Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits

Lalumondiere, Stephen D.; Dillingham, Erik C.; Scofield, Adam C.; Bonsall, Jeremy P.; Karuza, Petras; Brewe, Dale L.; Schrimpf, Ronald D.; Sternberg, Andrew L.; Wells, Nathan P.; Cardoza, David M.; Lotshaw, William T.; Moss, Steven C.

doi:10.1109/tns.2017.2780827

Title: Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits

Full Record
Other Related Research

Abstract

Here, we demonstrate the utility of focused, pulsed X-rays for investigating localized total ionizing dose effects in bipolar analog integrated circuits. Using the LM139 comparator as a test vehicle, we show how the technique can be used to identify the sources of degradation as a result of irradiating different transistors of the device and how this impacts the input bias current, input offset voltage, and output voltage. The 2-D mapping of the sensitive regions of transistors is presented, where the results of localized irradiation impact the monitored operational parameters.

Authors:

^[1]; Dillingham, Erik C. ^[1]; Scofield, Adam C. ^[1];

^[1]; Karuza, Petras ^[1];

^[2];

^[3];

^[3]; Wells, Nathan P. ^[1]; Cardoza, David M. ^[1]; Lotshaw, William T. ^[1]; Moss, Steven C. ^[1]

The Aerospace Corp., Los Angeles, CA (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Vanderbilt Univ., Nashville, TN (United States)

Publication Date:: Thu Dec 07 00:00:00 EST 2017

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1460728

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 65; Journal Issue: 1; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 73 NUCLEAR PHYSICS AND RADIATION PHYSICS; analog integrated circuits; bipolar integrated circuits; radiation effects; synchrotron radiation; total ionizing dose; x-rays

Citation Formats


                    Lalumondiere, Stephen D., Dillingham, Erik C., Scofield, Adam C., Bonsall, Jeremy P., Karuza, Petras, Brewe, Dale L., Schrimpf, Ronald D., Sternberg, Andrew L., Wells, Nathan P., Cardoza, David M., Lotshaw, William T., and Moss, Steven C. Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits.  United States: N. p., 2017. 
Web.  doi:10.1109/tns.2017.2780827.

Copy to clipboard


                    Lalumondiere, Stephen D., Dillingham, Erik C., Scofield, Adam C., Bonsall, Jeremy P., Karuza, Petras, Brewe, Dale L., Schrimpf, Ronald D., Sternberg, Andrew L., Wells, Nathan P., Cardoza, David M., Lotshaw, William T., & Moss, Steven C. Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits.  United States.  https://doi.org/10.1109/tns.2017.2780827

Copy to clipboard


                    Lalumondiere, Stephen D., Dillingham, Erik C., Scofield, Adam C., Bonsall, Jeremy P., Karuza, Petras, Brewe, Dale L., Schrimpf, Ronald D., Sternberg, Andrew L., Wells, Nathan P., Cardoza, David M., Lotshaw, William T., and Moss, Steven C. Thu .  
"Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits".  United States.  https://doi.org/10.1109/tns.2017.2780827.  https://www.osti.gov/servlets/purl/1460728.

Copy to clipboard


                    
@article{osti_1460728,

  title        = {Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits},

  author       = {Lalumondiere, Stephen D. and Dillingham, Erik C. and Scofield, Adam C. and Bonsall, Jeremy P. and Karuza, Petras and Brewe, Dale L. and Schrimpf, Ronald D. and Sternberg, Andrew L. and Wells, Nathan P. and Cardoza, David M. and Lotshaw, William T. and Moss, Steven C.},

  abstractNote = {Here, we demonstrate the utility of focused, pulsed X-rays for investigating localized total ionizing dose effects in bipolar analog integrated circuits. Using the LM139 comparator as a test vehicle, we show how the technique can be used to identify the sources of degradation as a result of irradiating different transistors of the device and how this impacts the input bias current, input offset voltage, and output voltage. The 2-D mapping of the sensitive regions of transistors is presented, where the results of localized irradiation impact the monitored operational parameters.},

  doi          = {10.1109/tns.2017.2780827},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 1,

  volume       = 65,

  place        = {United States},

  year         = {Thu Dec 07 00:00:00 EST 2017},

  month        = {Thu Dec 07 00:00:00 EST 2017}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1109/tns.2017.2780827

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Total dose effects in conventional bipolar transistors and linear integrated circuits

Conference Johnston, A H ; Swift, G M ; Rax, B G - IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

Total dose damage is investigated for discrete bipolar transistors and linear integrated circuits that are fabricated with older processing technologies, but are frequently used in space applications. The Kirk effect limits the current density of discrete transistors with high collector breakdown voltage, increasing their sensitivity to ionizing radiation because they must operate low injection levels. Bias conditions during irradiation had different effects on discrete and integrated circuit transistors: discrete devices were strongly dependence on bias conditions, whereas damage in the linear ICs was nearly the same with or without bias. There were also large differences in the response of thesemore »« less
Models for total dose degradation of linear integrated circuits

Conference Johnston, A H ; Plaag, R E - IEEE Trans. Nucl. Sci.; (United States)

Mechanisms for total dose degradation of linear circuits are discussed, including bulk effects, oxide charge buildup and recombination at the Si-SiO/sub 2/ interface. The dependence of damage on bias, dose, particle type and energy is used in conjunction with two-dimensional modeling to identify the failure mechanism in a specific linear device type. The importance of surface recombination is demonstrated along with the absence of bias dependence. Bulk damage is shown to be important for high energy electron irradiation because of wide-base pnp transistors. This causes substantial differences in device failure between electron and cobalt-60 environments that need to be takenmore »« less
Identification of degradation mechanisms in a bipolar linear voltage comparator through correlations of transistor and circuit response

Journal Article Barnaby, H J ; Schrimpf, R D ; Pease, R L - IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

The input bias current (I{sub IB}) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiO{sub 2}), increased I{sub IB} is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 krad(SiO{sub 2}), I{sub IB} shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the inputmore »« less
https://doi.org/10.1109/23.819136
Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)

Journal Article Pease, R L ; Gehlhausen, M ; Krieg, J ; ... - IEEE Transactions on Nuclear Science

Data are presented on several low dose rate sensitive bipolar linear circuits to evaluate a proposed hardness assurance method. The circuits include primarily operational amplifiers and voltage comparators with a variety of sensitive components and failure modes. The proposed method, presented in 1997, includes an option between a low dose rate test at 10 mrd(Si)/s and room temperature and a 100 C elevated temperature irradiation test at a moderate dose rate. The results of this evaluation demonstrate that a 10 mrd(Si)/s test is able (in all but one case) to bound the worst case response within a factor of 2.more »« less
https://doi.org/10.1109/23.736512
First observations of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MPTB experiment

Journal Article Titus, J L ; Combs, W E ; Turflinger, T L ; ... - IEEE Transactions on Nuclear Science

Bipolar devices, most notably circuits fabricated with lateral PNP transistors (LPNP) and substrate PNP transistors (SPNP), have been observed to exhibit an enhanced low dose rate sensitivity when exposed to ionizing radiation. These dose rate sensitive bipolar devices exhibited enhanced degradation of base current in transistors and of input bias current, offset current, and/or offset voltage in linear circuits at dose rates greater than 1 rd(Si)/s. The total dose responses of several bipolar transistors and linear circuits in a space environment are demonstrated to exhibit enhanced degradation comparable, in magnitude, to ground-based data irradiated at a dose rate of 10more »« less
https://doi.org/10.1109/23.736514

Similar Records