic for low-power logic-in-memory VLSI
journal, June 2004

  • Kimura, H.; Hanyu, T.; Kameyama, M.
  • IEEE Journal of Solid-State Circuits, Vol. 39, Issue 6
  • DOI: 10.1109/JSSC.2004.827802

A diode for ferroelectric domain-wall motion
journal, June 2015

  • Whyte, J. R.; Gregg, J. M.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8361

Ferroelectric thin film technology for semiconductor memory
journal, April 1995


Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories
journal, December 2008

  • Hu, Zhijun; Tian, Mingwen; Nysten, Bernard
  • Nature Materials, Vol. 8, Issue 1
  • DOI: 10.1038/nmat2339

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations
journal, July 2016

  • Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan
  • Journal of the American Ceramic Society, Vol. 99, Issue 8
  • DOI: 10.1111/jace.14387

Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures
journal, September 2006

  • Nagarajan, V.; Junquera, J.; He, J. Q.
  • Journal of Applied Physics, Vol. 100, Issue 5
  • DOI: 10.1063/1.2337363

Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films
journal, March 2013

  • Huang, C. W.; Chen, Z. H.; Chen, Lang
  • Journal of Applied Physics, Vol. 113, Issue 9
  • DOI: 10.1063/1.4794005

Suppressed Dependence of Polarization on Epitaxial Strain in Highly Polar Ferroelectrics
journal, May 2007


Ferroelectricity in Ultrathin Perovskite Films
journal, June 2004

  • Fong, Dillon D.; Stephenson, G. Brian; Streiffer, Stephen K.
  • Science, Vol. 304, Issue 5677, p. 1650-1653
  • DOI: 10.1126/science.1098252

Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films
journal, October 2003

  • Pertsev, N. A.; Rodrı́guez Contreras, J.; Kukhar, V. G.
  • Applied Physics Letters, Vol. 83, Issue 16
  • DOI: 10.1063/1.1621731

Mechanism of Fatigue in Ferroelectric Thin Films
journal, October 1992


Identification of passive layer in ferroelectric thin films from their switching parameters
journal, August 1995

  • Tagantsev, A. K.; Landivar, M.; Colla, E.
  • Journal of Applied Physics, Vol. 78, Issue 4
  • DOI: 10.1063/1.360122

Ferroelectric properties and fatigue of PbZr 0.51 Ti 0.49 O 3 thin films of varying thickness: Blocking layer model
journal, August 1994

  • Larsen, P. K.; Dormans, G. J. M.; Taylor, D. J.
  • Journal of Applied Physics, Vol. 76, Issue 4
  • DOI: 10.1063/1.357589

Advanced synthesis techniques and routes to new single-phase multiferroics
journal, October 2012

  • Martin, Lane W.; Schlom, Darrell G.
  • Current Opinion in Solid State and Materials Science, Vol. 16, Issue 5
  • DOI: 10.1016/j.cossms.2012.03.001

Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films
journal, May 2010

  • Martin, L. W.; Chu, Y. -H.; Ramesh, R.
  • Materials Science and Engineering: R: Reports, Vol. 68, Issue 4-6
  • DOI: 10.1016/j.mser.2010.03.001

On the theory of the coercive field of single-domain crystals of BaTiO3
journal, January 1958

  • Janovec, Václav
  • Czechoslovak Journal of Physics, Vol. 8, Issue 1
  • DOI: 10.1007/BF01688741

Thickness dependence of the nucleation field of triglycine sulphate
journal, December 1962


Scaling of the Coercive Field with Thickness in Thin-Film Ferroelectrics
journal, January 2004


Two-dimensional ferroelectric films
journal, February 1998

  • Bune, A. V.; Fridkin, V. M.; Ducharme, Stephen
  • Nature, Vol. 391, Issue 6670, p. 874-877
  • DOI: 10.1038/36069

Intrinsic Ferroelectric Coercive Field
journal, January 2000


Coercive fields in ultrathin BaTiO3 capacitors
journal, December 2006

  • Jo, J. Y.; Kim, Y. S.; Noh, T. W.
  • Applied Physics Letters, Vol. 89, Issue 23
  • DOI: 10.1063/1.2402238

Depolarization corrections to the coercive field in thin-film ferroelectrics
journal, June 2003


Stationary domain wall contribution to enhanced ferroelectric susceptibility
journal, January 2014

  • Xu, Ruijuan; Karthik, J.; Damodaran, Anoop R.
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms4120

Ferroelectric polarization reversal via successive ferroelastic transitions
journal, October 2014

  • Xu, Ruijuan; Liu, Shi; Grinberg, Ilya
  • Nature Materials, Vol. 14, Issue 1
  • DOI: 10.1038/nmat4119

Thickness dependence of polarization in ferroelectric perovskite thin films
journal, February 2005


Intrinsic ferroelectric switching from first principles
journal, June 2016

  • Liu, Shi; Grinberg, Ilya; Rappe, Andrew M.
  • Nature, Vol. 534, Issue 7607
  • DOI: 10.1038/nature18286

Self-interaction correction to density-functional approximations for many-electron systems
journal, May 1981


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films
journal, March 1998


First-principles study of epitaxial strain in perovskites
journal, October 2005


Strain-induced diffuse dielectric anomaly and critical point in perovskite ferroelectric thin films
journal, December 2001


Computational study of (111) epitaxially strained ferroelectric perovskites BaTiO 3 and PbTiO 3
journal, September 2008


Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Theory of polarization of crystalline solids
journal, January 1993


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Obvious ferroelectricity in undoped HfO 2 films by chemical solution deposition
journal, January 2020

  • Chen, Haiyan; Chen, Yonghong; Tang, Lin
  • Journal of Materials Chemistry C, Vol. 8, Issue 8
  • DOI: 10.1039/c9tc06400a

Progress, Outlook, and Challenges in Lead‐Free Energy‐Storage Ferroelectrics
journal, December 2019

  • Sun, Zixiong; Wang, Zhuo; Tian, Ye
  • Advanced Electronic Materials, Vol. 6, Issue 1
  • DOI: 10.1002/aelm.201900698