Large-area and bright pulsed electroluminescence in monolayer semiconductors
Abstract
Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. Here, we demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.
- Authors:
-
[1];
[1];
[1];
[1];
[2];
[3];
[4];
[2];
[1]
- Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences
- King Abdullah Univ. of Science & Technology (KAUST), Thuwal (Saudi Arabia). Computer, Electrical and Mathematical Sciences and Engineering Division
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
- OSTI Identifier:
- 1465474
- Grant/Contract Number:
- AC02-05CH11231; 1623038
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Related Information: © 2018 The Author(s).; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 42 ENGINEERING
Citation Formats
Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., and Javey, Ali. Large-area and bright pulsed electroluminescence in monolayer semiconductors. United States: N. p., 2018.
Web. doi:10.1038/s41467-018-03218-8.
Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., & Javey, Ali. Large-area and bright pulsed electroluminescence in monolayer semiconductors. United States. https://doi.org/10.1038/s41467-018-03218-8
Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., and Javey, Ali. Mon .
"Large-area and bright pulsed electroluminescence in monolayer semiconductors". United States. https://doi.org/10.1038/s41467-018-03218-8. https://www.osti.gov/servlets/purl/1465474.
@article{osti_1465474,
title = {Large-area and bright pulsed electroluminescence in monolayer semiconductors},
author = {Lien, Der-Hsien and Amani, Matin and Desai, Sujay B. and Ahn, Geun Ho and Han, Kevin and He, Jr-Hau and Ager, Joel W. and Wu, Ming C. and Javey, Ali},
abstractNote = {Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. Here, we demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.},
doi = {10.1038/s41467-018-03218-8},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Mon Mar 26 00:00:00 EDT 2018},
month = {Mon Mar 26 00:00:00 EDT 2018}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 124 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
A universal etching-free transfer of MoS2 films for applications in photodetectors
journal, October 2015
- Ma, Donglin; Shi, Jianping; Ji, Qingqing
- Nano Research, Vol. 8, Issue 11
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
journal, April 2015
- Kang, Kibum; Xie, Saien; Huang, Lujie
- Nature, Vol. 520, Issue 7549
MoS2 transistors with 1-nanometer gate lengths
journal, October 2016
- Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.
- Science, Vol. 354, Issue 6308
A universal etching-free transfer of MoS2 films for applications in photodetectors
journal, October 2015
- Ma, Donglin; Shi, Jianping; Ji, Qingqing
- Nano Research, Vol. 8, Issue 11
WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
text, January 2015
- Withers, F.; Del Pozo-Zamudio, O.; Schwarz, S.
- arXiv
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
journal, April 2014
- Fang, H.; Battaglia, C.; Carraro, C.
- Proceedings of the National Academy of Sciences, Vol. 111, Issue 17
Two-Dimensional Material Nanophotonics
text, January 2018
- Xia, Fengnian; Wang, Han; Xiao, Di
- Figshare
WSe 2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
journal, November 2015
- Withers, F.; Del Pozo-Zamudio, O.; Schwarz, S.
- Nano Letters, Vol. 15, Issue 12
Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
text, January 2014
- Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A.
- arXiv
Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
journal, March 2016
- Amani, Matin; Taheri, Peyman; Addou, Rafik
- Nano Letters, Vol. 16, Issue 4
MoS2 transistors with 1-nanometer gate lengths
journal, October 2016
- Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.
- Science, Vol. 354, Issue 6308
Two-Dimensional Material Nanophotonics
text, January 2014
- Xia, Fengnian; Wang, Han; Xiao, Di
- Carnegie Mellon University
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
journal, May 1993
- Nakamura, Shuji; Senoh, Masayuki; Mukai, Takashi
- Applied Physics Letters, Vol. 62, Issue 19
Solar-energy conversion and light emission in an atomic monolayer p-n diode
text, January 2013
- Pospischil, Andreas; Furchi, Marco M.; Mueller, Thomas
- arXiv
Probing the Ultimate Limits of Plasmonic Enhancement
journal, August 2012
- Ciraci, C.; Hill, R. T.; Mock, J. J.
- Science, Vol. 337, Issue 6098
High Performance AC Electroluminescence from Colloidal Quantum Dot Hybrids
journal, July 2012
- Cho, Sung Hwan; Sung, Jinwoo; Hwang, Ihn
- Advanced Materials, Vol. 24, Issue 33
Atomically Thin A New Direct-Gap Semiconductor
journal, September 2010
- Mak, Kin Fai; Lee, Changgu; Hone, James
- Physical Review Letters, Vol. 105, Issue 13, Article No.136805
Monolayer semiconductor nanocavity lasers with ultralow thresholds
journal, March 2015
- Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.
- Nature, Vol. 520, Issue 7545
Solar-energy conversion and light emission in an atomic monolayer p-n diode
text, January 2013
- Pospischil, Andreas; Furchi, Marco M.; Mueller, Thomas
- arXiv
Probing the Ultimate Limits of Plasmonic Enhancement
journal, August 2012
- Ciraci, C.; Hill, R. T.; Mock, J. J.
- Science, Vol. 337, Issue 6098
Near-unity photoluminescence quantum yield in MoS2
journal, November 2015
- Amani, M.; Lien, D. -H.; Kiriya, D.
- Science, Vol. 350, Issue 6264
Solar-energy conversion and light emission in an atomic monolayer p–n diode
journal, March 2014
- Pospischil, Andreas; Furchi, Marco M.; Mueller, Thomas
- Nature Nanotechnology, Vol. 9, Issue 4
Electroluminescence from Nanoscale Materials via Field-Driven Ionization
journal, July 2011
- Wood, Vanessa; Panzer, Matthew J.; Bozyigit, Deniz
- Nano Letters, Vol. 11, Issue 7
Light-emitting diodes by band-structure engineering in van der Waals heterostructures
journal, February 2015
- Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A.
- Nature Materials, Vol. 14, Issue 3
Two-dimensional material nanophotonics
journal, November 2014
- Xia, Fengnian; Wang, Han; Xiao, Di
- Nature Photonics, Vol. 8, Issue 12
Engineering Light Outcoupling in 2D Materials
journal, January 2015
- Lien, Der-Hsien; Kang, Jeong Seuk; Amani, Matin
- Nano Letters, Vol. 15, Issue 2
Optical antenna enhanced spontaneous emission
journal, January 2015
- Eggleston, Michael S.; Messer, Kevin; Zhang, Liming
- Proceedings of the National Academy of Sciences, Vol. 112, Issue 6
Inhibited and Enhanced Spontaneous Emission from Optically Thin AlGaAs/GaAs Double Heterostructures
journal, November 1988
- Yablonovitch, E.; Gmitter, T. J.; Bhat, R.
- Physical Review Letters, Vol. 61, Issue 22
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
journal, January 2013
- Tonndorf, Philipp; Schmidt, Robert; Böttger, Philipp
- Optics Express, Vol. 21, Issue 4
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
journal, March 2014
- Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
- Nature Nanotechnology, Vol. 9, Issue 4
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
journal, October 2014
- Wu, Wenzhuo; Wang, Lei; Li, Yilei
- Nature, Vol. 514, Issue 7523
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
journal, March 2014
- Ross, Jason S.; Klement, Philip; Jones, Aaron M.
- Nature Nanotechnology, Vol. 9, Issue 4
Near-unity photoluminescence quantum yield in MoS2
journal, November 2015
- Amani, M.; Lien, D. -H.; Kiriya, D.
- Science, Vol. 350, Issue 6264
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
journal, October 2014
- Wu, Wenzhuo; Wang, Lei; Li, Yilei
- Nature, Vol. 514, Issue 7523
Electroluminescence from Nanoscale Materials via Field-Driven Ionization
journal, July 2011
- Wood, Vanessa; Panzer, Matthew J.; Bozyigit, Deniz
- Nano Letters, Vol. 11, Issue 7
Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
journal, March 2014
- Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang
- Nature Nanotechnology, Vol. 9, Issue 4
Engineering Light Outcoupling in 2D Materials
journal, January 2015
- Lien, Der-Hsien; Kang, Jeong Seuk; Amani, Matin
- Nano Letters, Vol. 15, Issue 2
High‐power InGaN/GaN double‐heterostructure violet light emitting diodes
journal, May 1993
- Nakamura, Shuji; Senoh, Masayuki; Mukai, Takashi
- Applied Physics Letters, Vol. 62, Issue 19
Optical antenna enhanced spontaneous emission
journal, January 2015
- Eggleston, Michael S.; Messer, Kevin; Zhang, Liming
- Proceedings of the National Academy of Sciences, Vol. 112, Issue 6
Electrically Switchable Chiral Light-Emitting Transistor
journal, April 2014
- Zhang, Y. J.; Oka, T.; Suzuki, R.
- Science, Vol. 344, Issue 6185
Achieving High Performance in AC-Field Driven Organic Light Sources
journal, April 2016
- Xu, Junwei; Carroll, David L.; Smith, Gregory M.
- Scientific Reports, Vol. 6, Issue 1
Electrically Switchable Chiral Light-Emitting Transistor
journal, April 2014
- Zhang, Y. J.; Oka, T.; Suzuki, R.
- Science, Vol. 344, Issue 6185
High Performance AC Electroluminescence from Colloidal Quantum Dot Hybrids
journal, July 2012
- Cho, Sung Hwan; Sung, Jinwoo; Hwang, Ihn
- Advanced Materials, Vol. 24, Issue 33
Achieving High Performance in AC-Field Driven Organic Light Sources
journal, April 2016
- Xu, Junwei; Carroll, David L.; Smith, Gregory M.
- Scientific Reports, Vol. 6, Issue 1
Recombination Kinetics and Effects of Superacid Treatment in Sulfur- and Selenium-Based Transition Metal Dichalcogenides
journal, March 2016
- Amani, Matin; Taheri, Peyman; Addou, Rafik
- Nano Letters, Vol. 16, Issue 4
The electroluminescent lamp: A new light source
journal, June 1954
- Butler, K. H.; Jerome, C. W.; Waymouth, J. F.
- Electrical Engineering, Vol. 73, Issue 6
WSe 2 Light-Emitting Tunneling Transistors with Enhanced Brightness at Room Temperature
journal, November 2015
- Withers, F.; Del Pozo-Zamudio, O.; Schwarz, S.
- Nano Letters, Vol. 15, Issue 12
Two-Dimensional Material Nanophotonics
text, January 2018
- Xia, Fengnian; Wang, Han; Xiao, Di
- Figshare
Strain-engineered growth of two-dimensional materials
journal, September 2017
- Ahn, Geun Ho; Amani, Matin; Rasool, Haider
- Nature Communications, Vol. 8, Issue 1
Single-layer MoS2 transistors
journal, January 2011
- Radisavljevic, B.; Radenovic, A.; Brivio, J.
- Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
Monolayer semiconductor nanocavity lasers with ultralow thresholds
journal, March 2015
- Wu, Sanfeng; Buckley, Sonia; Schaibley, John R.
- Nature, Vol. 520, Issue 7545
Torsional Periodic Lattice Distortions and Diffraction of Twisted 2D Materials
text, January 2022
- Sung, Suk Hyun; Goh, Yin Min; Yoo, Hyobin
- arXiv
Extraordinary Room-Temperature Photoluminescence in Triangular WS 2 Monolayers
journal, December 2012
- Gutiérrez, Humberto R.; Perea-López, Nestor; Elías, Ana Laura
- Nano Letters, Vol. 13, Issue 8
Works referencing / citing this record:
Recent Advances in Flexible Inorganic Light Emitting Diodes: From Materials Design to Integrated Optoelectronic Platforms
journal, September 2018
- Zhang, Hao; Rogers, John A.
- Advanced Optical Materials, Vol. 7, Issue 2
Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors
journal, January 2019
- Kaviraj, Bhaskar; Sahoo, Dhirendra
- RSC Advances, Vol. 9, Issue 44
Centimeter‐Scale and Visible Wavelength Monolayer Light‐Emitting Devices
journal, December 2019
- Cho, Joy; Amani, Matin; Lien, Der‐Hsien
- Advanced Functional Materials, Vol. 30, Issue 6
Synthetic WSe 2 monolayers with high photoluminescence quantum yield
journal, January 2019
- Kim, Hyungjin; Ahn, Geun Ho; Cho, Joy
- Science Advances, Vol. 5, Issue 1
Rapid-throughput solution-based production of wafer-scale 2D MoS 2
journal, April 2019
- Robertson, John; Blomdahl, Daniel; Islam, Kazi
- Applied Physics Letters, Vol. 114, Issue 16
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
text, January 2018
- Paur, Matthias; Molina-Mendoza, Aday J.; Bratschitsch, Rudolf
- arXiv
Electroluminescent Devices Based on 2D Semiconducting Transition Metal Dichalcogenides
journal, August 2018
- Wang, Junyong; Verzhbitskiy, Ivan; Eda, Goki
- Advanced Materials, Vol. 30, Issue 47
Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide
journal, April 2019
- Ge, Xiaochen; Minkov, Momchil; Fan, Shanhui
- npj 2D Materials and Applications, Vol. 3, Issue 1
2D optical materials and the implications for photonics
journal, August 2019
- Jia, Baohua
- APL Photonics, Vol. 4, Issue 8
Optoelectronic and photonic devices based on transition metal dichalcogenides
journal, January 2020
- Thakar, Kartikey; Lodha, Saurabh
- Materials Research Express, Vol. 7, Issue 1
Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C
journal, December 2019
- Hettick, Mark; Li, Hao; Lien, Der-Hsien
- Proceedings of the National Academy of Sciences, Vol. 117, Issue 2
Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe 2 on Inert Amorphous Dielectrics
journal, June 2019
- He, Qingyuan; Li, Pengji; Wu, Zhiheng
- Advanced Materials
WS 2 monolayer-based light-emitting devices in a vertical p–n architecture
journal, January 2019
- Andrzejewski, Dominik; Hopmann, Eric; John, Michèle
- Nanoscale, Vol. 11, Issue 17
Narrow photoluminescence and Raman peaks of epitaxial MoS 2 on graphene/Ir(1 1 1)
journal, November 2018
- Ehlen, Niels; Hall, Joshua; Senkovskiy, Boris V.
- 2D Materials, Vol. 6, Issue 1
Strong optical response and light emission from a monolayer molecular crystal
journal, December 2019
- Zhao, Huijuan; Zhao, Yingbo; Song, Yinxuan
- Nature Communications, Vol. 10, Issue 1
Strong optical response and light emission from a monolayer molecular crystal
journal, December 2019
- Zhao, Huijuan; Zhao, Yingbo; Song, Yinxuan
- Nature Communications, Vol. 10, Issue 1
Shape-controlled single-crystal growth of InP at low temperatures down to 220 °C
journal, December 2019
- Hettick, Mark; Li, Hao; Lien, Der-Hsien
- Proceedings of the National Academy of Sciences, Vol. 117, Issue 2
Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination
journal, September 2019
- Zhao, Peida; Wang, Ruixuan; Lien, Der‐Hsien
- Advanced Materials, Vol. 31, Issue 48
Nonlinear optical effects in a three-nanolayer metal sandwich assembly
journal, April 2018
- Khmelinskii, Igor; Makarov, Vladimir I.
- Journal of Applied Physics, Vol. 123, Issue 16
Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
journal, September 2018
- Mueller, Thomas; Malic, Ermin
- npj 2D Materials and Applications, Vol. 2, Issue 1
Advances in Alternating Current Electroluminescent Devices
journal, January 2019
- Wang, Lin; Xiao, Lian; Gu, Haoshuang
- Advanced Optical Materials, Vol. 7, Issue 7
Reversible crystalline-to-amorphous phase transformation in monolayer MoS 2 under grazing ion irradiation
journal, January 2020
- Valerius, Philipp; Kretschmer, Silvan; Senkovskiy, Boris V.
- 2D Materials, Vol. 7, Issue 2
Electroluminescence from multi-particle exciton complexes in transition metal dichalcogenide semiconductors
journal, April 2019
- Paur, Matthias; Molina-Mendoza, Aday J.; Bratschitsch, Rudolf
- Nature Communications, Vol. 10, Issue 1
Bright electroluminescence in ambient conditions from WSe 2 p-n diodes using pulsed injection
journal, July 2019
- Han, Kevin; Ahn, Geun Ho; Cho, Joy
- Applied Physics Letters, Vol. 115, Issue 1