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Title: Electrochemically Triggered Metal-Insulator Transition between VO2 and V2O5

Abstract

Abstract Distinct properties of multiple phases of vanadium oxide (VO x ) render this material family attractive for advanced electronic devices, catalysis, and energy storage. In this work, phase boundaries of VO x are crossed and distinct electronic properties are obtained by electrochemically tuning the oxygen content of VO x thin films under a wide range of temperatures. Reversible phase transitions between two adjacent VO x phases, VO 2 and V 2 O 5 , are obtained. Cathodic biases trigger the phase transition from V 2 O 5 to VO 2 , accompanied by disappearance of the wide band gap. The transformed phase is stable upon removal of the bias while reversible upon reversal of the electrochemical bias. The kinetics of the phase transition is monitored by tracking the time‐dependent response of the X‐ray absorption peaks upon the application of a sinusoidal electrical bias. The electrochemically controllable phase transition between VO 2 and V 2 O 5 demonstrates the ability to induce major changes in the electronic properties of VO x by spanning multiple structural phases. This concept is transferable to other multiphase oxides for electronic, magnetic, or electrochemical applications.

Authors:
ORCiD logo [1];  [1];  [2];  [2];  [3];  [4];  [2];  [5]
+ Show Author Affiliations
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Lab. for Electrochemical Interfaces; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Lab. for Electrochemical Interfaces; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences, and Biosciences Division; National Science Foundation (NSF)
OSTI Identifier:
1461946
Alternate Identifier(s):
OSTI ID: 1457196
Grant/Contract Number:  
AC05-00OR22725; AC02-05CH11231; DMR‐1419807; DE‐AC02‐05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 0; Journal Issue: 0; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ambient‐pressure X‐ray photoelectron spectroscopy; phase transitions; vanadium oxides

Citation Formats

Lu, Qiyang, Bishop, Sean R., Lee, Dongkyu, Lee, Shinbuhm, Bluhm, Hendrik, Tuller, Harry L., Lee, Ho Nyung, and Yildiz, Bilge. Electrochemically Triggered Metal-Insulator Transition between VO2 and V2O5. United States: N. p., 2018. Web. doi:10.1002/adfm.201803024.
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Lu, Qiyang, Bishop, Sean R., Lee, Dongkyu, Lee, Shinbuhm, Bluhm, Hendrik, Tuller, Harry L., Lee, Ho Nyung, & Yildiz, Bilge. Electrochemically Triggered Metal-Insulator Transition between VO2 and V2O5. United States. https://doi.org/10.1002/adfm.201803024
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Lu, Qiyang, Bishop, Sean R., Lee, Dongkyu, Lee, Shinbuhm, Bluhm, Hendrik, Tuller, Harry L., Lee, Ho Nyung, and Yildiz, Bilge. Mon . "Electrochemically Triggered Metal-Insulator Transition between VO2 and V2O5". United States. https://doi.org/10.1002/adfm.201803024. https://www.osti.gov/servlets/purl/1461946.
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@article{osti_1461946,
title = {Electrochemically Triggered Metal-Insulator Transition between VO2 and V2O5},
author = {Lu, Qiyang and Bishop, Sean R. and Lee, Dongkyu and Lee, Shinbuhm and Bluhm, Hendrik and Tuller, Harry L. and Lee, Ho Nyung and Yildiz, Bilge},
abstractNote = {Abstract Distinct properties of multiple phases of vanadium oxide (VO x ) render this material family attractive for advanced electronic devices, catalysis, and energy storage. In this work, phase boundaries of VO x are crossed and distinct electronic properties are obtained by electrochemically tuning the oxygen content of VO x thin films under a wide range of temperatures. Reversible phase transitions between two adjacent VO x phases, VO 2 and V 2 O 5 , are obtained. Cathodic biases trigger the phase transition from V 2 O 5 to VO 2 , accompanied by disappearance of the wide band gap. The transformed phase is stable upon removal of the bias while reversible upon reversal of the electrochemical bias. The kinetics of the phase transition is monitored by tracking the time‐dependent response of the X‐ray absorption peaks upon the application of a sinusoidal electrical bias. The electrochemically controllable phase transition between VO 2 and V 2 O 5 demonstrates the ability to induce major changes in the electronic properties of VO x by spanning multiple structural phases. This concept is transferable to other multiphase oxides for electronic, magnetic, or electrochemical applications.},
doi = {10.1002/adfm.201803024},
journal = {Advanced Functional Materials},
number = 0,
volume = 0,
place = {United States},
year = {Mon Jun 25 00:00:00 EDT 2018},
month = {Mon Jun 25 00:00:00 EDT 2018}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/adfm.201803024
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Cited by: 42 works
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Figures / Tables:

Figure 1 Figure 1: (a) Schematic illustration of the Ambient Pressure X-ray Absorption Spectroscopy and X-ray Photoelectron Spectroscopy (AP-XAS, AP-XPS) measurements. Electrical bias was applied onto the VOx electrode while the absorption and photoelectron spectra were measured in operando. Electrochemical pumping of oxygen out of the film transforms it from V2O5 tomore » VO2, and electrochemical pumping of oxygen into the film transforms VO2 to V2O5. (b) AP-XAS data as a function of electrical bias applied to the VOx/YSZ/Pt electrochemical cell at T = 300 °C, pO2 = 200 mTorr. The dashed lines are guides to the eyes that mark changes in the spectral lines in the V L2,3-edge and O K-edge designated peaks. The black and red dashed lines mark the V2O5 and VO2 features, respectively. A cathodic bias of -0.25 V triggers the V2O5 → VO2 transition under these conditions.« less
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    Works referencing / citing this record:

    Nonstoichiometric Oxygen‐Dependent Microstructures and Phase Transitions in Post‐Annealed Vanadium Dioxides
    journal, April 2019

    • Wang, Shuxia; Wei, Wei; Huang, Tiantian
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    Degradation Mechanism of Vanadium Oxide Films When Grown on Y‐Stabilized ZrO 2 Above 500 °C
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    Al‐Doping‐Induced VO 2 (B) Phase in VO 2 (M) Toward Smart Optical Thin Films with Modulated Δ T vis and Δ T c
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      Figure 5 (p. 15)figure
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      Figure S2 (p. 25)figure
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